Bulletin 2012/02 - European Patent Office
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(H01L) I.1(2)<br />

• Dispositif électroluminescent semiconducteur<br />

et son procédé de fabrication<br />

(71) Samsung LED Co., Ltd., 314, Maetan 3-dong<br />

Yeoungtong-gu Suwon-si, Gyeonggi-do,<br />

443-743, KR<br />

(72) Yang, Jong-in, Gyeonggi-do, KR<br />

Kim, Tae-hyung, ., KR<br />

Lee, Si-hyuk, Gyeonggi-do, KR<br />

Song, Sang-yeob, Gyeonggi-do, KR<br />

Sone, Cheol-soo, Seoul, KR<br />

Kim, Hak-hwan, Gyeonggi-do, KR<br />

Lee, Jin-hyun, Gyeonggi-do, KR<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser,<br />

Anwaltssozietät Leopoldstrasse 4,<br />

808<strong>02</strong> München, DE<br />

(51) H01L 33/00 (11) 2 405 493 A2<br />

H01L 33/20 H01L 33/38<br />

H01L 33/44 H01L 33/40<br />

(25) En (26) En<br />

(21) 11173035.4 (22) 07.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 08.07.2010 KR 20100065967<br />

05.08.2010 KR 20100075670<br />

17.08.2010 KR 20100079225<br />

(54) • Lichtemittierendes Halbleiterbauelement<br />

und Herstellungsverfahren dafür<br />

• Semiconductor light-emitting device and<br />

method of manufacturing the same<br />

• Dispositif électroluminescent semiconducteur<br />

et son procédé de fabrication<br />

(71) Samsung LED Co., Ltd., 314, Maetan 3-dong<br />

Yeoungtong-gu Suwon-si, Gyeonggi-do,<br />

443-743, KR<br />

(72) Yang, Jong-in, Gyeonggi-do, KR<br />

Kim, Tae-hyung, ., KR<br />

Lee, Si-hyuk, Gyeonggi-do, KR<br />

Song, Sang-yeob, Gyeonggi-do, KR<br />

Sone, Cheol-soo, Seoul, KR<br />

Kim, Hak-hwan, Gyeonggi-do, KR<br />

Lee, Jin-hyun, Gyeonggi-do, KR<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser,<br />

Anwaltssozietät Leopoldstrasse 4,<br />

808<strong>02</strong> München, DE<br />

(51) H01L 33/06 (11) 2 405 494 A2<br />

H01L 33/08<br />

(25) En (26) En<br />

(21) 11175397.6 (22) 26.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 09.07.2010 KR 20100066396<br />

14.07.2010 KR 20100068122<br />

10.08.2010 KR 20100076758<br />

(54) • Lichtemittierende Vorrichtung, Gehäuse für<br />

lichtemittierende Vorrichtung und<br />

Beleuchtungssystem damit<br />

• Light emitting device, light emitting device<br />

package, and lighting system including the<br />

same<br />

• Dispositif électroluminescent, conditionnement<br />

de dispositif électroluminescent et<br />

système d'éclairage l'incluant<br />

(71) LG Innotek Co., Ltd., Seoul Square 541,<br />

Namdaemunno 5-ga Jung-gu, Seoul 100-<br />

714, KR<br />

(72) Moon, Yong Tae, 100-714 Seoul, KR<br />

Lee, Jeong Sik, 100-714 Seoul, KR<br />

Han, Dae Seob, 100-714 Seoul, KR<br />

(74) Zardi, Marco, M. Zardi & Co. S.A. Via Pioda<br />

6, 6900 Lugano, CH<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(51) H01L 33/14 (11) 2 405 495 A2<br />

H01L 33/16 H01L 33/42<br />

(25) En (26) En<br />

(21) 11172712.9 (22) 05.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 05.07.2010 KR 20100064560<br />

(54) • Lichtemittierende Diode und Herstellungsverfahren<br />

dafür<br />

• Light emitting diode and method of<br />

fabricating the same<br />

• Diode électroluminescente et son procédé<br />

de fabrication<br />

(71) LG Innotek Co., Ltd., Seoul Square 541,<br />

Namdaemunno 5-ga Jung-gu, Seoul 100-<br />

714, KR<br />

(72) Choi, Kwang Ki, 100-714 Seoul, KR<br />

Jeong, Hwan Hee, 100-714 Seoul, KR<br />

Lee, Sang Youl, 100-714 Seoul, KR<br />

Song, June O, 100-714 Seoul, KR<br />

Moon, Ji Hyung, 100-714 Seoul, KR<br />

Jung, Se Yeon, 100-714 Seoul, KR<br />

Seong, Tae Yeon, 100-714 Seoul, KR<br />

(74) Cabinet Plasseraud, 52, rue de la Victoire,<br />

75440 Paris Cedex 09, FR<br />

H01L 33/16 → (51) H01L 33/14<br />

(51) H01L 33/18 (11) 2 405 496 A2<br />

H01L 33/32 H01L 33/10<br />

(25) En (26) En<br />

(21) 11173189.9 (22) 08.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 08.07.2010 KR 20100065976<br />

