Bulletin 2012/02 - European Patent Office
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(H01L) I.1(1)<br />

BUTLER, Justin, Santa Barbara, California<br />

93103, US<br />

SANT, Paul Anthony, Santa Barbara, CA<br />

93101, CA<br />

(74) Hoffmann, Benjamin, Dehns St. Bride's<br />

House 10 Salisbury Square, London EC4Y<br />

8JD, GB<br />

H01L 21/268 → (51) B23K 26/14<br />

H01L 21/268 → (51) H01L 31/04<br />

(51) H01L 21/283 (11) 2 404 316 A1*<br />

H01L 29/49<br />

(25) En (26) En<br />

(21) 10770142.7 (22) 22.04.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/031998 22.04.2010<br />

(87) WO 2010/126768 2010/44 04.11.2010<br />

(30) 30.04.2009 US 432927<br />

(54) • SCHWELLENSPANNUNGSEINSTELLUNG<br />

DURCH MODIFIZIERUNG EINES DIELEKT-<br />

RISCHEN BÜNDELGATES<br />

• THRESHOLD VOLTAGE ADJUSTMENT<br />

THROUGH GATE DIELECTRIC STACK<br />

MODIFICATION<br />

• AJUSTEMENT DE TENSION DE SEUIL PAR<br />

MODIFICATION D'UN EMPILEMENT DIÉ-<br />

LECTRIQUE DE GRILLE<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

(72) GREENE, Brian, J., Hopewell Jct. NY 12533,<br />

US<br />

CHUDZIK, Michael, P., Hopewell Jct. NY<br />

12533, US<br />

HAN, Shu-jen, Hopewell Jct. NY 12533, US<br />

HENSON, William, K., Hopewell Jct. NY<br />

12533, US<br />

LIANG, Yue, Hopewell Jct. NY 12533, US<br />

MACIEJEWSKI, Edward, P., Hopewell Jct. NY<br />

12533, US<br />

NA, Myung-hee, Hopewell Jct. NY 12533, US<br />

NOWAK, Edward, J., Hopewell Jct. NY<br />

12533, US<br />

YU, Xiaojun, Hopewell Jct. NY 12533, US<br />

(74) Williams, Julian David, IBM United Kingdom<br />

Ltd Intellectual Property Dept Mail Point 110<br />

Hursley Park, GB-Winchester, Hants SO21<br />

2JN, GB<br />

(51) H01L 21/4763 (11) 2 404 317 A1*<br />

(25) En (26) En<br />

(21) 10749454.4 (22) 08.03.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/<strong>02</strong>6570 08.03.2010<br />

(87) WO 2010/1<strong>02</strong>306 2010/36 10.09.2010<br />

(30) 06.03.2009 US 158223 P<br />

(54) • VERFAHREN ZUR ABLÖSUNG EINES<br />

DÜNNSCHICHTSUBSTRATS<br />

• METHOD FOR RELEASING A THIN-FILM<br />

SUBSTRATE<br />

• PROCÉDÉ DE FABRICATION D'UN SUBS-<br />

TRAT À COUCHE MINCE<br />

(71) Solexel, Inc., 1530 McCarthy Boulevard,<br />

Milpitas, CA 95035-7405, US<br />

(72) RICOLCOL, Rafael, Fremont, CA 94555, US<br />

KRAMER, Joe, San Jose, CA 95125, US<br />

WANG, David, Xuan-Qi, Fremont, CA 94539,<br />

US<br />

MOSLEHI, Mehrdad, M., Los Altos, CA<br />

94<strong>02</strong>4, US<br />

(74) Richardt, Markus Albert, Richardt <strong>Patent</strong>anwälte<br />

Wilhelmstraße 7, DE-65185 Wiesbaden,<br />

DE<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

H01L 21/60 → (51) H01L 33/48<br />

H01L 21/66 → (51) H01L 31/<strong>02</strong>24<br />

(51) H01L 21/762 (11) 2 404 318 A1*<br />

(25) En (26) En<br />

(21) 09841<strong>02</strong>6.9 (22) 09.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) EP 2009/061711 09.09.2009<br />

(87) WO 2010/099837 2010/36 10.09.2010<br />

(30) 06.03.2009 FR 0951433<br />

(54) • VERFAHREN ZUR HERSTELLUNG EINER<br />

HETEROSTRUKTUR MIT DEM ZIEL DES<br />

VERRINGERNS DES ZUGSPANNUNGS-<br />

ZUSTANDS DES DONORSUBSTRATS<br />

• A METHOD FOR MANUFACTURING A<br />

HETEROSTRUCTURE AIMING AT REDU-<br />

CING THE TENSILE STRESS CONDITION<br />

OF THE DONOR SUBSTRATE<br />

• PROCÉDÉ DE FABRICATION D'UNE HÉTÉ-<br />

ROSTRUCTURE VISANT À RÉDUIRE<br />

L'ÉTAT DE CONTRAINTE DE TRACTION DU<br />

SUBSTRAT DONNEUR<br />

(71) S.O.I.Tec Silicon on Insulator Technologies,<br />

Parc Technologique des Fontaines Chemin<br />

des Franques, 38190 Bernin, FR<br />

(72) KENNARD, Mark, F-38920 Crolles, FR<br />

(74) Branger, Jean-Yves, et al, Cabinet Regimbeau<br />

Espace Performance Bâtiment K, 35769<br />

Saint-Gregoire-Cedex, FR<br />

H01L 21/768 → (51) H01L 23/10<br />

(51) H01L 23/10 (11) 2 404 319 A1*<br />

H01L 51/10 H01L 51/44<br />

H01L 51/52 H05B 33/04<br />

(25) En (26) En<br />

(21) 10706866.0 (22) 25.<strong>02</strong>.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/<strong>02</strong>5364 25.<strong>02</strong>.2010<br />

