Plenarvorträge - DPG-Tagungen
Plenarvorträge - DPG-Tagungen
Plenarvorträge - DPG-Tagungen
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Oberflächenphysik Freitag<br />
where Cu dissolution starts. At higher potentials thicker and still epitaxial<br />
Au islands are emerging on the surface. The applied potential range<br />
is although always well below the so-called critical potential, where the<br />
passivation breaks down and massive Cu dissolution starts. AFM images<br />
reveal a surface that is densely packed with Au islands of a homogeneous<br />
size distribution. Only with longer timescales a more porous morphology<br />
of the surface evolves.<br />
O 46.2 Fr 11:30 H45<br />
X-ray reflectivity of thin liquid films — •Robert Fendt 1 , Christian<br />
Gutt 1 , Michael Sprung 1 , Tuana Ghaderi 1 , Oliver Seeck 2 ,<br />
and Metin Tolan 1 — 1 Experimentelle Physik I, Universität Dortmund,<br />
44221 Dortmund — 2 IFF, Forschungszentrum Jülich, 52425 Jülich<br />
Physical properties of confined liquids may differ significantly from<br />
those of the corresponding bulk liquids. The confinement of a liquid between<br />
a hard wall and the liquid-gas interface on a nanometer thick region<br />
is expected to alter the liquid structure drastically.<br />
We investigated the structure of thin liquid heptane and heptanol films<br />
(thickness of 2-12 nm) adsorbed on silicon substrates by means of x-ray<br />
reflectivity. The aim of the experiment was to study (i) the liquid-solid<br />
interface, (ii) the influence of substrate-adsorbate interaction and (iii)<br />
the capillary wave spectrum of the films. The experiments were carried<br />
out using a newly constructed sample cell which allows to cover a substrate<br />
by a liquid film via gas adsorption. Experiments were carried out<br />
at the W1 diffractometer at Hasylab, Hamburg and at Dortmund using<br />
a laboratory diffractometer.<br />
The results show that the density of thin liquid heptane films is well<br />
described by a homogenous electron density and a capillary wave broadened<br />
interface to the gas phase. In contrast thin films of the corresponding<br />
alcohol heptanol show pronounced oscillations in the electron density<br />
profile, indicating a layering of the molecules close to the hard wall.<br />
O 46.3 Fr 11:45 H45<br />
Nanofluidics: Viscous Dissipation in Layered Liquid Films —<br />
•Thomas Becker and Frieder Mugele — Angewandte Physik, Universität<br />
Ulm, Albert Einstein Allee 11, 89081 Ulm<br />
Using a temperature-controlled 2D-imaging Surface Forces Apparatus<br />
(SFA) we investigated the layer-by-layer collapse of molecularly thin films<br />
of a model liquid between two atomically smooth substrates as a function<br />
of temperature. The dynamics of the consecutive expulsion of four<br />
molecular layers were found to slow down with decreasing film thickness<br />
but showed no evidence for confinement introduced solidification. Using a<br />
new hydrodynamic model, we show that the sliding friction of the liquid<br />
layers on top of the solid substrates is approximately 35 times higher than<br />
the mutual friction between adjacent liquid layers. The latter was independent<br />
of film thickness and in close agreement with the bulk viscosity<br />
[1]. [1] T. Becker and F. Mugele, Phys. Rev. Lett. 91 , p. 166104/1-4<br />
(2003)<br />
O 46.4 Fr 12:00 H45<br />
Interactions Between Seeds and Silicon Nanorods Grown by<br />
Thermal CVD — •Vladislav Spassov, Alan Savan, and Henry<br />
Haefke — CSEM Swiss Center for Electronics and Microtechnology,<br />
Inc., Rue Jaquet-Droz 1, CH 2000, Neuchatel, Switzerland<br />
Growth of silicon nanorods or whiskers by thermal chemical vapor deposition<br />
(CVD) often takes place by the vapor-liquid-solid (VLS) mechanism.<br />
A catalytic seed, for example gold, liquefies on the surface of a<br />
supporting substrate, decomposing the source material in the gas phase<br />
and increasing the epitaxial growth rate of a crystal below it. In the case<br />
of gold, the metal cap remains at the top surface, with the pure, crystalline<br />
silicon nanorod growing up from below. While silicon is the most<br />
widely-used semiconductor material used for the fabrication of electronic<br />
devices to date, gold is normally avoided during device processing, because<br />
it migrates rapidly into silicon and creates deep levels which can<br />
degrade device performance. In this investigation, we use high resolution<br />
transmission electron microscopy (HR-TEM) to examine the interface between<br />
the seed and the Si nanorod. Further studies look for the presence<br />
and placement of catalyst or catalyst-silicon alloy or eutectic mixtures in<br />
or along the nanorod.<br />
O 46.5 Fr 12:15 H45<br />
Structural and electronic effects in the electrochemical properties<br />
of UHV prepared bimetallic Pt/Ru(0001) electrodes<br />
— •H.E. Hoster, E. Filonenko, and R.J. Behm — Abteilung<br />
Oberflächenchemie und Katalyse, Universität Ulm, 89069 Ulm<br />
Combining UHV-STM with cyclic voltammetry in an electrochemical<br />
prechamber, we have investigated the adsorption of H and OH in HClO4<br />
solution on two different, well-defined types of bimetallic Pt/Ru(0001)<br />
surfaces. On pure Ru(0001) the removal of OHad in the cathodic scan,<br />
together with the simultaneous adsorption of Hupd, and its counterpart<br />
in the reverse scan direction exhibit a significant hysteresis. In the presence<br />
of vapor deposited Pt monolayer islands, these processes proceed<br />
much more rapidly in a couple of sharp peaks around 100 mV RHE,<br />
with no apparent hysteresis. We explain the enhanced H adsorption by<br />
a kinetic promotion effect, including facile hydrogen adsorption on the<br />
Pt islands and subsequent spill-over to the Ru areas, where the adsorbed<br />
hydrogen can react with OHad. In the anodic scan, the Pt sites in turn<br />
allow for a faster oxidation of H adsorbed at Ru. On atomically smooth<br />
PtxRuy/Ru(0001) surface alloys, which are formed by subsequent annealing<br />
of the Pt covered substrate to higher temperatures, adsorption of OH<br />
and H are again modified significantly. Comparing results for different Pt<br />
surface contents, where the concentration and ensemble size distribution<br />
of the Pt surface atoms are determined by atomically resolved STM images<br />
with chemical contrast, allows conclusions on the effect of specific<br />
adsorption ensembles and adsorption sites.<br />
O 46.6 Fr 12:30 H45<br />
Adsorption of lead on copper surfaces — •Ari P Seitsonen<br />
und Jürg Hutter — Physikalisch Chemisches Institut der Universität<br />
Zürich<br />
Adsorption of Pb on Cu(100) and Cu(111) leads to a variety of interesting<br />
phenomena. We use molecular dynamics methods to simulate<br />
the Pb monolayer on the copper surfaces, employing both density functional<br />
theory (DFT) to describe the electronic wave functions explicitly,<br />
and embedded atom method (EAM) for an empirical, fitted interaction<br />
between the atoms. We study the melting of the overlayer, and perform<br />
simulations at various different temperature regions.