Chapter 10 Memory Subsystem.pdf

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2316 Memory Subsystem SPRUGN4L–May 2010–Revised June 2011 Copyright © 2010–2011, Texas Instruments Incorporated
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This chapter describes the memory s
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Device GPMC External device/ memory
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Public Version www.ti.com General-P
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1 GBytes 512 MBytes 256 MBytes 128
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GPMC_FCLK GPMC_CLK gpmc_a[11:1] (co
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GPMC_FCLK GPMC_CLK gpmc_a[11:1] gpm
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GPMC_FCLK GPMC_CLK gpmc_a[11:1] gpm
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nCS nBE0/CLE nWE nADV/ALE CSONTIME=
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nCS nBE0/CLE nWE Public Version www
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Row 0 Row 1 Row 2 Row 3 Row 252 Row
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512 Bytes input Row 0 Row 1 Row 2 R
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M0 Manual mode Rd/Wr/ SW Mode Size0
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M1 M2 M3 M4 Per-sector spares Spare
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M9 Per-sector spares, separate ECC
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GPMC_FCLK nCS nBE0/CLE nOE/nRE nADV
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Device GPMC module A [27:17] A [16:
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FCLK CLK nADV nCS nOE A/D bus ClkAc
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FCLK nCS nADV nWE A/D bus AdvWrOffT
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Public Version www.ti.com SDRAM Con
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Device SDRAM controller subsystem R
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MUX1 System address 31 30 29 28 27
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MUX23 System address Address mappin
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Configuration register file Rotatio
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Level 0 Region 0 Public Version www
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OCP slave interface OCP slave port
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BANKALLOCATION = 0b00 BANKALLOCATIO
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Endianism CSnMUXCFG field SDRC.SDRC
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CLK CMD WRITE DQ DQS CLK CMD DQ DQS
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CLK_IN SIGNAL_IN MODEMAXDELAY Initi
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8 bits 32 bits Y0 U Y1 V P0 P1 16 b
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Start configuration of VRFB context
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Page 175 and 176: Request for transaction on class 1
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Page 183 and 184: 4 GB 0x0000 0000 0x6C00 0000 0x6CFF
Page 219 and 220: Device D2D OCM_ROM OCM_RAM ROM (32K
Page 221: Public Version www.ti.com On-Chip M
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