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Plenarvorträge - DPG-Tagungen

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Oberflächenphysik Donnerstag<br />

The growth morphology of CoO films deposited in the temperature<br />

range of 300-500 K has been studied by Spot Profile Analysis of Low<br />

Energy Electron Diffraction (SPA-LEED). At a coverage of 3 ML the<br />

growth is pseudomorphic to the Ag(100) substrate with a compression of<br />

4% in the CoO film. Relaxation to the bulk lattice of CoO occurs at a<br />

O 35 Hauptvortrag Bauer<br />

coverage of 6 ML. At 10 ML, splitting of the (00) spot indicates the presence<br />

of terraces which we relate to the carpet growth mode of the film.<br />

Upon annealing in O2 at 500 K, both CoO(100) and CoO(111) structures<br />

were found, whereby the (111) structure shows a ( √ 3 × √ 3)R30 ◦<br />

reconstruction. The corresponding structural model will be presented.<br />

Zeit: Donnerstag 14:00–14:45 Raum: H36<br />

Hauptvortrag O 35.1 Do 14:00 H36<br />

Femtosecond ultraviolet photoelectron spectroscopy for the<br />

study of ultrafast surface processes — •Michael Bauer — Fachbereich<br />

Physik, TU Kaiserslautern, 67663 Kaiserslautern, Deutschland<br />

The technique of ultraviolet photoelectron spectroscopy allows detailed<br />

insights into static properties of molecular adsorption such as bond character,<br />

adsorption geometry or intermolecular interaction.<br />

In combination with an optical pump-probe scheme this technique can<br />

in principle also be used to monitor changes in the adsorbate state on a<br />

femtosecond time-scale and, in consequence, the evolution of the chemical<br />

O 36 Hauptvortrag Weinelt<br />

surface state during the course of a chemical reaction. This has become<br />

possible by the development of laser-driven short-pulse EUV sources delivering<br />

sub-10 fs pulses at photon energies of up to 500 eV.<br />

Recent experimental results will be presented that show the potential<br />

of time-resolved UPS for such studies. In particular it is possible to<br />

identify and follow different steps within a surface chemical reaction at<br />

a time-resolution < 50 fs. This includes the electronic excitation of the<br />

system under investigation, the consequent change in the chemical state<br />

of an adsorbed molecule and the real-time observation of a vibrational<br />

excitation of the adsorbate.<br />

Zeit: Donnerstag 14:45–15:30 Raum: H36<br />

Hauptvortrag O 36.1 Do 14:45 H36<br />

Dynamics of electron relaxation and exciton formation on<br />

Si(001) — •Martin Weinelt — Lehrstuhl für Festkörperphysik,<br />

Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen, Germany<br />

Carrier dynamics in silicon is of both fundamental and technological<br />

importance. Equally relevant as the knowledge of the bulk electronic<br />

properties is the understanding of electron dynamics at interfaces. Coupling<br />

of bulk electrons to surface or interface states can dominate electron<br />

recombination and affects device performance. The underlying electrontransfer<br />

processes occur on (sub-)picosecond timescale and can be studied<br />

O 37 Zeitaufgelöste Spektroskopie I<br />

following the electron dynamics after femtosecond-pulse laser excitation.<br />

Identification of the individual processes of carrier scattering, trapping<br />

and recombination requires a detailed knowledge of the surface electronic<br />

structure. The necessary comprehensive information of momentum, energy<br />

and lifetime of excited electrons is obtained by means of angle-,<br />

energy-, and time-resolved two-photon photoelectron spectroscopy. Combining<br />

this experimental approach with many-body perturbation theory<br />

the dynamics of excited electronic states at the Si(100) surface is elucidated.<br />

