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Symposium Organic and Hybrid Systems for Future Electronics Donnerstag electrodes sorting the acceptor and donor block to the respective electrode. The experimental results discussed in terms of spectrally resolved external quantum efficiency with respect to electrode spacings between 100 nm and 10 um were obtained from interdigitated electrodes patterned by electron beam lithography and nanoimprint lithography. They were covered with the conjugated block copolymer polyfluorene/polyaniline (PF/PANI) as a model system for photovoltaic applications. This work is supported by the Volkswagen Stiftung (I/77 721). SYOH 5.48 Do 18:00 B Silicon - organic pigment material hybrids for photovoltaic application — •Thomas Mayer 1 , Ulrich Weiler 1 , Wolfram Jaegermann 1 , Derck Schlettwein 2 , Dieter Wöhrle 3 , and Marinus Kunst 4 — 1 Technische Universität Darmstadt, FB Material-und Geowissenschaften, FG Oberfächenforschung — 2 Universität Oldenburg, Physikalische Chemie 1 — 3 Universität Bremen, Institut für Organische und Makromolekulare Chemie — 4 Hahn-Meitner Institut Berlin, Abt. Solare Energetik We are running a project that is focussed on the development of siliconorganic pigment hybrid materials for thin film solar cell application. High conversion efficiency is expected from a combination of the advantages of organic dyes for light absorption and of silicon for charge carrier separation and transport. The project team, wants to find suitable dyes and deposition conditions for the preparation of photovoltaic hybrid materials. The composite will be prepared by (remote) hot wire chemical vapour deposition of silicon and co-sublimation of organic dye molecules. Pigments are synthesized and specifically modified to allow for injection of photo-excited charge carriers from dye orbitals to silicon bands. The basic idea of the concept of bulk hybrid materials for photovoltaic application will be introduced. As model experiments dye-Si and Si-dye layers have been grown and characterized by photoelectron spectroscopy, Raman spectroscopy and Time Resolved Microwave Conductivity. The results will exemplify the strategy to challenge the task of producing a new inorganic-organic functional composite material in view of photovoltaic applications. SYOH 5.49 Do 18:00 B Photophysical properties of annealed polyhexylthiophen:fullerene composites — •Michael Pientka, Dana Chirvase, and Vladimir Dyakonov — Institute of Physics, University of Oldenburg, 26111 Oldenburg, Germany Composites of polyhexylthiophen and methanofullerene (PCBM) are promising for polymer photovoltaics. External quantum efficiences above 70% and power conversion efficiences above 3% were demonstated recently. Decisive step to achieve such high values is a thermal annealing, strongly improving the electrical performance. The exact nature of this effect is still under discussion. We apply photoinduced absorption, light induced electron spin resonance and photoluminescence spectroscopy for the investigation of the photogenerated states and their transformation upon annealing. The heat treatment leads to a number of effects: increase of the photoluminescence previously suppressed, energy shift of polaronic absorption band together with a strong increase in the density of charge separated states. The changes observed are discussed in terms of variation of nanomorphology in polymer-fullerene blends, as supported by AFM, and are related to device performance. SYOH 5.50 Do 18:00 B High efficiency charge carrier generation and recombination free charge carrier transport in polymer-fullerene bulk heterojunction devices — •Vladimir Dyakonov 1 , Ingo Riedel 1 , Pavel Schilinsky 1,2 , Christoph Waldauf 1,2 , and Christoph Brabec 2 — 1 Energy- and Semiconductor Research Laboratory, Institute of Physics, University of Oldenburg, D-26111 Oldenburg, Germany — 2 Siemens AG, Innovative Electronics,CTMM1-L2P, Paul-Gossen-Strasse 100, D-91052 