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Plenarvorträge - DPG-Tagungen

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Symposium Organic and Hybrid Systems for Future Electronics Donnerstag<br />

scale low-cost electronic devices has lead to intensive research. Pentacene<br />

and Diindenoperylene (DIP) thin films on SiO2 are two prominent systems<br />

due to their high structural order out-of-plane. While bottom contact<br />

FET structures can be realized easily, preparation of top contacts<br />

may involve diffusion of metal atoms (typically Au) deep into the organic<br />

film changing its electronic properties. For a better understanding of the<br />

growth process and the diffusion of noble metal atoms in crystalline organic<br />

films, a radiotracer technique has been used to obtain diffusion<br />

profiles and the condensation coefficient of noble metals for these films.<br />

The results for Pentacene and DIP films will be presented with respect<br />

to their structural properties and will be compared to polymer films.<br />

SYOH 5.23 Do 18:00 B<br />

Electronic Structure and Morphology of 7.8-Dimethylalloxazin<br />

on Ag, Au, and HOPG — •Stefan Lach and Christiane Ziegler<br />

— Erwin-Schrödinger-Str. 33 67663-Kaiserslautern<br />

Our main emphasis was put on the investigation of the electronic and<br />

structural behavior of thin films of the redox-active model substance<br />

7.8-dimethylalloxazin (DMA) on several inorganic surfaces as a prerequisite<br />

to construct organic/inorganic molecular electron transfer devices.<br />

Alloxazines are capable of building up intermolecular hydrogen-bonded<br />

complexes. The optimized structures of the monomer and several dimers<br />

were calculated (DFT). The calculated eigenvalues were used to simulate<br />

the theoretical photoelectron spectra of the monomer and the dimers.<br />

Comparison of the calculations and simulations with the measured data<br />

exhibit a small preference for a dimerization. Photoelectron spectroscopy<br />

and morphology studies of ultra thin films from DMA on polycrystalline<br />

silver and gold as well as on HOPG show distinct differences for these<br />

substrates. On HOPG and Au there is no chemical interaction. On HOPG<br />

a homogeneous, unstructured layer is formed, but on Au DMA shows island<br />

growth with large islands and deep crevices in between. On Ag a<br />

new state appears 1.2 eV below the Fermi level and smaller islands are<br />

built on the substrate. A calculation and simulation of the photoelectron<br />

spectra of a DMA/Ag-complex shows a good correspondence with the<br />

experimental results.<br />

SYOH 5.24 Do 18:00 B<br />

Orientation of phthalocyanine thin films on disordered<br />

substrates — •Heiko Peisert 1,2 , Indro Biswas 1 , Torsten<br />

Schwieger 2 , Martin Knupfer 2 , Andreas Petr 2 , Lothar<br />

Dunsch 2 , Danilo Dini 3 , Michael Hanack 3 , and Thomas Chasse 1<br />

— 1 University of Tuebingen, IPC, Auf der Morgenstelle 8, 72076<br />

Tuebingen, Germany — 2 Leibniz Institute for Solid State Research<br />

Dresden, P.O. Box 270116, D-01171 Dresden, Germany — 3 University<br />

of Tuebingen, Inst. Organ. Chem., Auf der Morgenstelle 18, D-72076<br />

Tuebingen, Germany<br />

We have studied the molecular orientation of fluorinated metallophthalocyanines<br />

(CuPCFx with x = 0, 4, 16), and of tetra tert-butyl magnesium<br />

phthalocyanine (MgPC(t-bu)4) on technically relevant organic<br />

and inorganic substrates using polarisation-dependent x-ray absorption<br />

spectroscopy. As organic substrate a mixture of poly-3,4-ethylenedioxythiophene<br />

(PEDOT) and polystyrenesulfonate (PSS) was chosen, often<br />

applied as electrode material in (all-)organic semiconductor devices. Although<br />

we observe a chemical interaction at the PC/PEDOT:PSS interface<br />

and a diffusion of Pc molecules into the polymer film [1], CuPcFx<br />

grows in an ordered, ”standing” geometry on this substrate.<br />

The tert-butyl metallophthalocyanines are highly soluble and thus they<br />

are especially suitable for solution processed organic semiconductor thin<br />

films. On polycrystalline gold evaporated MgPc(t-bu)4 molecules are as<br />

highly ordered as CuPC. However, on Au(100) we observe a very high<br />

orientation (the molecules lie) only for (sub-) monolayer coverages.<br />

[1] H. Peisert et al. Appl. Phys. Lett. 83 (2003) 3930<br />

SYOH 5.25 Do 18:00 B<br />

Intermolecular Interactions in Thin Films of Subphthalocyanines<br />

— •Christine Mattheus 1 , Wilfried Michaelis 1,2 , Dieter<br />

Wöhrle 2 , and Derck Schlettwein 1 — 1 Physical Chemistry 1, University<br />

of Oldenburg, Germany — 2 Institute of Organic and Macromolecular<br />

Chemistry, University of Bremen, Germany<br />

Thin films of SubphthalocyaninatoChloroBoron (SubPc) and its Fluorinated<br />

Derivative (F12SubPc) have been prepared by physical vapour<br />

deposition on NaCl, KBr, mica and glass. The intermolecular coupling<br />

was studied in situ by UV- vis absorption spectroscopy and the structure<br />

of the films was studied by X- ray diffraction (XRD). During deposition<br />

of SubPc at 298 K optical spectra were obtained that were quite simi-<br />

lar to spectra of the molecules in solution indicating negligible specific<br />

intermolecular coupling in the films. After heating or during deposition<br />

on heated substrates a spectral change was observed speaking for an<br />

increased coupling in the films. The increased coupling of molecules in<br />

annealed films led to an X- ray diffraction pattern of the films consistent<br />

