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Plenarvorträge - DPG-Tagungen

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Magnetismus Donnerstag<br />

MA 20.5 Do 11:15 H10<br />

Proximity effect of vanadium on spin-density wave magnetism<br />

in Cr films — •Evgeny Kravtsov 1 , Björgvin Hjörvarsson 2 ,<br />

Andreas Hoser 3 , Alexei Nefedov 1 , Florin Radu 1 , Arndt<br />

Remhof 1 , and Hartmut Zabel 1 — 1 Institut für Experimentalphysik/Festkörperphysik,<br />

Ruhr-Universisät Bochum, Bochum —<br />

2 Department of Physics, Uppsala University, Uppsala, Sweden —<br />

3 Institut für Kristallographie, RWTH-Aachen, Aachen<br />

Spin-density wave (SDW) state in thin Cr films is known to be under<br />

influence of proximity effects from neighboring layers. To date the main<br />

attention has been given to effects arising from exchange interactions at<br />

interfaces, for example, in Fe/Cr systems, and few papers are devoted to<br />

other types of boundary conditions. Here we report on a combined neutron<br />

and X-ray scattering study of proximity effects in Cr/V films where<br />

the boundary conditions are due to V-Cr hybridization at interfaces. The<br />

neutron measurements have been performed at the triple-axis spectrometer<br />

UNIDAS in Forschungszentrum Jülich, the synchrotron measurements<br />

at the ID20 beamline in ESRF. From the above experiments, we provide<br />

evidence that the V/Cr interface causes a strong and long-range influence<br />

on the SDWs behavior in Cr. The V-Cr interface hybridization changes<br />

the SDW polarisation and propagation direction as well as the SDW period.<br />

The Cr magnetic moment in Cr/V bilayers was found to decrease<br />

quasi-linearly with temperature that is not observed so far in bulk Cr<br />

and other Cr-based thin film systems. The research was supported by<br />

SFB 491 and INTAS.<br />

MA 20.6 Do 11:30 H10<br />

Thin epitaxial films of the Heusler compound Co2Cr0.6Fe0.4Al —<br />

•Gerhard Jakob 1 , Frederick Casper 1,2 , Virginie Beaumont 1,2 ,<br />

Stefan Falk 1 , Hans-Joachim Elmers 1 , and Claudia Felser 2<br />

— 1 Institut für Physik, Universität Mainz, Staudinger Weg 7, 55099<br />

Mainz — 2 Institut für Anorganische und Analytische Chemie, Universität<br />

Mainz, Düsbergweg 10-14, 55099 Mainz<br />

A tunnel magnetoresistive element has recently been reported based<br />

on thin polycrystalline films of the Heusler compound Co2Cr0.6Fe0.4Al<br />

[1]. According to band structure calculations this material is half metallic,<br />

i.e. there exists only one spin direction for the charge carriers at the<br />

Fermi edge. We prepared thin epitaxial films of this compound in the<br />

B2 structure on a-plane (1120) Al2O3 substrates by sputtering. Films<br />

grown at high temperatures (T=600 o C) are fully epitaxial with the (110)<br />

and (110) planes of the film parallel to the (1120) and (0001) planes of<br />

the substrate, respectively. The films show nearly rectangular hysteresis<br />

loops with coercitive fields of the order of 10mT. Magnetooptical Kerr<br />

measurements show an in-plane anisotropy of the magnetization with the<br />

easy axis in {001} direction. Hall measurements show a strong anomalous<br />

Hall effect and a weak normal Hall voltage signalling the existence of a<br />

compensated Fermi surface.<br />

[1] K. Inomata et al., Jpn. J. Appl. Phys. 42, L419 (2003)<br />

MA 20.7 Do 11:45 H10<br />

Spin polarization of single-crystalline Co2MnSi films grown by<br />

PLD on GaAs(001) — •W. Wang, W. Kuch, L. Chelaru, J.<br />

Wang, Y. Lu, J. Barthel, M. Przybylski, and J. Kirschner —<br />

Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle<br />

Recent theoretical calculations have shown that the full-Heusler alloy<br />

Co2MnSi is a promising candidate to be a half-metallic ferromagnet. In<br />

this contribution we report on the growth, magnetic and electronic characterization<br />

of single crystalline Co2MnSi thin films deposited by Pulsed<br />

Laser Deposition (PLD) on GaAs(001) substrates. In situ Reflection High<br />

Energy Electron Diffraction (RHEED) and Auger spectroscopy confirmed<br />

the high-quality growth (in particular at 450K growth temperatures) and<br />

stoichiometry. Spin-resolved photoemission measurements at BESSY-II<br />

of the single-crystal Co2MnSi films reveal spin-resolved density of states<br />

that are in qualitative agreement with recent band structure calculations.<br />

However, the spin polarization of photoelectrons close to the Fermi level<br />

is found to be at most 25%, in contrast to the predicted half-metallic behavior.<br />

