Plenarvorträge - DPG-Tagungen
Plenarvorträge - DPG-Tagungen
Plenarvorträge - DPG-Tagungen
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Tiefe Temperaturen Dienstag<br />
H. Schoeller, and G. Schön, Phys. Rev. Lett. 78, 4482 (1997)<br />
[2] R. Schäfer et al., cond-mat/0205223; K. W. Lehnert et al., Phys. Rev.<br />
Lett. 91, 106801 (2003).<br />
TT 11.2 Di 09:45 H19<br />
The Coulomb blockade in two island systems with high conductive<br />
junctions — •Roland Schäfer, Bernhard Limbach, Peter<br />
vom Stein, and Christoph Wallisser — Forschungszentrum Karlsruhe,<br />
Institut für Festkörperphysik, Postfach 3640, 76021 Karlsruhe<br />
We report measurements on single electron pumps consisting of two<br />
metallic islands formed by three tunnel junctions in a row. We focus<br />
on the linear response conductance as a function of gate voltages<br />
and temperature of three samples with varying system parameters. In<br />
all cases strong quantum fluctuation phenomena are observed by a<br />
log (kBT/(2Eco))-reduction of the maximal conductance where Eco measures<br />
the coupling strength between the islands. The samples display<br />
a rich phenomenology culminating in a non-monotonic behavior of the<br />
maximal conductance as a function of temperature.<br />
TT 11.3 Di 10:00 H19<br />
Coulomb blockade and Non-Fermi-liquid behavior in quantum<br />
dots — •Frithjof Anders 1 , Eran Lebanon 2 , and Avraham<br />
Schiller 2 — 1 Insititut für Theoretische Physik, Universität Bremen,<br />
Postfach 330 440, D-28334 Bremen — 2 Racah Institute of Physics, The<br />
Hebrew University, Jerusalem 91904, Israel<br />
The non-Fermi-liquid properties of an ultrasmall quantum dot coupled<br />
to a lead and to a quantum box are investigated using a new variant of<br />
Wilson’s numerical renormalization group. Below the charging energy of<br />
the quantum box, a second screening channel is dynamically generated.<br />
Tuning the ratio of the tunneling amplitudes to the lead and box, we<br />
find a two-channel Kondo fixed point for arbitrary Coulomb repulsion on<br />
the dot, proving that the two-channel Kondo effect is far more generic<br />
to this setting than the original scenario of Oreg and Goldhaber-Gordon.<br />
At T = 0, a step-like structure is found in the conductance of a twolead<br />
setting, the height of which depends on the dot occupancy. The<br />
temperature scale below which the two-channel Kondo effect sets in is<br />
greatly enhanced away from the local-moment regime, making this effect<br />
accessible in realistic devices.<br />
TT 11.4 Di 10:15 H19<br />
Thermopower of metallic single electron devices — •Marko<br />
Turek, Jens Siewert, and Klaus Richter — Institut für theoretische<br />
Physik, Universität Regensburg, D-93040 Regensburg<br />
While charge transport in single-electron devices has been thoroughly<br />
investigated during the past decade, heat transport did not attract much<br />
attention, apart from basic considerations, e.g. [1 − 3]. This is surprising<br />
since heat transport exhibits interesting behavior as a function of<br />
external gate voltages and, in particular, renders transport regimes accessible<br />
which are difficult to study by means of charge transport. Here<br />
we present new results for the linear thermopower as a function of the<br />
applied gate voltage in single-electron transistors with normal leads and<br />
normal-conducting islands, as well as for devices with superconducting<br />
islands.<br />
[1] C. W. J. Beenakker and A. A. M. Staring, Phys. Rev. B 46, 9667<br />
(1992)<br />
[2] Y. M. Blanter, C. Bruder, R. Fazio and H. Schoeller, Phys. Rev. B 55,<br />
4069 (1997)<br />
[3] D. Boese and R. Fazio, Europhys. Lett. 56, 576 (2001)<br />
TT 11.5 Di 10:30 H19<br />
Weak charge quantization and full current statistics — •Dmitry<br />
Bagrets 1 and Yuli Nazarov 2 — 1 Institut für Theoretische<br />
Festkörperphysik, Universität Karlsruhe, D-76128 Karlsruhe, Germany<br />
— 2 Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The<br />
Netherlands<br />
We evaluate the full statistics of the current via a Coulomb island that<br />
is strongly coupled to the leads [1]. This strong coupling weakens the<br />
Coulomb interaction. We show that at voltages below the inverse RCtime<br />
in the circuit all effects of interaction can be incorporated into the<br />
energy renormalization of transmission eigenvalues of the arbitrary scatterers<br />
that connect the island and the leads. At moderate conductance<br />
G of the island below some critical value Gc the above renormalization<br />
results in the onset of an effective Coulomb blockade gap in the currentvoltage<br />
dependence, the value of this gap being exponentially suppressed<br />
as compared to the classical charging energy E = e 2 /2C of the island.<br />
In the opposite case, G > Gc, the Coulomb blockade does not develop<br />
