Bulletin 2012/02 - European Patent Office
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(G03F) II.1(1)<br />

(74) Gowshall, Jonathan Vallance, Forrester &<br />

Boehmert Pettenkoferstrasse 20-22, 80336<br />

München, DE<br />

(60) 11179056.4 / 2 390 721<br />

(51) G03F 7/00 (11) 2 150 854 B1<br />

(25) De (26) De<br />

(21) 08758604.6 (22) 17.05.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(43) 10.<strong>02</strong>.2010<br />

(86) EP 2008/003985 17.05.2008<br />

(87) WO 2008/145268 2008/49 04.12.2008<br />

(30) 26.05.2007 DE 1<strong>02</strong>007<strong>02</strong>4653<br />

(54) • STEMPEL FÜR DAS MIKROKONTAKT-<br />

DRUCKEN UND VERFAHREN ZU SEINER<br />

HERSTELLUNG<br />

• DIE FOR MICRO-CONTACT PRINTING AND<br />

METHOD FOR THE PRODUCTION<br />

THEREOF<br />

• POINÇON POUR IMPRESSION PAR<br />

MICROCONTACT ET SON PROCEDE DE<br />

FABRICATION<br />

(73) Karlsruher Institut für Technologie, Kaiserstrasse<br />

12, 76131 Karlsruhe, DE<br />

(72) WALHEIM, Stefan, 76356 Weingarten, DE<br />

SCHIMMEL, Thomas, 76131 Karlsruhe, DE<br />

GRÖGER, Roland, 76646 Bruchsal, DE<br />

(74) Gärtner, Stephan, Karlsruher Institut für<br />

Technologie Stabsabteilung Innovation<br />

Postfach 36 40, 76<strong>02</strong>1 Karlsruhe, DE<br />

G03F 7/00 → (51) C09B 67/20<br />

G03F 7/00 → (51) G03C 1/76<br />

G03F 7/00 → (51) G03F 7/004<br />

(51) G03F 7/004 (11) 1 744 212 B1<br />

G03F 7/031<br />

(25) En (26) En<br />

(21) 06014591.9 (22) 13.07.2006<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 17.01.2007<br />

(30) 13.07.2005 JP 2005204538<br />

13.07.2005 JP 2005204539<br />

(54) • Lichtempfindliche Zusammensetzung<br />

• Photosensitive composition<br />

• Composition photosensible<br />

(73) FUJIFILM Corporation, 26-30, Nishiazabu 2chome,<br />

Minato-ku Tokyo, JP<br />

(72) Hanaki, Naoyuki, Minami-Ashigara-shi,<br />

Kanagawa, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastraße 4, 81925 München, DE<br />

(51) G03F 7/004 (11) 2 <strong>02</strong>4 790 B1<br />

G03F 7/00<br />

(25) En (26) En<br />

(21) 07795130.9 (22) 18.05.2007<br />

(84) DE GB NL<br />

(43) 18.<strong>02</strong>.2009<br />

(86) US 2007/012099 18.05.2007<br />

(87) WO 2007/142809 2007/50 13.12.2007<br />

(30) <strong>02</strong>.06.2006 US 421894<br />

(54) • NANOPARTIKEL-STRUKTURIERUNGS-<br />

PROZESS<br />

• NANOPARTICLE PATTERNING PROCESS<br />

• PROCÉDÉ DE STRUCTURATION DE<br />

NANOPARTICULES<br />

(73) Eastman Kodak Company, 343 State Street,<br />

Rochester, NY 14650-2201, US<br />

(72) TUTT, Lee, W., Webster, NY 14580, US<br />

FELLER, Therese, M., Rochester, NY 14612,<br />

US<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(74) Weber, Etienne Nicolas, Kodak Etablissement<br />

de Chalon Campus Industriel - Département<br />

Brevets Route de Demigny - Z.I. Nord - B.P.<br />

21, 711<strong>02</strong> Chalon-sur-Saône Cedex, FR<br />

(51) G03F 7/004 (11) 2 142 960 B1<br />

(25) En (26) En<br />

(21) 08730646.0 (22) 25.<strong>02</strong>.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(43) 13.01.2010<br />

