Bulletin 2012/02 - European Patent Office
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(H01L) I.1(2)<br />

(74) Wonnemann, Jörg, Atotech Deutschland<br />

GmbH <strong>Patent</strong> Management Erasmusstraße<br />

20, 10553 Berlin, DE<br />

(51) H01L 21/48 (11) 2 405 469 A1<br />

H01L 23/498<br />

(25) En (26) En<br />

(21) 10168474.4 (22) 05.07.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO SE SI SK SM TR<br />

BA ME RS<br />

(54) • Verfahren zur Formung von Lötlegierungsablagerungen<br />

auf Substraten<br />

• Method to form solder alloy deposits on<br />

substrates<br />

• Procédé pour la formation de dépôts<br />

d'alliage de soudure sur des substrats<br />

(71) ATOTECH Deutschland GmbH, Erasmusstrasse<br />

20, 10553 Berlin, DE<br />

(72) Matejat, Kai-Jens, 14109 Berlin, DE<br />

Lamprecht, Sven, 16727 Oberkrämer/Eichstädt,<br />

DE<br />

Ewert, Ingo, 14167 Berlin, DE<br />

(74) Wonnemann, Jörg, Atotech Deutschland<br />

GmbH <strong>Patent</strong> Management Erasmusstraße<br />

20, 10553 Berlin, DE<br />

(51) H01L 21/48 (11) 2 405 470 A2<br />

H01L 21/50 H01L 23/055<br />

(25) En (26) En<br />

(21) 11173337.4 (22) 08.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 08.07.2010 JP 2010156171<br />

(54) • Verfahren zur Herstellung eines Durchgangselektroden-befestigten<br />

Glassubstrats<br />

und Verfahren zur Herstellung einer elektronischen<br />

Komponente<br />

• Method of manufacturing through electrode-attached<br />

glass substrate and method<br />

of manufacturing electronic component<br />

• Procédé de fabrication de substrat de verre<br />

fixé sur électrode et procédé de fabrication<br />

du composant électronique<br />

(71) Seiko Instruments Inc., 8, Nakase 1-chome,<br />

Mihama-ku, Chiba-shi, Chiba, JP<br />

(72) Kawai, Noboru, Chiba-shi,, Chiba, JP<br />

(74) Cloughley, Peter Andrew, Miller Sturt Kenyon<br />

9 John Street, London WC1N 2ES, GB<br />

(51) H01L 21/48 (11) 2 405 471 A2<br />

H01L 21/50 H01L 23/055<br />

(25) En (26) En<br />

(21) 11173340.8 (22) 08.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 08.07.2010 JP 2010156170<br />

(54) • Verfahren zur Herstellung eines Durchgangselektroden-befestigten<br />

Glassubstrats<br />

und Verfahren zur Herstellung einer elektronischen<br />

Komponente<br />

• Method of Manufacturing through Electrode-Attached<br />

Glass Substrate and<br />

Method of Manufacturing Electronic Component<br />

• Procédé de fabrication de substrat de verre<br />

fixé sur électrode et procédé de fabrication<br />

du composant électronique<br />

(71) Seiko Instruments Inc., 8, Nakase 1-chome,<br />

Mihama-ku, Chiba-shi, Chiba, JP<br />

(72) Kawai, Noboru, Chiba, JP<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(74) Cloughley, Peter Andrew, Miller Sturt Kenyon<br />

9 John Street, London WC1N 2ES, GB<br />

(51) H01L 21/48 (11) 2 405 472 A2<br />

H01L 21/50 H01L 23/055<br />

(25) En (26) En<br />

(21) 11173343.2 (22) 08.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 08.07.2010 JP 2010156172<br />

(54) • Verfahren zur Herstellung eines Glassubstrats<br />

und Verfahren zur Herstellung<br />

elektronischer Komponenten<br />

• Method of Manufacturing Glass Substrate<br />

and Method of Manufacturing Electronic<br />

Components<br />

• Procédé de fabrication de substrat de verre<br />

et procédé de fabrication de composants<br />

électroniques<br />

(71) Seiko Instruments Inc., 8, Nakase 1-chome,<br />

Mihama-ku, Chiba-shi, Chiba, JP<br />

(72) Terao, Eiji, Chiba, JP<br />

(74) Cloughley, Peter Andrew, Miller Sturt Kenyon<br />

9 John Street, London WC1N 2ES, GB<br />

(51) H01L 21/48 (11) 2 405 473 A2<br />

H01L 21/50 H01L 23/055<br />

(25) En (26) En<br />

(21) 11173348.1 (22) 08.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 08.07.2010 JP 2010156173<br />

