Bulletin 2010/15 - European Patent Office
Bulletin 2010/15 - European Patent Office
Bulletin 2010/15 - European Patent Office
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(H01L) I.1(2)<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HR HU IE IS IT LI LT LU LV MC MT NL<br />
NO PL PT RO SE SI SK TR<br />
AL BA MK RS<br />
(86) JP 2008/062266 07.07.2008<br />
(87) WO 2009/016928 2009/06 05.02.2009<br />
(30) 31.07.2007 JP 2007199122<br />
(54) • HALBLEITERBAUELEMENT UND HER-<br />
STELLUNGSVERFAHREN DAFÜR<br />
• SEMICONDUCTOR DEVICE AND METHOD<br />
FOR MANUFACTURING THE SAME<br />
• DISPOSITIF SEMI-CONDUCTEUR ET SON<br />
PROCÉDÉ DE FABRICATION<br />
(71) Rohm Co., Ltd., 21, Saiin Mizosaki-cho,<br />
Ukyo-ku, Kyoto-shi, Kyoto 6<strong>15</strong>8585, JP<br />
(72) HIGASHIDA, Shouji, Kyoto-shi Kyoto 6<strong>15</strong>-<br />
8585, JP<br />
(74) TBK-<strong>Patent</strong>, Bavariaring 4-6, 80336<br />
München, DE<br />
H01L 27/04 → (51) H01L 27/092<br />
(51) H01L 27/092 (11) 2 175 489 A1<br />
H01L 21/8238 H01L 21/3205<br />
H01L 21/822 H01L 23/52<br />
H01L 27/04 H01L 29/786<br />
(25) Ja (26) En<br />
(21) 08764759.0 (22) 27.05.2008<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HR HU IE IS IT LI LT LU LV MC MT NL<br />
NO PL PT RO SE SI SK TR<br />
AL BA MK RS<br />
(86) JP 2008/059731 27.05.2008<br />
(87) WO 2009/016880 2009/06 05.02.2009<br />
(30) 02.08.2007 JP 2007201687<br />
(54) • HALBLEITERBAUELEMENT<br />
• SEMICONDUCTOR DEVICE<br />
• DISPOSITIF SEMI-CONDUCTEUR<br />
(71) Unisantis Electronics (Japan) Ltd., 2F Fujilight<br />
Shinkawa Bldg. 22-11 Shinkawa 1chome,<br />
Chuo-ku Tokyo 104-0033, JP<br />
(72) MASUOKA, Fujio, Tokyo 104-0033, JP<br />
NAKAMURA, Hiroki, Tokyo 104-0033, JP<br />
(74) Röthinger, Rainer, Wuesthoff & Wuesthoff<br />
<strong>Patent</strong>- und Rechtsanwälte Schweigerstrasse<br />
2, 8<strong>15</strong>41 München, DE<br />
H01L 27/12 → (51) H01L 21/02<br />
(51) H01L 27/32 (11) 2 175 490 A2<br />
H01L 51/50 H01L 51/52<br />
(25) En (26) En<br />
(21) 09172511.9 (22) 08.10.2009<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HR HU IE IS IT LI LT LU LV MC MK MT<br />
NL NO PL PT RO SE SI SK SM TR<br />
AL BA RS<br />
(30) 10.10.2008 JP 2008264193<br />
28.09.2009 JP 2009222634<br />
(54) • Organische elektrolumineszente Anzeigevorrichtung<br />
• Organic el display apparatus<br />
• Dispositif organique électroluminescent<br />
d'affichage<br />
(71) Canon Kabushiki Kaisha, 30-2 Shimomaruko<br />
3-chome Ohta-ku, Tokyo 146-8501, JP<br />
(72) Mori, Toshifumi, Tokyo Tokyo 146-8501, JP<br />
Suzuki, Koichi, Tokyo Tokyo 146-8501, JP<br />
Tsuboyama, Akira, Tokyo Tokyo 146-8501,<br />
JP<br />
Shiobara, Satoru, Tokyo Tokyo 146-8501, JP<br />
Ikari, Kenichi, Tokyo Tokyo 146-8501, JP<br />