and the interaction correction to transport saturates at low voltages below<br />
the Thouless energy of the island. Remarkably, our renormalization<br />
group approach agrees with the previous equilibrium instanton calculations<br />
[2], i.e. both methods give the same energy scale for the effective<br />
charging energy.<br />
[1] D.A. Bagrets and Yu. V. Nazarov, cond-matt/0304347<br />
[2] Yuli V. Nazarov, Phys. Rev. Lett. 82, 1245 (1999).<br />
TT 11.6 Di 10:45 H19<br />
Negative differential resistance due to the resonance coupling of<br />
a quantum-dot dimer — •Shidong Wang 1,2 , Zouzou Sun 1 , Nelson<br />
Cue 1 , and Xiangrong Wang 1 — 1 Department of Physics, Hong<br />
Kong University of science and technolgy, HKSAR, China — 2 Institut<br />
für Theoretische Physik, Universität Regensburg, 93040 Regensburg<br />
We investigate the electron tunneling through a coupled quantum-dot<br />
dimer (a two quantum-dot system) under a dc bias. We find a new mechanism<br />
for the negative differential resistance (NDR) in a system with more<br />
than one quantum dots. We show that a peak in the I-V curves, that is,<br />
a NDR, occurs at low temperature when two discrete electronic states in<br />
the two quantum dots are aligned with each other. We call this coupling<br />
of two states the resonance coupling. We study also the dependence of<br />
the height and width of the I-V peak on the dot-dot coupling, e-e interaction,<br />
and the temperature. We find that the peak disappears due to<br />
thermal smearing effects at high temperature. We expect that this new<br />
NDR is useful in STM experiments. We hope that a better understanding<br />
of this resonance coupling effect may enhance the STM as a powerful<br />
probe not just for a regular surface, but also for a cluster structure.<br />
TT 11.7 Di 11:00 H19<br />
Nonlinear Transport through Quantum Wires: Functional<br />
Renormalization Group in Nonequilibrium — •Severin<br />
Jakobs 1 , Volker Meden 2 , Herbert Schoeller 1 , and Kurt<br />
Schönhammer 2 — 1 Institut für theoretische Physik A, RWTH Aachen,<br />
D-52056 Aachen, Germany — 2 Institut für Theoretische Physik,<br />
Universität Göttingen, Bunsenstr. 9, D-37073 Göttingen, Germany<br />
We study nonlinear transport at finite temperature through a quantum<br />
wire with impurities. The wire is modelled by a one-dimensional<br />
quantum lattice including nearest neighbour interaction. It is coupled<br />
via tunneling barriers to two reservoirs to which a finite bias voltage is<br />
applied. For calculating the nonequilibrium properties we generalize a<br />
functional renormalization group method (applied recently to the equilibrium<br />
case [1]) to the nonequilibrium situation by utilizing real-time<br />
Feynman diagrams. This enables us to handle weak as well as strong tunneling<br />
and arbitrary potentials on the wire. The coulomb interaction is<br />
treated within perturbative renormalization group, i.e. only the Hartree-<br />
Fock type of diagrams are included. For a single impurity in an infinite<br />
quantum wire we recover the exponents for the current vs. temperature<br />
and for the current vs. bias voltage predicted from bosonization [2]. For<br />
a finite wire however, the interplay of tunneling barriers and impurity<br />
produces exponents depending on the position of the impurity.<br />
[1] V.Meden et al., Phys.Rev.B 65, 045318 (2002)<br />
[2] C.L.Kane, M.P.A.Fisher, Phys.Rev.B 46, 15233 (1992)<br />
TT 11.8 Di 11:15 H19<br />
Electron transport through interacting quantum dots —<br />
•Andrei Zaikin 1 and Dmitri Golubev 1,2 — 1 Institut ür Nanotechnologie,<br />
Forschungszentrum Karlsruhe, 76021 Karlsruhe — 2 Institut für<br />
Theoretische Festkörperphysik, Universität Karlsruhe, 76128 Karlsruhe<br />
We present a detailed theoretical investigation of the effect of Coulomb<br />
interactions on electron transport through quantum dots and double<br />
barrier structures connected to a voltage source via an arbitrary linear<br />
impedance. Combining real-time path integral techniques with the scattering<br />
matrix approach we derive the effective action and evaluate the<br />
current-voltage characteristics of quantum dots with large conductances.<br />
Our analysis reveals a reach variety of different regimes which we specify<br />
in detail for the case of chaotic quantum dots. At sufficiently low energies<br />
the interaction correction to the current depends logarithmically on<br />
temperature and voltage. We identify two different logarithmic regimes<br />
with the crossover between them occurring at energies of order of the<br />
inverse dwell time of electrons in the dot. We also analyze the frequencydependent<br />
shot noise in chaotic quantum dots and elucidate its direct<br />
relation to interaction effects in mesoscopic electron transport.