Plenarvorträge - DPG-Tagungen
Plenarvorträge - DPG-Tagungen
Plenarvorträge - DPG-Tagungen
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Oberflächenphysik Donnerstag<br />
The growth morphology of CoO films deposited in the temperature<br />
range of 300-500 K has been studied by Spot Profile Analysis of Low<br />
Energy Electron Diffraction (SPA-LEED). At a coverage of 3 ML the<br />
growth is pseudomorphic to the Ag(100) substrate with a compression of<br />
4% in the CoO film. Relaxation to the bulk lattice of CoO occurs at a<br />
O 35 Hauptvortrag Bauer<br />
coverage of 6 ML. At 10 ML, splitting of the (00) spot indicates the presence<br />
of terraces which we relate to the carpet growth mode of the film.<br />
Upon annealing in O2 at 500 K, both CoO(100) and CoO(111) structures<br />
were found, whereby the (111) structure shows a ( √ 3 × √ 3)R30 ◦<br />
reconstruction. The corresponding structural model will be presented.<br />
Zeit: Donnerstag 14:00–14:45 Raum: H36<br />
Hauptvortrag O 35.1 Do 14:00 H36<br />
Femtosecond ultraviolet photoelectron spectroscopy for the<br />
study of ultrafast surface processes — •Michael Bauer — Fachbereich<br />
Physik, TU Kaiserslautern, 67663 Kaiserslautern, Deutschland<br />
The technique of ultraviolet photoelectron spectroscopy allows detailed<br />
insights into static properties of molecular adsorption such as bond character,<br />
adsorption geometry or intermolecular interaction.<br />
In combination with an optical pump-probe scheme this technique can<br />
in principle also be used to monitor changes in the adsorbate state on a<br />
femtosecond time-scale and, in consequence, the evolution of the chemical<br />
O 36 Hauptvortrag Weinelt<br />
surface state during the course of a chemical reaction. This has become<br />
possible by the development of laser-driven short-pulse EUV sources delivering<br />
sub-10 fs pulses at photon energies of up to 500 eV.<br />
Recent experimental results will be presented that show the potential<br />
of time-resolved UPS for such studies. In particular it is possible to<br />
identify and follow different steps within a surface chemical reaction at<br />
a time-resolution < 50 fs. This includes the electronic excitation of the<br />
system under investigation, the consequent change in the chemical state<br />
of an adsorbed molecule and the real-time observation of a vibrational<br />
excitation of the adsorbate.<br />
Zeit: Donnerstag 14:45–15:30 Raum: H36<br />
Hauptvortrag O 36.1 Do 14:45 H36<br />
Dynamics of electron relaxation and exciton formation on<br />
Si(001) — •Martin Weinelt — Lehrstuhl für Festkörperphysik,<br />
Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen, Germany<br />
Carrier dynamics in silicon is of both fundamental and technological<br />
importance. Equally relevant as the knowledge of the bulk electronic<br />
properties is the understanding of electron dynamics at interfaces. Coupling<br />
of bulk electrons to surface or interface states can dominate electron<br />
recombination and affects device performance. The underlying electrontransfer<br />
processes occur on (sub-)picosecond timescale and can be studied<br />
O 37 Zeitaufgelöste Spektroskopie I<br />
following the electron dynamics after femtosecond-pulse laser excitation.<br />
Identification of the individual processes of carrier scattering, trapping<br />
and recombination requires a detailed knowledge of the surface electronic<br />
structure. The necessary comprehensive information of momentum, energy<br />
and lifetime of excited electrons is obtained by means of angle-,<br />
energy-, and time-resolved two-photon photoelectron spectroscopy. Combining<br />
this experimental approach with many-body perturbation theory<br />
the dynamics of excited electronic states at the Si(100) surface is elucidated.<br />
The recombination of hot carriers at the surface is ruled by<br />
picosecond relaxation of excited electron-hole pairs, resulting in the formation<br />
of an exciton which lives for nanoseconds.<br />
Zeit: Donnerstag 15:45–17:30 Raum: H36<br />
O 37.1 Do 15:45 H36<br />