Moreover, the magnetic moments we obtained by sum rule analysis<br />

of x-ray magnetic circular dichroism (XMCD) measurements of thin<br />

Co2MnSi films are lower in comparison to what is predicted theoretically.<br />

We suggest that these discrepancies may be attributed to a non-magnetic<br />

surface region and/or partial chemical disorder in the Co2MnSi lattice.<br />

MA 20.8 Do 12:00 H10<br />

Resonante magnetische Röntgenstreuung an Co2MnGe-<br />

Heusler-Einzelfilmen und -übergittern — •Johannes Grabis,<br />

Alexei Nefedov, Andre Bergmann, Kurt Westerholt<br />

und Hartmut Zabel — Institut für Experimentalphysik/<br />

Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum<br />

Halbmetallische, ferromagnetische Heuslerlegierungen wie Co2MnGe<br />

besitzen ein großes Anwendungspotential im Bereich von spinelektronischen<br />

Bauelementen. Gesputterte Einzelfilme und Übergitter<br />

mit Au oder V als Zwischenschicht wurden mit Hilfe des magnetischen<br />

Zirkulardichroismus (XMCD) und der resonanten magnetischen<br />

Röntgenstreuung (XRMS) im Bereich der L2,3 Kanten von Co und Mn<br />

untersucht. Während anhand der Absorptionsspektren die elemetspezifischen<br />

Beiträge zum magnetischen Spin- und Bahnmoment berechnet<br />

und die magneto-optischen Konstanten bestimmt werden können, bietet<br />

die resonante Röntgenstreuung zusätzlich eine Möglichkeit der tiefenselektiven<br />

Analyse der Schichtsysteme. Aus der spekulären Reflektivität<br />

kann ein Magnetisierungstiefenprofil gewonnen werden. Die diffuse Streuung<br />

liefert weitere Informationen über die Beschaffenheit der Grenzfläche<br />

wie Rauhigkeiten und Korrelationslängen. Dieses Projekt wird gefördert<br />

durch das BMBF, O3ZAE7BO.<br />

MA 20.9 Do 12:15 H10<br />

Magnetische Eigenschaften dünner epitaktischer Cobaltat- und<br />

Manganat-Schichten — •Thorsten Schwarz 1,2 , Oswaldo Moran<br />

1 , Dirk Fuchs 1 und Rudolf Schneider 1 — 1 Forschungszentrum<br />

Karlsruhe, Institut für Festkörperphysik, D-76021 Karlsruhe —<br />

2 Universität Karlsruhe, Fakultät für Physik, D-76128 Karlsruhe<br />

Mit abnehmender Schichtdicke beobachtet man bei Cobaltat- und<br />

Manganat-Schichten eine starke Änderung der magnetischen Eigenschaften.<br />

Ferromagnetische Schichten, La0.7A0.3CoO3 (A = Ca, Sr, Ba) und<br />

La2/3Ca1/3MnO3, zeigen beispielsweise eine starke Abnahme der Curie-<br />

Temperatur mit abnehmender Schichtdicke, was sich mit einem Skalenverhalten<br />

sehr gut beschreiben lässt. Weiterhin ist ebenfalls eine Reduktion<br />

des effektiven magnetischen Sättigungsmomentes im Vergleich<br />

zu Einkristall-Werten erkennbar. Zusätzliche Beiträge zur Anisotropie-<br />

Energie aufgrund epitaktischer Verspannungen zeigen einen starken Einfluß<br />

auf die Magnetisierungseigenschaften und könnten daher eine zentrale<br />

Rolle für dieses Verhalten spielen. Die Schichtpräparation mittels<br />

Laserablation sowie die Charakterisierung der strukturellen und<br />

magnetischen Eigenschaften mittels Röntgenbeugung und DC-SQUID-<br />

Magnetometrie werden vorgestellt und diskutiert.<br />

MA 20.10 Do 12:30 H10<br />

Sr2FeMoO6 Thin Film Preparation, Properties and Prospects<br />

— •Nicole Auth 1 , Diana Sanchez 2 , and Gerhard Jakob 1 —<br />

1 Johannes Gutenberg Universität, Mainz — 2 Instituto de Ciencia de Materiales<br />

de Madrid, CSIC<br />

Since the first report of room temperature magneto-resistance in polycrystalline<br />

Sr2MoFeO6 (SFMO) this double-perovskite material has been<br />

widely studied. Due to its high Curie temperature of 420 K and band<br />

structure calculations predicting 100% spin polarisation, SFMO is a potential<br />

candidate for spintronic devices. Yet most studies are concerned<br />

with bulk material while the preparation of good quality thin films has<br />

proven to be a non-trivial task.<br />

We prepared epitaxial thin films of SFMO on SrTiO3 (100) substrates<br />

by pulsed laser deposition. Differing from previous reports a postdeposition<br />

annealing step in vacuum with a low oxygen partial pressure<br />

was introduced. The structural, magnetic and transport properties are<br />

studied in detail. We also investigated film growth on a Ba0.4Sr0.6TiO3<br />

(BST) buffer layer and on DyScO3 substrates. Both types of seed crystals<br />

offer a nearly perfect lattice match for the formation of the SFMO<br />

thin film. While the DyScO3 substrate has a perfect c-axis orientation<br />

the BST buffer layer exhibits a large angular spread of the crystallites<br />

leading to a clear change in the magneto-transport properties.<br />

We succeeded in growing samples with comparably smooth surface as<br />

a prerequisite for multilayer preparation. For studying the TMR effect we<br />

are working on nanoscale patterning of mesa-structures by a combination<br />

of photolithography, focussed ion beam etching and e-beam lithography.

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