(54) • Verfahren zur Herstellung eines Glassubstrats<br />

und Verfahren zur Herstellung<br />

elektronischer Komponenten<br />

• Method of manufacturing glass substrate<br />

and method of manufacturing electronic<br />

components<br />

• Procédé de fabrication de substrat de verre<br />

et procédé de fabrication de composants<br />

électroniques<br />

(71) Seiko Instruments Inc., 8, Nakase 1-chome,<br />

Mihama-ku, Chiba-shi, Chiba, JP<br />

(72) Terao, Eiji, Chiba-shi,, Chiba, JP<br />

(74) Cloughley, Peter Andrew, Miller Sturt Kenyon<br />

9 John Street, London WC1N 2ES, GB<br />

H01L 21/50 → (51) H01L 21/48<br />

(51) H01L 21/60 (11) 2 405 474 A1<br />

(25) Ja (26) En<br />

(21) 10748829.8 (22) 05.03.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) JP 2010/053615 05.03.2010<br />

(87) WO 2010/101236 2010/36 10.09.2010<br />

(30) 06.03.2009 JP 2009053085<br />

(54) • LÖTHÖCKER, VERFAHREN ZUR FORMUNG<br />

DES LÖTHÖCKERS SOWIE VERFAHREN<br />

ZUR MONTAGE EINES SUBSTRATS MIT<br />

DARAUF GEFORMTEM LÖTHÖCKER<br />

• BUMP, METHOD FOR FORMING THE<br />

BUMP, AND METHOD FOR MOUNTING<br />

SUBSTRATE HAVING THE BUMP FORMED<br />

THEREON<br />

• BOSSE, PROCÉDÉ DE FORMATION DE<br />

BOSSE ET PROCÉDÉ DE MONTAGE D'UN<br />

SUBSTRAT COMPRENANT LA BOSSE<br />

FORMÉE SUR LUI<br />

(71) Tanaka Kikinzoku Kogyo K.K., 7-3, Marunouchi<br />

2-chome, Chiyoda-ku Tokyo 100-<br />

6422, JP<br />

291<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>02</strong>/<strong>2012</strong>) 11.01.<strong>2012</strong><br />

(72) OGASHIWA, Toshinori, Hiratsuka-shi Kanagawa<br />

254-0076, JP<br />

MIYAIRI, Masayuki, Hiratsuka-shi Kanagawa<br />

254-0<strong>02</strong>1, JP<br />

(74) Dey, Michael, et al, Weickmann & Weickmann<br />

<strong>Patent</strong>anwälte Postfach 860820,<br />

81635 München, DE<br />

H01L 21/66 → (51) H01L 31/042<br />

(51) H01L 21/67 (11) 2 405 475 A1<br />

H01L 21/687<br />

(25) En (26) En<br />

(21) 10174351.6 (22) 27.08.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO SE SI SK SM TR<br />

BA ME RS<br />

(30) 07.07.2010 KR 20100065252<br />

(54) • Plasmaätzvorrichtung<br />

• Plasma texturing apparatus<br />

• Dispositif de gravure avec plasma.<br />

(71) Semi-Materials Co., Ltd, 4F. Lojit Venture<br />

Bldg. 22-2 Sunae-dong Bundang-gu,<br />

Seongnam-si, Gyeonggi-do 440-746, KR<br />

(72) Park, Kun Joo, Gyeonggi-do, KR<br />

Kim, Yong Gab, Gyeongsangbuk-do, KR<br />

Kim, Gi Hong, Daegu-si, KR<br />

Park, Kun, Gyeonggi-do, KR<br />

(74) Neobard, William John, et al, Kilburn &<br />

Strode LLP 20 Red Lion Street, London<br />

WC1R 4PJ, GB<br />

(51) H01L 21/67 (11) 2 405 476 A2<br />

(25) En (26) En<br />

(21) 11173233.5 (22) 08.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 09.07.2010 JP 2010156592<br />

(54) • Beschichtung und Entwicklungsvorrichtung<br />

und -verfahren<br />

• Coating and developing apparatus and<br />

method<br />

• Appareil de revêtement et de développement<br />

et procédé<br />

(71) Tokyo Electron Limited, 3-1 Akasaka 5chome<br />

Minato-ku, Tokyo 107-6325, JP<br />

(72) Matsuoka, Nobuaki, Kumamoto-ken, JP<br />

Miyata, Akira, Kumamoto-ken, JP<br />

Hayashi, Shinichi, Kumamoto-ken, JP<br />

Enokida, Suguru, Kumamoto-ken, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastraße 4, 81925 München, DE<br />

(51) H01L 21/67 (11) 2 405 477 A2<br />

(25) En (26) En<br />

(21) 11173234.3 (22) 08.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 09.07.2010 JP 2010156568<br />

(54) • Verfahren und Vorrichtung zur Beschichtung<br />

und zur Entwicklung<br />

• Coating and developing apparatus and<br />

method<br />

• Méthode et appareil de revêtement et de<br />

développement<br />

(71) Tokyo Electron Limited, 3-1, Akasaka 5chome<br />

Minato-ku, Tokyo 107-6325, JP<br />

(72) Matsuoka, Nobuaki, Kumamoto-ken, JP<br />

Miyata, Akira, Kumamoto-ken, JP<br />

Hayashi, Shinichi, Kumamoto-ken, JP<br />

Enokida, Suguru, Kumamoto-ken, JP<br />

Tomita, Hiroshi, Kumamoto-ken, JP

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