with the bulk crystal structure. The relative intensity in XRD shows<br />

a preferential orientation of crystals with the ab-plane parallel to the<br />

surface caused by an orientation of the molecules with their B-Cl axis<br />

perpendicular to the surface and with their aromatic cone parallel to it.<br />

As an additional parameter, the influence of fluorination on the growth<br />

characteristics was also studied.<br />

SYOH 5.26 Do 18:00 B<br />

VUV-Spectroscopic Ellipsometry Investigations of DNA Base<br />

Layers Deposited onto H-Si(111) Surfaces — •S. D. Silaghi 1 ,<br />

Yu J. Suzuki 1 , O. D. Gordan 1 , C. Himcinschi 1 , G. Salvan 1 ,<br />

M. Friedrich 1 , T. U. Kampen 1 , D. R. T. Zahn 1 , C. Cobet 2 , N.<br />

Esser 2 , W. Richter 2 , and W. Braun 3 — 1 Institut für Physik, TU<br />

Chemnitz, 09107 Chemnitz, Germany — 2 Institut für Festkörperphysik,<br />

TU Berlin, 10623 Berlin, Germany — 3 BESSY GmbH, 12489 Berlin-<br />

Adlerhof, Germany<br />

DNA bases (adenine, guanine, thymine, cytosine) have electronic properties<br />

comparable to wide-gap semiconductors thus being promising candidates<br />

for hybrid organic/silicon electronics. Vacuum Ultraviolet Spectroscopic<br />

Ellipsometry (VUV-SE) was applied for the in situ optical characterization<br />

of DNA base layers grown by organic molecular beam deposition<br />

onto H-Si(111) under ultra-high vacuum conditions. VUV-SE<br />

measurements were performed with a rotating analyzer-type ellipsometer<br />

using synchrotron radiation as a light source. The spectra were recorded<br />

at an incidence angle of about 68 o in the energy range from 2.5 to 10<br />

eV. Additionally the samples were investigated ex situ using a variable<br />

angle spectroscopic ellipsometer in the energy range from 0.8 to 5 eV.<br />

The dielectric functions of the DNA base layers were determined in the<br />

whole energy range.<br />

SYOH 5.27 Do 18:00 B<br />

Spectroscopic ellipsometric characterization of organic films deposited<br />

via Organic Vapor Phase Deposition — •C. Himcinschi 1 ,<br />

N. Meyer 2 , S. Hartmann 3 , M. Friedrich 1 , G. Strauch 2 , W.<br />

Kowalsky 3 , M. Heuken 2 , and D.R.T. Zahn 1 — 1 Halbleiterphysik,<br />

Technische Universität Chemnitz, Reichenhainerstr. 70, D-09107 Chemnitz,<br />

Germany — 2 AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen,<br />

Germany — 3 Institut für Hochfrequenztechnik, Technische Universität<br />

Braunschweig, Schleinitzstr. 22, D-38106 Braunschweig, Germany<br />

Thin films of Tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) and<br />

N,N ′ -[Di-(1-naphthyl)-N,N ′ -diphenyl]-(1,1 ′ -biphenyl )-4,4 ′ -diamine<br />

(α-NPD) were deposited onto 8” Si substrate by Organic Vapor Phase<br />

Deposition. The thickness analysis by Variable Angle Spectroscopic<br />

Ellipsometry revealed very uniform films with minor edge effects that<br />

originate from the distortion of the flow profile in the vicinity of the<br />

wafer edges. However, even including these effects the standard deviation<br />

for the thickness considering 21 points along one sample diameter is<br />

below 1 nm in all cases.<br />

The refractive indices and extinction coefficients of Alq3 and α-NPD<br />

were determined from ellipsometry in the spectral range from 0.8 eV<br />

up to 5 eV. These optical constants were derived using a multi-sample<br />

analysis approach that employs simultaneous point-by-point fitting of ellipsometric<br />

spectra recorded for samples with different thicknesses of the<br />

organic layer.<br />

SYOH 5.28 Do 18:00 B<br />

Determination of the Anisotropic Optical Properties for Perfluorinated<br />

Vanadyl Phthalocyanine Thin Films — •O. D. Gordan<br />

1 , M. Friedrich 1 , W. Michaelis 2 , R. Kr öger 3 , T. Kampen 1 ,<br />

D. Schlettwein 2 , and D. R. T. Zahn 1 — 1 Institute of Physics, University<br />

of Technology Chemnitz, — 2 Physical Chemistry 1, Institute of<br />

Pure and Applied Chemistry, — 3 Institute of Solid State Physics, University<br />

of Bremen, D-28334<br />

Thin films of perfluorinated vanadyl phthalocyanine F16PcVO were<br />

prepared by physical vapor deposition (PVD) in high vacuum on fused silica<br />

and KBr substrates. The absorption spectra in the visible region show<br />

that the films on different substrates have different structure. The optical<br />

constants for F16PcVO films were obtained in the spectral range of 0.7<br />

- 4.5 eV from the simulation of ellipsometry spectra with an anisotropic<br />

uniaxial model. From the difference between the in-plane and out-of-

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