Bulletin 2011/31 - European Patent Office
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Bulletin 2011/31 - European Patent Office

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(G11C) I.1(1)<br />

G11C 16/02 → (51) G11C 16/04<br />

(51) G11C 16/04 (11) 2 351 039 A1*<br />

G11C 16/02 G11C 16/06<br />

(25) En (26) En<br />

(21) 09840565.7 (22) 23.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/058053 23.09.2009<br />

(87) WO 2010/096099 2010/34 26.08.2010<br />

(30) 30.10.2008 US 261928<br />

(54) • DATENPFAD FÜR EINEN MEHRSTUFIGEN<br />

ZELLENSPEICHER, SPEICHERVERFAHREN<br />

UND VERWENDUNGSVERFAHREN FÜR<br />

EIN SPEICHERARRAY<br />

• DATA PATH FOR MULTI-LEVEL CELL<br />

MEMORY, METHODS FOR STORING AND<br />

METHODS FOR UTILIZING A MEMORY<br />

ARRAY<br />

• TRAJET DE DONNÉES DESTINÉ À UNE<br />

CELLULE DE MÉMOIRE À PLUSIEURS<br />

NIVEAUX, PROCÉDÉ DE MÉMORISATION<br />

ET PROCÉDÉS D UTILISATION D UN<br />

RÉSEAU DE MÉMOIRE<br />

(71) Micron Technology, Inc., 8000 South Federal<br />

Way, Boise, ID 83716-9632, US<br />

(72) BAUER, Mark, Folsom California 95630, US<br />

(74) Small, Gary James, Carpmaels & Ransford<br />

One Southampton Row, London WC1B 5HA,<br />

GB<br />

G11C 16/04 → (51) H01L 21/8247<br />

G11C 16/06 → (51) G11C 16/04<br />

(51) G11C 16/10 (11) 2 351 040 A1*<br />

(25) En (26) En<br />

(21) 09792884.0 (22) 23.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/057992 23.09.2009<br />

(87) WO 2010/047911 2010/17 29.04.2010<br />

(30) 25.10.2008 US 108507 P<br />

<strong>31</strong>.03.2009 US 414925<br />

(54) • SEITENPUFFER-PROGRAMMBEFEHL UND<br />

VERFAHREN ZUM UMPROGRAMMIEREN<br />

VON SEITEN OHNE NEUEINGABE VON<br />

DATEN IN EINE SPEICHERANORDNUNG<br />

• PAGE BUFFER PROGRAM COMMAND AND<br />

METHODS TO REPROGRAM PAGES<br />

WITHOUT RE-INPUTTING DATA TO A<br />

MEMORY DEVICE<br />

• COMMANDE DE PROGRAMME DE TAM-<br />

PON DE PAGES ET PROCÉDÉS POUR<br />

REPROGRAMMER DES PAGES SANS<br />

RESSAISIR DES DONNÉES DANS UN<br />

DISPOSITIF DE MÉMOIRE<br />

(71) Sandisk 3D LLC, 601 McCarthy Boulevard,<br />

Milpitas, CA 95035, US<br />

(72) FASOLI, Luca, Milpitas CA 95035, US<br />

ZHANG, Yuheng, Milpitas CA 95035, US<br />

BALAKRISHNAN, Gopinath, Milpitas CA<br />

95035, US<br />

(74) Tothill, John Paul, Dehns St Bride's House<br />

10 Salisbury Square, London EC4Y 8JD, GB<br />

(51) G11C 16/10 (11) 2 351 041 A1*<br />

G11C 16/34<br />

(25) En (26) En<br />

(21) 0979<strong>31</strong>47.1 (22) 29.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/058882 29.09.2009<br />

(87) WO 2010/047926 2010/17 29.04.2010<br />

(30) 24.10.2008 US 108124 P<br />

21.04.2009 US 427013<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(54) • PROGRAMMIERUNG VON NICHTFLÜCH-<br />

TIGEM SPEICHER MIT EINEM HOCHAUF-<br />

LÖSENDEN VARIABLEN<br />

ANFANGSPROGRAMMIERIMPULS<br />

• PROGRAMMING NON-VOLATILE MEM-<br />

ORY WITH HIGH RESOLUTION VARIABLE<br />

INITIAL PROGRAMMING PULSE<br />

• PROGRAMMATION DE MÉMOIRE NON<br />

VOLATILE À IMPULSION DE PROGRAM-<br />

MATION INITIALE VARIABLE DE HAUTE<br />

RÉSOLUTION<br />

(71) Sandisk Corporation, 601 McCarthy Boulevard,<br />

Milpitas, CA 95035, US<br />

(72) HEMINK, Gerrit, Jan, Milpitas CA 95035, US<br />

(74) Tothill, John Paul, Dehns St Bride's House<br />

10 Salisbury Square, London EC4Y 8JD, GB<br />

G11C 16/10 → (51) G11C 16/34<br />

(51) G11C 16/22 (11) 2 351 042 A1*<br />

(25) En (26) En<br />

(21) 09748611.2 (22) 27.10.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/062156 27.10.2009<br />