Erlangen, Germany We present experimental evidences for the efficient photogeneration of charge carriers in photovoltaic conjugated polymer-fullerene blends followed by the recombination-free charge carrier transport through the semiconductor layer. From the incident photon conversion efficiency exceeding 70%, an internal quantum efficiency of close to 100% was calculated, indicating high potential of these materials for solar cell applications. We demonstrate that by increasing the active layer thickness (up to 350 nm) without significant decrease of internal quantum efficiency, high short-circuit photocurrent densities (JSC) of 15 mA/cm 2 can be achieved. The temperature dependence of the photocurrent generally reflects the charge carrier transport losses in the device under test. Being thermally activated at low temperatures, the JSC saturates and becomes nearly temperature independent above T=260 K, indicating that the charge carriers traverse the active layer without being influenced by the semiconductor’s transport properties. The corresponding high value of the mobility-lifetime product µτ provides therefore a basis to design solar cells with thick absorber layers able to overcome transport limitations. SYOH 5.51 Do 18:00 B Bulk heterojunction solar cells from low bandgap polymer and PCBM — •Martin Knipper 1 , Anja Henckens 2 , Laurence Lutsen 2 , Jean Manca 2 , and Dirk Vanderzande 2 — 1 Energy- and Semiconductor Research Laboratory, Institut of Physics, University of Oldenburg, D26111 Oldenburg, Germany — 2 Limburgs Universitair Centrum, Department SBG/SCH universitaire campus D, B3590 Diepenbeek, Belgium Low bandgap bulk heterojunction solar cells were made from a precursor polymer mixed with [6,6]-phenyl C61-butyric acid methyl ester (PCBM). This mixture is spincoated onto an indiumtinoxid (ITO) substrate covered with PEDOT:PSS. The conversion in film to the conducting low band gap (1.4 eV) polymer polythienylenevinylene (PTV) is made by heat treatment. Finally lithiumfluoride (LiF) and aluminum contacts were thermally evaporated. JV-characteristics under 1.5 AM illumination (100mW/cm 2 ) are taken at room temperature after the evaporation and several times after post production heat treatments. We see an high increase in solar cell performance with the post production treatment. All main solar cell parameters (open-circuit voltage, short-circuit current density and fillig factor) increase. By varying the weight concentration of PCBM with respect to the precursor PTV we found an optimal ratio around 1:1. With these conditions and without further optimisation we get a solar cell efficiency of 0.63%. SYOH 5.52 Do 18:00 B Photodegradation of organic films and organic solar cells — •O. Schulz 1 , M. Spode 1 , G. Ecke 1 , J. Uziel 1 , W. Schliefke 1 , M. Al-Ibrahim 1 , O. Ambacher 1 , D. Raabe 2 , M. Helbig 2 , L. Carta- Abelmann 3 , P. Scharff 3 , U. Zhokhavets 4 , T. Erb 4 , and G. Gobsch 4 — 1 TU Ilmenau, Center for Micro- und Nanotechnologies, D-98693 Ilmenau, Germany — 2 SurA Chemicals GmbH, D-07745 Jena, Germany — 3 TU Ilmenau, Chemistry, D-98693 Ilmenau, Germany — 4 TU Ilmenau, Experimental Physics I, D-98693 Ilmenau, Germany For the application of organic solar cells a high electronic and structural stability is of fundamental importance in addition to a high conversion efficiency. Photovoltaic devices with active layers based on polymers as poly-3 hexylthiophene(P3HT) and tetraphenyl-biphenyldiamindiphenylxylylene(TPD-DPX) show a significant degradation of optoelectronic properties under AM1.5 illumination. For instance the short circuit current density of a P3HT based solar cell decreases under the influence of light(60 mW/cm 2 ) within 2 minutes by 50 %. Polymer films of 30 - 200 nm thickness are produced by spin-coating. The electrical, optical and structural parameters of the generated organic devices are investigated with regard to the dependency of the photodegradation effects on ambient parameters. These parameters