(86) US 2008/054885 25.<strong>02</strong>.2008<br />

(87) WO 2008/127785 2008/43 23.10.2008<br />

(30) 17.04.2007 US 736429<br />

(54) • GEGEN KONZENTRIERTE WÄSSRIGE BASE<br />

BESTÄNDIGER NEGATIV-PHOTORESIST<br />

FÜR SILIZIUM-NASSÄTZUNG OHNE SILI-<br />

ZIUMNITRID<br />

• NEGATIVE PHOTORESIST RESISTANT TO<br />

CONCENTRATED AQUEOUS BASES FOR<br />

SILICON WET-ETCH WITHOUT SILICON<br />

NITRIDE<br />

• RESINE PHOTOSENSIBLE NEGATIVE<br />

RESISTANTE AUX BASES AQUEUSES<br />

CONCENTREES POUR UNE GRAVURE<br />

HUMIDE DE SILICIUM SANS NITRURE DE<br />

SILICIUM<br />

(73) Brewer Science, Inc., 2401 Brewer Drive,<br />

Rolla, MO 65401, US<br />

(72) ZHONG, Xing-fu, Rolla, MO 65401, US<br />

FLAIM, Tony, D., St James, MO 65559, US<br />

MALHOTRA, Jyoti, Rolla, MO 65401, US<br />

(74) UEXKÜLL & STOLBERG, <strong>Patent</strong>anwälte<br />

Beselerstrasse 4, 22607 Hamburg, DE<br />

G03F 7/004 → (51) G03F 7/038<br />

G03F 7/004 → (51) G03F 7/075<br />

G03F 7/008 → (51) G03F 7/00<br />

G03F 7/012 → (51) G03F 7/00<br />

(51) G03F 7/<strong>02</strong>3 (11) 2 083 326 B1<br />

G03F 7/032 G03F 7/037<br />

H01L 21/<strong>02</strong>7<br />

(25) Ja (26) En<br />

(21) 07831681.7 (22) 13.11.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

(43) 29.07.2009<br />

(86) JP 2007/071951 13.11.2007<br />

(87) WO 2008/059808 2008/21 22.05.2008<br />

(30) 15.11.2006 JP 2006309287<br />

(54) • LICHTEMPFINDLICHE HARZZUSAMMEN-<br />

SETZUNG, ISOLATIONSFOLIE, SCHUTZ-<br />

FOLIE UND ELEKTRONISCHE<br />

AUSRÜSTUNG DAFÜR<br />

• PHOTOSENSITIVE RESIN COMPOSITION,<br />

INSULATING FILM, PROTECTIVE FILM,<br />

AND ELECTRONIC EQUIPMENT<br />

• COMPOSITION DE RÉSINE PHOTOSEN-<br />

SIBLE, FILM ISOLANT, FILM PROTECTEUR<br />

ET ÉQUIPEMENT ÉLECTRONIQUE<br />

(73) Sumitomo Bakelite Company, Ltd., 5-8,<br />

Higashi-Shinagawa 2-chome Shinagawa-ku,<br />

Tokyo 140-00<strong>02</strong>, JP<br />

(72) TOYODA, Hideyuki, Tokyo 140-00<strong>02</strong>, JP<br />

(74) Solf, Alexander, <strong>Patent</strong>anwälte Dr. Solf &<br />

Zapf Candidplatz 15, 81543 München, DE<br />

G03F 7/<strong>02</strong>7 → (51) G03F 7/11<br />

G03F 7/031 → (51) G03F 7/004<br />

621<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>02</strong>/<strong>2012</strong>) 11.01.<strong>2012</strong><br />

G03F 7/032 → (51) G03F 7/<strong>02</strong>3<br />

G03F 7/033 → (51) G03F 7/36<br />

G03F 7/037 → (51) G03F 7/<strong>02</strong>3<br />

(51) G03F 7/038 (11) 1 205 804 B1<br />

G03F 7/004<br />

(25) En (26) En<br />

(21) 01126038.7 (22) 31.10.2001<br />

(84) BE DE FR GB NL<br />

(43) 15.05.20<strong>02</strong><br />

(30) 08.11.2000 JP 200034<strong>02</strong>35<br />

(54) • Lichtempfindliche Zusammensetzung und<br />

Leiterplatte<br />

• Photosensitive resin composition and circuit<br />

board<br />

• Composition photosensible et carte de<br />

circuit imprimé<br />

(73) NITTO DENKO CORPORATION, 1-2, Shimohozumi<br />

1-chome Ibaraki-shi, Osaka, JP<br />

(72) Hayashi, Shunichi, c/o Nitto Denko Corporation,<br />

Ibaraki-shi, Osaka, JP<br />

Fujii, Hirofumi, c/o Nitto Denko Corporation,<br />

Ibaraki-shi, Osaka, JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser,<br />

Anwaltssozietät Leopoldstrasse 4,<br />

808<strong>02</strong> München, DE<br />

G03F 7/038 → (51) G03F 7/09<br />

G03F 7/039 → (51) G03F 7/075<br />

(51) G03F 7/075 (11) 2 109 001 B1<br />

G03F 7/004 G03F 7/039<br />

(25) Ja (26) En<br />

(21) 08703494.8 (22) 18.01.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(43) 14.10.2009<br />

(86) JP 2008/050644 18.01.2008<br />

(87) WO 2008/090827 2008/31 31.07.2008<br />

(30) 22.01.2007 JP 2007011414<br />

(54) • POSITIV-LICHTEMPFINDLICHE HARZZU-<br />

SAMMENSETZUNG<br />

• POSITIVE PHOTOSENSITIVE RESIN COM-<br />

POSITION<br />

• COMPOSITION DE RESINE PHOTOSEN-<br />

SIBLE POSITIVE<br />

(73) Nissan Chemical Industries, Ltd., 7-1,<br />

Kanda-Nishikicho 3-chome Chiyoda-ku,<br />

Tokyo 101-0054, JP<br />

(72) HATANAKA, Tadashi, Toyama-shi Toyama<br />

939-2753, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastraße 4, 81925 München, DE<br />

(51) G03F 7/09 (11) 1 563 343 B1<br />

G03F 7/038<br />

(25) En (26) En<br />

(21) 03775309.2 (22) 06.11.2003<br />

(84) BE DE FR GB IT NL<br />

(43) 17.08.2005<br />

(86) EP 2003/012383 06.11.2003<br />

(87) WO 2004/046828 2004/23 03.06.2004<br />

(30) 21.11.20<strong>02</strong> US 301462<br />

(54) • ANTIREFLEKTIERENDE ZUSAMMENSET-<br />

ZUNGEN FÜR FOTORESISTE<br />

• ANTIREFLECTIVE COMPOSITIONS FOR<br />

PHOTORESISTS<br />

• COMPOSITIONS ANTIREFLET POUR<br />

RESINES PHOTOSENSIBLES<br />

(73) AZ Electronic Materials USA Corp., 70<br />

Meister Avenue, Somerville, NJ 08876, US<br />

(72) WU, Hengpeng, Hillsborough, NJ 08844, US<br />

DING-LEE, Shuji, Branchburg, NJ 08876, US<br />

XIANG, Zhong, Orlando, FL 32814, US

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