(74) TBK-<strong>Patent</strong>, Bavariaring 4-6, 80336<br />
München, DE<br />
(51) H01L 27/32 (11) 2 175 491 A2<br />
(25) En (26) En<br />
Europäisches <strong>Patent</strong>blatt<br />
<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />
<strong>Bulletin</strong> européen des brevets<br />
(21) 09172516.8 (22) 08.10.2009<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HR HU IE IS IT LI LT LU LV MC MK MT<br />
NL NO PL PT RO SE SI SK SM TR<br />
AL BA RS<br />
(30) 10.10.2008 JP 2008264192<br />
24.09.2009 JP 2009219064<br />
(54) • Organische elektrolumineszente Anzeigevorrichtung<br />
• Organic EL display apparatus<br />
• Panneau d'affichage à diodes électroluminescentes<br />
organiques<br />
(71) Canon Kabushiki Kaisha, 30-2 Shimomaruko<br />
3-chome Ohta-ku, Tokyo 146-8501, JP<br />
(72) Ikari, Kenichi, Tokyo Tokyo 146-8501, JP<br />
Tsuboyama, Akira, Tokyo Tokyo 146-8501,<br />
JP<br />
Suzuki, Koichi, Tokyo Tokyo 146-8501, JP<br />
Shiobara, Satoru, Tokyo Tokyo 146-8501, JP<br />
Mori, Toshifumu, Tokyo Tokyo 146-8501, JP<br />
(74) Leson, Thomas Johannes Alois, TBK-<strong>Patent</strong><br />
Bavariaring 4-6, 80336 München, DE<br />
H01L 27/32 → (51) H01L 51/52<br />
H01L 29/20 → (51) H01L 29/80<br />
H01L 29/417 → (51) H01L 27/04<br />
H01L 29/47 → (51) H01L 27/04<br />
H01L 29/778 → (51) H01L 29/80<br />
H01L 29/78 → (51) H01L 27/04<br />
(51) H01L 29/786 (11) 2 175 492 A1<br />
H01L 21/265 H01L 21/336<br />
(25) Ja (26) En<br />
(21) 08710456.8 (22) 22.02.2008<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HR HU IE IS IT LI LT LU LV MC MT NL<br />
NO PL PT RO SE SI SK TR<br />
AL BA MK RS<br />
(86) JP 2008/000303 22.02.2008<br />
(87) WO 2009/016778 2009/06 05.02.2009<br />
(30) 27.07.2007 JP 2007195860<br />
(54) • HALBLEITERBAUELEMENT UND HER-<br />
STELLUNGSVERFAHREN DAFÜR<br />
• SEMICONDUCTOR DEVICE AND METHOD<br />
FOR MANUFACTURING THE SAME<br />
• DISPOSITIF SEMI-CONDUCTEUR ET PRO-<br />
CÉDÉ POUR SA FABRICATION<br />
(71) Panasonic Corporation, 1006, Oaza Kadoma,<br />
Kadoma-shi Osaka 571-8501, JP<br />
(72) SASAKI, Yuichiro c/o Panasonic Corporation<br />
IPROC, Osaka-shi, Osaka 540-6207, JP<br />
OKASHITA, Katsumi c/o Panasonic Corporation<br />
IPROC, Osaka-shi, Osaka 540-6207,<br />
JP<br />
NAKAMOTO, Keiichi; c/o Panasonic Corporation<br />
IPROC, Osaka-shi, Osaka 540-6207,<br />
JP<br />
KANADA, Hisataka; c/o Panasonic Corporation<br />
IPROC, Osaka-shi, Osaka 540-6207, JP<br />
MIZUNO, Bunji c/o Panasonic Corporation<br />
IPROC, Osaka-shi, Osaka 540-6207, JP<br />
(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser<br />
Anwaltssozietät, Leopoldstrasse 4,<br />
80802 München, DE<br />
(51) H01L 29/786 (11) 2 175 493 A1<br />
(25) En (26) En<br />