Electron-phonon coupling for surface states on Pd(111) —<br />
•Andrea Melzer, Martin Weinelt, and Thomas Fauster —<br />
Lehrstuhl für Festkörperphysik, Staudtstraße 7, D-91058 Erlangen<br />
Electrons in surface states can be scattered by phonons to bulk states<br />
or to states within the surface band at different parallel momentum. The<br />
first process usually requires phonons with large momentum compared<br />
to the second process. On the Pd(111) surface an unoccupied sp-like<br />
surface state exists and can be studied by time-resolved two-photon photoemission.<br />
Scattering to bulk states reduces the population in contrast<br />
to scattering within the surface band. The first process shows up in a<br />
reduced lifetime while both processes increase the linewidth. We have<br />
measured the change of lifetime and linewidth for the surface state on<br />
Pd(111) for variable temperatures up to 900 K. For the electron-phonon<br />
mass enhancement parameter a value of 0.36 is found which is significantly<br />
larger than for the occupied surface states on other fcc(111) surfaces.<br />
The time-resolved data indicate large contributions from intraband<br />
scattering in contrast to theoretical expectations.<br />
O 37.2 Do 16:00 H36<br />
Break junctions under femtosecond laser illumination:<br />
steps towards time-resolved photocurrent spectroscopy on<br />
the nanoscale — •W. Pfeiffer 1 , S. Dantscher 1 , C. Kennerknecht<br />
1 , S. Schramm 1 , H.B. Weber 2 , and J.U. Würfel 2 —<br />
1 Physikalisches Institut EP1, Universität Würzburg, 97074 Würzburg<br />
— 2 Forschungszentrum Karlsruhe, Institut für Nanotechnologie,<br />
D-76021 Karlsruhe<br />
Microscopic break junctions provide fascinating possibilities to investigate<br />
microscopic charge transport phenomena. Up to now the studies<br />
are restricted to DC current measurements. Consequently, the illumination<br />
of the contact and the investigation of the resulting photocurrents<br />
opens a new field of research. Especially, ultrashort laser pulses combined<br />
with time-resolved spectroscopy could then reveal details of the charge<br />
transfer dynamics that are of utmost importance for the understanding<br />
of the conductivity in nanoscale contacts. We present first experiments<br />
on the illumination of tunnel junctions and single molecule contacts with<br />
ultrashort laser pulses (800 nm and 400 nm, 50 fs). The junctions are<br />
stable up to intensities of 10 8 Wcm −2 and thus allow the investigation of<br />
microscopic transport in intense laser fields. The mechanisms leading to<br />
a light induced modulation of the conductance are discussed for tunnel<br />
junctions and single molecule contacts.<br />
O 37.3 Do 16:15 H36<br />
Lifetimes of quasiparticle excitations in 4d transition metals<br />
Mo and Rh — •Alexander Mönnich, Daniela Bayer, Michael<br />
Bauer, and Martin Aeschlimann — Dep. of Physics, University of<br />
Kaiserslautern, D-67663 Kaiserslautern<br />
The dynamics of excited electrons in metals are crucial for a detailed<br />
understanding of various chemical and physical phenomena on metal surfaces.<br />
It is already known that noble metals show a longer lifetime of<br />
quasiparticle excitations than transition metals due to the higher densityof-states<br />
around the Fermi level. But also the electron dynamics between<br />
different transition metals can exhibit significant divergences.<br />
With the time resolved two-photon photoelectron spectroscopy (TR-<br />
2PPE) method we investigated the electron dynamics of Mo and Rh in an<br />
energy range up to 3eV above the Fermi level. LMTO-RPG-GW calculations<br />
predict a surprising large difference between the averaged lifetimes<br />
of electron quasiparticles in the 4d transition metals Mo and Rh [1] that<br />
were confirmed in our experiment. The characteristics of electronic structure<br />
responsible for energy dissipation processes of hot electrons will be<br />
discussed.<br />
[1] V. P. Zhukov, F. Aryasetiawan, E. V. Chulkov, P. M. Enchenique<br />
PRB 65 11511 (2002)