are oxygen pressure, temperature and light intensity. The photodegradation process is analysed by measurements of current-voltage curves, spectral resolved photoconductivity, spectral resolved ellipsometry, atomic force microscopy and Auger electron spectroscopy. SYOH 5.53 Do 18:00 B Dielectric spectroscopy of the photovoltaic cell formed by di-(pyridyl)-perylenetetracarboxylic diimide and copper phthalocyanine — •Grazyna Jarosz 1 , Ryszard Signerski 2 , Jan Godlewski 2 , Paul David Quinn 1 , Niels Stephan 1 , and Ludwig Brehmer 1 — 1 Condensed Matter Physics, Institute of Physics, University — 2 Department of Applied Physics and Mathematics, Gdansk Dielectric spectroscopy is one of the major techniques applied in the investigation of Schottky barriers or p-n junctions due to dielectric phenomena which arise between metal-semiconductor and semiconductorsemiconductor interfaces. Indeed, it provides us with important information such as the depletion-layer capacitance, the diffusion capacitance and the series and parallel resistance which are particularly important in the investigation of the various processes determining the DC response of a device. However, in the case of organic solar cells this method has been not widely applied despite the increasing interest in these types of
Symposium Organic and Hybrid Systems for Future Electronics Donnerstag devices. Our work will present dielectric spectra of organic heterojunctions formed by di-(pyridyl)-perylenetetracarboxylic diimide (Py-PTC) and copper phthalocyanine (CuPc). This organic junction exhibits a photovoltaic effect with effective photogeneration of charge carriers occuring near the Py-PTC/CuPc interface. The main processes determining the heterojunction performance will be discussed. Acknowledgement: The work was supported by Marie-Curie Host Fellowships: Project MODERN No.HPMD-CT-2001-00083 and by KBN: Project No.4T11B 057 22. SYOH 5.54 Do 18:00 B An impedance spectroscopy study of Ag/PTCDA/n-GaAs(100) heterostructures — •A. Bekkali, I. Thurzo, T. U. Kampen und D. R. T. Zahn — Insitut für Physik, TU Chemnitz, D-09107 Chemnitz In this work impedance spectroscopy (IS) was applied to investigate Ag/PTCDA/n-GaAs(100) heterostructures. Describing the samples using an equivalent circuit consisting of resistors and capacitors, the potential drop across each relevant area of the sample, that is, the GaAs and PTCDA bulk as well as the Ag/PTCDA and PTCDA/GaAs interface, can be determined. The IS characteristics can be simulated by modeling the Ag/PTCDA interface using a parallel RoCo circuit connected in series with a bulk resistance Rb for the PTCDA layer. All the elements are found to be nonlinear with respect to the applied bias and frequency independent. The depletion layer in GaAs is correctly characterized by its parallel resistance Rd and capacitance Cd. The most important feature of the Ag/PTCDA interface is the capacitance Co, which consists of a geometric capacitance and an excess capacitance δC, the latter originating from recharging a Gaussian density of states (DOS). This Gaussian DOS is attributed to surface states Nss(E), their respective capacitance δCss(E) = q 2 Nss(E) peaking for an applied bias of 0.2 V. This value agrees with the thermal activation energy for carrier transport in the PTCDA layer. SYOH 5.55 Do 18:00 B Characterization of polymeric metal-insulator-semiconductor diodes — •Silviu Grecu, Markus Bronner, Andreas Opitz, and Wolfgang Brütting — Experimentalphysik IV, Universität Augsburg, 86135 Augsburg, Germany Metal-insulator-semiconductor (MIS) diodes are the two-terminal pendants of thin film transistors sharing the same basic layer structure. However, instead of the current-voltage characteristics one has to study the capacitance-frequency and capacitance-voltage behavior, which can give information about mobile charges and trapping processes in these devices. We have investigated MIS structures based on poly(alkyl-thiophene) as semiconductor which