(21) 09012657.4 (22) 06.10.2009<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HR HU IE IS IT LI LT LU LV MC MK MT<br />
NL NO PL PT RO SE SI SK SM TR<br />
AL BA RS<br />
324<br />
Anmeldungen<br />
Applications<br />
Demandes (<strong>15</strong>/<strong>2010</strong>) 14.04.<strong>2010</strong><br />
(30) 08.10.2008 JP 2008261878<br />
(54) • Feldeffekttransistor und Verfahren zu seiner<br />
Herstellung<br />
• Field effect transistor and process for<br />
production thereof<br />
• Transistor à effet de champ et son procédé<br />
de fabrication<br />
(71) Canon Kabushiki Kaisha, 30-2, Shimomaruko<br />
3-chome Ohta-ku, Tokyo, JP<br />
(72) Iwasaki, Tatsuya, Tokyo, JP<br />
Itagaki, Naho, Tokyo, JP<br />
(74) Weser, Wolfgang, Weser & Kollegen <strong>Patent</strong>anwälte<br />
Radeckestrasse 43, 81245<br />
München, DE<br />
H01L 29/786 → (51) H01L 21/336<br />
H01L 29/786 → (51) H01L 27/092<br />
H01L 29/786 → (51) H01L 31/0216<br />
H01L 29/786 → (51) H05B 33/10<br />
(51) H01L 29/80 (11) 2 175 494 A2<br />
H01L 29/20 H01L 29/778<br />
(25) En (26) En<br />
(21) 09178269.8 (22) 16.03.2006<br />
(84) DE GB<br />
(54) • Verbundhalbleiterbauelement und Herstellungsverfahren<br />
dafür<br />
• Compound semiconductor device and<br />
manufacturing method of the same<br />
• Dispositif semi-conducteur de composant<br />
et son procédé de fabrication<br />
(71) Fujitsu Limited, 1-1, Kamikodanaka 4-chome<br />
Nakahara-ku, Kawasaki-shi, Kanagawa 211-<br />
8588, JP<br />
(72) Kikkawa, Toshihide, Kawasaki-shi Kanagawa<br />
211-8588, JP<br />
(74) Fenlon, Christine Lesley, Haseltine Lake LLP<br />
Lincoln House, 5th Floor 300 High Holborn,<br />
London WC1V 7JH, GB<br />
(62) 06729258.1 / 1 998 376<br />
H01L 29/872 → (51) H01L 27/04<br />
H01L 31/0203 → (51) C08L 83/04<br />
(51) H01L 31/0216 (11) 2 175 495 A1<br />
H01L 31/048 H01L 21/77<br />
H01L 29/786<br />
(25) En (26) En<br />
(21) 09172766.9 (22) 12.10.2009<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HR HU IE IS IT LI LT LU LV MC MK MT<br />
NL NO PL PT RO SE SI SK SM TR<br />
AL BA RS<br />
(30) 10.10.2008 JP 2008263705<br />
(54) • Abgedichtete Vorrichtung<br />
• Sealed device<br />
• Dispositif étanche<br />
(71) Fujifilm Corporation, 26-30 Nishiazabu 2chome,<br />
Minato-ku Tokyo 106-0031, JP<br />
(72) Tsukahara, Jiro, Kanagawa 258-8577, JP<br />
(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />
Arabellastrasse 4, 81925 München, DE<br />
H01L 31/0232 → (51) G02B 6/42<br />
(51) H01L 31/04 (11) 2 175 496 A1<br />
(25) Ja (26) En<br />
(21) 07790269.0 (22) 18.07.2007<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />
RO SE SI SK TR<br />
AL BA HR MK RS<br />
(86) JP 2007/000773 18.07.2007<br />
(87) WO 2009/011013 2009/04 22.01.2009
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