(54) • Lichtemittierende Vorrichtung mit einer N-<br />

Kristallfläche an der Grenzfläche zwischen<br />

zwei n-leitenden Halbleiterschichten<br />

• Light emitting device with an N-face<br />

between two n-type semiconductor layers<br />

• Dispositif électroluminescent avec une face<br />

N entre deux couches semiconductrices de<br />

type-n.<br />

(71) LG Innotek Co., Ltd., Seoul Square 20F 541,<br />

Namdaemunno 5-ga Jung-gu, Seoul 100-<br />

714, KR<br />

(72) Jung, Myung Hoon, 100-714 Seoul, KR<br />

Son, Hyo Kun, 100-714 Seoul, KR<br />

(74) Zardi, Marco, M. Zardi & Co. S.A. Via Pioda<br />

6, 6900 Lugano, CH<br />

H01L 33/20 → (51) H01L 33/00<br />

(51) H01L 33/22 (11) 2 405 497 A2<br />

H01L 33/14<br />

(25) En (26) En<br />

(21) 11172594.1 (22) 04.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 05.07.2010 KR 20100064559<br />

(54) • Lichtemittierende Vorrichtung mit einer<br />

aufgerauhten Oberfläche und Verfahren zu<br />

deren Herstellung<br />

• Light emitting device having an roughened<br />

surface and method of manufacturing the<br />

same<br />

• Dispositif électroluminescent avec une<br />

surface texturée et son procédé de fabrication<br />

294<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>02</strong>/<strong>2012</strong>) 11.01.<strong>2012</strong><br />

(71) LG Innotek Co., Ltd., Seoul Square 541<br />

Namdaemunno 5-ga Jung-gu, Seoul 100-<br />

714, KR<br />

(72) Choi, Kwang Ki, 100-714 Seoul, KR<br />

Jeong, Hwan Hee, 100-714 Seoul, KR<br />

Moon, Ji Hyung, 100-714 Seoul, KR<br />

Lee, Sang Youl, 100-714 Seoul, KR<br />

Song, June O, 100-714 Seoul, KR<br />

Jung, Se Yeon, 100-714 Seoul, KR<br />

Seong, Tae Yeon, 100-714 Seoul, KR<br />

(74) Cabinet Plasseraud, 52, rue de la Victoire,<br />

75440 Paris Cedex 09, FR<br />

(51) H01L 33/32 (11) 2 405 498 A1<br />

(25) Ja (26) En<br />

(21) 10748863.7 (22) <strong>02</strong>.03.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) JP 2010/053727 <strong>02</strong>.03.2010<br />

(87) WO 2010/101272 2010/36 10.09.2010<br />

(30) 03.03.2009 JP 2009049833<br />

(54) • VERBUNDSTOFFSUBSTRAT ZUR FOR-<br />

MUNG EINES LICHTEMITTIERENDEN<br />

ELEMENTS, GERÄT MIT LICHTEMITTIER-<br />

ENDEN DIODEN UND VERFAHREN ZU<br />

DESSEN HERSTELLUNG<br />

• COMPOSITE SUBSTRATE FOR FORMING<br />

LIGHT-EMITTING DEVICE, LIGHT EMIT-<br />

TING DIODE DEVICE, AND METHOD OF<br />

PRODUCING SAME<br />

• SUBSTRAT COMPOSITE POUR FORMA-<br />

TION DE DISPOSITIF ÉLECTROLUMINES-<br />

CENT, DISPOSITIF À DIODE<br />

ÉLECTROLUMINESCENTE ET SON PRO-<br />

CÉDÉ DE FABRICATION<br />

(71) Ube Industries, Ltd., 1978-96, Oaza Kogushi,<br />

Ube-shi Yamaguchi 755-8633, JP<br />

Riken, 2-1 Hirosawa, Wako-shi, Saitama<br />

351-0198, JP<br />

(72) ICHIZONO, Yasuyuki, Ube-shi Yamaguchi<br />

755-8633, JP<br />

HIRAYAMA, Hideki, Wako-shi Saitama 351-<br />

0198, JP<br />

(74) Deak, Peter Michael, Hoeger, Stellrecht &<br />

Partner <strong>Patent</strong>anwälte Uhlandstraße 14c, D-<br />

70182 Stuttgart, DE<br />

(51) H01L 33/38 (11) 2 405 499 A2<br />

H01L 33/40 H01L 33/44<br />

(25) En (26) En<br />

(21) 11172588.3 (22) 04.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 05.07.2010 KR 20100064487<br />

(54) • Lichtemittierende Diode und Herstellungsverfahren<br />

dafür<br />

• Light-emitting diode and fabrication<br />

method thereof<br />

• Diode électroluminescente et son procédé<br />

de fabrication<br />

(71) LG Innotek Co., Ltd., Seoul Square 20F 541,<br />

Namdaemunno 5-ga Jung-gu, Seoul 100-<br />

714, KR<br />

(72) Park, KyungWook, 100-714 SEOUL, KR<br />

(74) Cabinet Plasseraud, 52, rue de la Victoire,<br />

75440 Paris Cedex 09, FR<br />

H01L 33/38 → (51) H01L 33/00<br />

(51) H01L 33/40 (11) 2 405 500 A2<br />

H01L 33/04<br />

H01L 33/46<br />

H01L 33/10<br />

(25) En (26) En<br />

(21) 11175424.8 (22) 26.07.2011

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