were fabricated on glass substrates with polymeric insulator layers and compared their response to devices fabricated on Si/SiO2 substrates. From capacitance-voltage measurements the acceptor dopant concentration is determined for different preparation conditions. Typically these measurements show hysteresis between forward and reverse bias sweeps. We have investigated this behavior as a function of external parameters like sweep speed and temperature and discuss their possible origin. The analysis of the frequency response using appropriate equivalent circuits allows the extraction of material parameters, like conductivity and charge carrier mobility, which are compared to data obtained on thin film transistor structures. SYOH 5.56 Do 18:00 B Charge injection into thin fullerene films — •Elizabeth von Hauff, Vladimir Dyakonov, Jürgen Parisi, and Zivayi Chiguvare — Energy and Semiconductor Research Laboratory, Institute of Physics, University of Oldenburg, D-26129, Oldenburg, Germany In this study, charge injection currents into thin film fullerene diodes composed of a thin film of PCBM sandwiched between a metal and an ITO (indium tin oxide) electrode. Decreasing the thickness of the semiconductor layer in the diodes results in a transition from bulk limited to injection limited currents. From the injection limited currents through the thin film fullerene diodes, parameters describing the energy barrier between metal and semiconductor, the transport level within the bulk, and the activation energy could be calculated according to an already existing hopping model. The model describes charge carriers being injected from the metal into energy sites in the semiconductor medium distributed in a Gaussian density of states. The barrier height experienced by the charge carriers described by the above model was compared to a value calculated earlier from the Fowler-Nordheim model for quantum mechanical tunneling. In an attempt to shed more light on the metal/semiconductor interface, the fullerene diodes were futher investigated via capacitance- voltage measurements. SYOH 5.57 Do 18:00 B Quantum transport through carbon-based nanojunctions — •Miriam del Valle 1,2 , Carlos Tejedor 1 , and Gianaurelio Cuniberti 2 — 1 Dpto. Física Teórica de la Materia Condensada, UAM, Spain — 2 Institut für Theoretische Physik, Universität Regensburg We present a quantum transport study of two- and three-terminal carbon nanotube (CNT) based junctions. We concentrate our analysis on functionalized and recapped zig-zag CNTs exhibiting peculiar surface electronic states localized at the zig-zag cut and at the cap defect atoms respectively. We calculate the linear conductance by means of the Green function technique, within a π-orbital description of the carbon network, and show the interplay between these peculiar localized states and the open transport channels through the device. In correspondence of the energies of the localized states, the conductance behavior shows a Fanolike resonance. Possible experimental conditions and setup in which such effect could be detected are also discussed. SYOH 5.58 Do 18:00 B Electron Transport in Carbon Nanotube-Metal Systems: Contact Effects — •Rafael Gutierrez 1 , Nitesh Ranjan 2 , Stefan Krompiewski 3 , and Gianaurelio Cuniberti 1 — 1 Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany — 2 Institute for Physical-Chemistry and Electrochemistry,Technical University Dresden, 01062 Dresden, Germany — 3 Institute of Molecular Physics, Polish Academy of Sciences,PL-60179 Poznan, Poland Carbon nanotubes (CNT) posses a very large application potential in the rapid developing field of molecular electronics. Infinite single-wall metallic CNTs have theoretically a conductance of 2×G0, (G0 = 2e2) be- h cause of the two electronic bands crossing the Fermi level. For finite size CNTs experiments have shown that other values are also possible, indicating a very strong influence of the contacts. We study electron transport in