The recombination of hot carriers at the surface is ruled by<br />

picosecond relaxation of excited electron-hole pairs, resulting in the formation<br />

of an exciton which lives for nanoseconds.<br />

Zeit: Donnerstag 15:45–17:30 Raum: H36<br />

O 37.1 Do 15:45 H36<br />

Electron-phonon coupling for surface states on Pd(111) —<br />

•Andrea Melzer, Martin Weinelt, and Thomas Fauster —<br />

Lehrstuhl für Festkörperphysik, Staudtstraße 7, D-91058 Erlangen<br />

Electrons in surface states can be scattered by phonons to bulk states<br />

or to states within the surface band at different parallel momentum. The<br />

first process usually requires phonons with large momentum compared<br />

to the second process. On the Pd(111) surface an unoccupied sp-like<br />

surface state exists and can be studied by time-resolved two-photon photoemission.<br />

Scattering to bulk states reduces the population in contrast<br />

to scattering within the surface band. The first process shows up in a<br />

reduced lifetime while both processes increase the linewidth. We have<br />

measured the change of lifetime and linewidth for the surface state on<br />

Pd(111) for variable temperatures up to 900 K. For the electron-phonon<br />

mass enhancement parameter a value of 0.36 is found which is significantly<br />

larger than for the occupied surface states on other fcc(111) surfaces.<br />

The time-resolved data indicate large contributions from intraband<br />

scattering in contrast to theoretical expectations.<br />

O 37.2 Do 16:00 H36<br />

Break junctions under femtosecond laser illumination:<br />

steps towards time-resolved photocurrent spectroscopy on<br />

the nanoscale — •W. Pfeiffer 1 , S. Dantscher 1 , C. Kennerknecht<br />

1 , S. Schramm 1 , H.B. Weber 2 , and J.U. Würfel 2 —<br />

1 Physikalisches Institut EP1, Universität Würzburg, 97074 Würzburg<br />

— 2 Forschungszentrum Karlsruhe, Institut für Nanotechnologie,<br />

D-76021 Karlsruhe<br />

Microscopic break junctions provide fascinating possibilities to investigate<br />

microscopic charge transport phenomena. Up to now the studies<br />

are restricted to DC current measurements. Consequently, the illumination<br />

of the contact and the investigation of the resulting photocurrents<br />

opens a new field of research. Especially, ultrashort laser pulses combined<br />

with time-resolved spectroscopy could then reveal details of the charge<br />

transfer dynamics that are of utmost importance for the understanding<br />

of the conductivity in nanoscale contacts. We present first experiments<br />

on the illumination of tunnel junctions and single molecule contacts with<br />

ultrashort laser pulses (800 nm and 400 nm, 50 fs). The junctions are<br />

stable up to intensities of 10 8 Wcm −2 and thus allow the investigation of<br />

microscopic transport in intense laser fields. The mechanisms leading to<br />

a light induced modulation of the conductance are discussed for tunnel<br />

junctions and single molecule contacts.<br />

O 37.3 Do 16:15 H36<br />

Lifetimes of quasiparticle excitations in 4d transition metals<br />

Mo and Rh — •Alexander Mönnich, Daniela Bayer, Michael<br />

Bauer, and Martin Aeschlimann — Dep. of Physics, University of<br />

Kaiserslautern, D-67663 Kaiserslautern<br />

The dynamics of excited electrons in metals are crucial for a detailed<br />

understanding of various chemical and physical phenomena on metal surfaces.<br />

It is already known that noble metals show a longer lifetime of<br />

quasiparticle excitations than transition metals due to the higher densityof-states<br />

around the Fermi level. But also the electron dynamics between<br />

different transition metals can exhibit significant divergences.<br />

With the time resolved two-photon photoelectron spectroscopy (TR-<br />

2PPE) method we investigated the electron dynamics of Mo and Rh in an<br />

energy range up to 3eV above the Fermi level. LMTO-RPG-GW calculations<br />

predict a surprising large difference between the averaged lifetimes<br />

of electron quasiparticles in the 4d transition metals Mo and Rh [1] that<br />

were confirmed in our experiment. The characteristics of electronic structure<br />

responsible for energy dissipation processes of hot electrons will be<br />

discussed.<br />

[1] V. P. Zhukov, F. Aryasetiawan, E. V. Chulkov, P. M. Enchenique<br />

PRB 65 11511 (2002)

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