(87) WO 2010/101763 2010/36 10.09.2010<br />

(30) 04.03.2009 US 397418<br />

(54) • HERMETISCHE DICHTUNG FÜR EINE<br />

ELEKTRONISCHE ANORDNUNG, DIE EIN<br />

AKTIVES ORGANISCHES MATERIAL<br />

UMFASST<br />

• HERMETIC SEAL FOR AN ELECTRONIC<br />

DEVICE COMPRISING AN ACTIVE<br />

ORGANIC MATERIAL<br />

• JOINT HERMÉTIQUE POUR DISPOSITIF<br />

ÉLECTRONIQUE COMPRENANT UN<br />

MATÉRIAU ORGANIQUE ACTIF<br />

(71) Global OLED Technology LLC, 13873 Park<br />

Center Road, Suite 330, Herndon, VA 20171,<br />

US<br />

(72) COK, Ronald, S., Rochester NY 14625, US<br />

(74) Wibbelmann, Jobst, Wuesthoff & Wuesthoff<br />

<strong>Patent</strong>- und Rechtsanwälte Schweigerstrasse<br />

2, 81541 München, DE<br />

(51) H01L 23/10 (11) 2 404 320 A2*<br />

H01L 21/768 H01L 23/48<br />

B81C 1/00<br />

(25) En (26) En<br />

(21) 10707405.6 (22) <strong>02</strong>.03.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/<strong>02</strong>5831 <strong>02</strong>.03.2010<br />

(87) WO 2010/101858 2010/36 10.09.2010<br />

(88) 28.10.2010<br />

(30) 05.03.2009 US 398235<br />

(54) • HERMETISCHE KAPSELUNG VON INTEG-<br />

RIERTEN SCHALTUNGSKOMPONENTEN<br />

146<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>02</strong>/<strong>2012</strong>) 11.01.<strong>2012</strong><br />

• HERMETIC PACKAGING OF INTEGRATED<br />

CIRCUIT COMPONENTS<br />

• BOÎTIER HERMÉTIQUE POUR COMPO-<br />

SANTS DE CIRCUIT INTÉGRÉ<br />

(71) Raytheon Company, 870 Winter Street,<br />

Waltham, MA <strong>02</strong>451-1449, US<br />

(72) CHAHAL, Premjeet, Gurnee, IL 60031, US<br />

MORRIS, Francis, J., Dallas, TX 75248, US<br />

(74) Lawrence, John, et al, Barker Brettell LLP<br />

100 Hagley Road, Edgbaston Birmingham<br />

B16 8QQ, GB<br />

H01L 23/48 → (51) H01L 23/10<br />

H01L 23/522 → (51) H01F 17/00<br />

H01L 27/142 → (51) H01L 31/032<br />

H01L 27/32 → (51) H01L 51/52<br />

H01L 29/49 → (51) H01L 21/283<br />

(51) H01L 31/00 (11) 2 404 321 A1*<br />

(25) En (26) En<br />

(21) 10749451.0 (22) 08.03.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/<strong>02</strong>6566 08.03.2010<br />

(87) WO 2010/1<strong>02</strong>303 2010/36 10.09.2010<br />

(30) 06.03.2009 US 157989 P<br />

03.06.2009 US 183796 P<br />

06.11.2009 US 258753 P<br />

(54) • LEICHTGEWICHTIGE SOLARZELLMODULE<br />

• LIGHT WEIGHT SOLAR CELL MODULES<br />

• MODULES À PILE SOLAIRE DE FAIBLE<br />

POIDS<br />

(71) E. I. du Pont de Nemours and Company,<br />

1007 Market Street, Wilmington, DE 19898,<br />

US<br />

(72) TAKAGI, Naoto, Yokohama 224-0061, JP<br />

KOISHIKAWA, Jun, Kanagawa Prefecture,<br />

252-0334, JP<br />

PROOST, Kristof, B-2620 Hemiksem, BE<br />

KAPUR, Jane, Kennett Square, Pennsylvania<br />

19348-2655, US<br />

SMITH, Charles, Anthony, Vienna, West<br />

Virginia 26105, US<br />

STELZER, Ingo, 14467 Potsdam, DE<br />

(74) Heinemann, Monica, Abitz & Partner <strong>Patent</strong>anwälte<br />

Hörselbergstrasse 5, 81677<br />

München, DE<br />

(51) H01L 31/<strong>02</strong>24 (11) 2 404 322 A2*<br />

H01L 31/068 H01L 31/18<br />

G01R 31/26 G01R 31/265<br />

H01L 21/66<br />

(25) De (26) De<br />

(21) 10704123.8 (22) 25.01.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) EP 2010/050765 25.01.2010<br />

(87) WO 2010/099998 2010/36 10.09.2010<br />

(88) 28.04.2011<br />

(30) 04.03.2009 DE 1<strong>02</strong>009011640<br />

23.04.2009 DE 1<strong>02</strong>009018653<br />

(54) • VERFAHREN ZUR HERSTELLUNG VON<br />

HALBLEITERBAUELEMENTEN UNTER<br />

NUTZUNG VON DOTIERUNGSTECHNIKEN<br />

• METHOD FOR PRODUCING SEMICON-<br />

DUCTOR COMPONENTS USING DOPING<br />

TECHNIQUES<br />

• PROCÉDÉ POUR PRODUIRE DES COM-<br />

POSANTS SEMI-CONDUCTEURS À L'AIDE<br />

DE TECHNIQUES DE DOPAGE<br />

(71) Robert Bosch GmbH, Wernerstrasse 1,<br />

70469 Stuttgart, DE<br />

(72) WÜTHERICH, Tobias, 99084 Erfurt, DE

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