single- and double-wall CNTs contacted to metallic electrodes with a fcc(111) surface within the Landauer transport formalism combined with Green function techniques. The electronic structure of the CNTs is described with a simple π-orbital model.We show that the symmetry of the contact region may lead in some cases to blocking of one of the transport channels reducing the conductance to 1×G0 for single-wall CNTs. In the case of double-wall systems with both inner and outer shells being metallic, non-diagonal selfenergy contributions from the electrodes may induce mixing of the CNT’s channels, again reducing the conductance from the theoretically expected value (4×G0). Finally, we discuss the influence of inter-wall interactions on the conductance. SYOH 5.59 Do 18:00 B Nonequilibrium-Transport through Metallic Point Contacts and Single-Molecule Junctions — •Fabian Pauly 1 , J. Heurich 1 , J.C. Cuevas 1 , W. Wenzel 2 , and Gerd Schön 1,2 — 1 Institut für Theoretische Festkörperphysik, Universität Karlsruhe, 76128 Karlsruhe, Germany — 2 Institut für Nanotechnologie, Forschungszentrum Karlsruhe, 76021 Karlsruhe, Germany The future of molecular electronics depends crucially on our understanding of the transport mechanism in single-molecule junctions. From the theoretical point of view an important problem, not yet fully solved, is the way of dealing with the high voltage applied in the experiments. Building upon traditional quantum-chemistry density functional calculations, we extend our method [1,2] to compute ab initio current-voltage characteristics of molecular devices. We show our first results on the bias-dependent conductance of metallic point contacts, illustrating the predictive power of the developed method. [1] J. Heurich, J.C. Cuevas, W. Wenzel, G. Schön, Phys. Rev. Lett. 88, 256803 (2002) [2] J.C. Cuevas, J. Heurich, F. Pauly, W. Wenzel, G. Schön, Nanotechnology 14 (2003) SYOH 5.60 Do 18:00 B Transport properties of [2,2]-paracyclophane thin films — •Bruno Gompf 1 , Wenping Hu 1 , Martin Dressel 1 , Jens Pflaum 2 , and Dieter Schweitzer 2 — 1 1. Physikalisches Institut, Universität Stuttgart — 2 3. Physikalisches Institut, Universität Stuttgart The transport properties of [2,2]-paracyclophane thin films prepared by molecular beam epitaxy were studied by space charged limited current measurements. This organic semiconductor, which has a three dimen-
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Page 437 and 438:
Arbeitskreis Biologische Physik Don
Page 439 and 440:
Arbeitskreis Biologische Physik Fre
Page 441 and 442:
Page 443 and 444:
Page 445 and 446:
Page 447 and 448: Arbeitskreis Biologische Physik Fre
Page 459 and 460: Arbeitskreis Physik sozio-ökonomis
Page 467 and 468: Symposium Fat-Tail Distributions -
Page 469 and 470: Symposium Life Sciences on the Nano
Page 483 and 484: Symposium Non-Fermi Liquids in Quan
Page 485 and 486: Symposium Functional Nanoparticles
Page 487 and 488: Symposium Organic and Hybrid System
Page 497: Symposium Organic and Hybrid System
Page 507 and 508: Symposium Physics of Foams Mittwoch
Page 509 and 510: Symposium Physics of Foams Mittwoch
Page 511 and 512: Symposium Quantum Shot Noise in Nan
Page 513 and 514: Symposium X-RAY Magneto-Optics Tage
Page 515 and 516: Symposium X-RAY Magneto-Optics Dien
Page 517 and 518: Lehrertage Regensburg Hauptvorträg
Page 519 and 520: A. D., Mirlin .................HL 1
Page 521 and 522: Breidenbach, Boris ........ AKB 50.
Page 523 and 524: Elli, Alexandra .............SYLS 3
Page 525 and 526: Greer, Lindsay ......... M 9.1, M 1
Page 527 and 528: Horn-von Hoegen, M. O 13.2, O 14.40
Page 529 and 530: Korn, Tobias ...............MA 13.6
Page 531 and 532: Martin, Tobias ............. MA 13.
Page 533 and 534: Partyka, Ewa ................ M 18.
Page 535 and 536: Rugeramigabo, Eddy Patrick O 14.38,
Page 537 and 538: Sihler, J. .................... DS
Page 539 and 540: Volz, K. .................... HL 44
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