(87) WO 2010/053749 2010/19 14.05.2010<br />

(30) 29.10.2008 US 260188<br />

(54) • VERHINDERUNG EINES UNBEABSICHTIG-<br />

TEN PERMANENTSCHREIBSCHUTZES IN<br />

NICHTFLÜCHTIGEM SPEICHER<br />

• PREVENTING UNINTENDED PERMANENT<br />

WRITE-PROTECTION IN NONVOLATILE<br />

MEMORY<br />

• EMPÊCHER UNE PROTECTION EN ÉCRI-<br />

TURE PERMANENTE NON INTENTION-<br />

NELLE DANS UNE MÉMOIRE NON<br />

VOLATILE<br />

(71) Microchip Technology Incorporated, 2355<br />

West Chandler Boulevard, Chandler, AZ<br />

85224-6199, US<br />

(72) MIETUS, David, Francis, Maricopa AZ 85238,<br />

US<br />

BEAUCHAMP, Bruce, Edward, Gilbert AZ<br />

85296, US<br />

ALEXANDER, Samuel, Phoenix AZ 85048,<br />

US<br />

ABERRA, Ezana, H., Gilbert AZ 85295, US<br />

(74) Grubert, Andreas, King & Spalding International<br />

LLP 125 Old Broad Street, GB-London<br />

EC2N 1AR, GB<br />

G11C 16/26 → (51) G11C 16/34<br />

(51) G11C 16/34 (11) 2 351 043 A1*<br />

G11C 16/10<br />

(25) En (26) En<br />

(21) 09736522.5 (22) 23.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/058000 23.09.2009<br />

(87) WO 2010/051116 2010/18 06.05.2010<br />

(30) 05.03.2009 US 398368<br />

30.10.2008 US 109611 P<br />

(54) • PAARBITLEITUNGSPROGRAMMIERUNG<br />

ZUR VERBESSERUNG DER BOOST-SPAN-<br />

NUNGSKLEMMUNG<br />

• PAIR BIT LINE PROGRAMMING TO<br />

IMPROVE BOOST VOLTAGE CLAMPING<br />

• PROGRAMMATION DE PAIRES DE LIGNES<br />

BINAIRES PERMETTANT UNE MEILLEURE<br />

RÉGULATION DE LA TENSION D AMPLI-<br />

FICATION<br />

(71) Sandisk Corporation, 601 McCarthy Boulevard,<br />

Milpitas, CA 95035, US<br />

(72) LUTZE, Jeffrey, W., Milpitas CA 95035, US<br />

DUTTA, Deepanshu, Milpitas CA 95035, US<br />

<strong>31</strong>4<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>31</strong>/<strong>2011</strong>) 03.08.<strong>2011</strong><br />

(74) Tothill, John Paul, Dehns St Bride's House<br />

10 Salisbury Square, London EC4Y 8JD, GB<br />

(51) G11C 16/34 (11) 2 351 044 A1*<br />

G11C 16/10 G11C 16/26<br />

(25) En (26) En<br />

(21) 09827989.6 (22) 30.10.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/062682 30.10.2009<br />

(87) WO 2010/059406 2010/21 27.05.2010<br />

(30) 30.10.2008 US 261124<br />

(54) • DATENÜBERTRAGUNG UND -PROGRAM-<br />

MIERUNG IN EINER SPEICHERVORRICH-<br />

TUNG<br />

• DATA TRANSFER AND PROGRAMMING IN<br />

A MEMORY DEVICE<br />

• TRANSFERT DE DONNÉES ET PROGRAM-<br />

MATION DANS UN DISPOSITIF À<br />

MÉMOIRE<br />

(71) Micron Technology, Inc., 8000 South Federal<br />

Way MS 525, Boise, ID 83716, US<br />

(72) SARIN, Vishal, Cupertino, CA 95014, US<br />

ROOHPARVAR, Frankie, F., Monte Sereno,<br />

CA 95030, US<br />

(74) Beresford, Keith Denis Lewis, et al, Beresford<br />

& Co. 16 High Holborn, London WC1V 6BX,<br />

GB<br />

G11C 16/34 → (51) G11C 16/10<br />

G11C 29/24 → (51) G11C 29/42<br />

G11C 29/26 → (51) G11C 29/42<br />

(51) G11C 29/42 (11) 2 351 045 A2*<br />

G11C 29/24 G11C 29/26<br />

(25) En (26) En<br />

(21) 09829622.1 (22) 28.10.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/062383 28.10.2009<br />

(87) WO 2010/062655 2010/22 03.06.2010<br />

(88) 12.08.2010<br />

(30) 28.10.2008 US 259949<br />

(54) • FEHLERKORREKTUR IN MEHREREN<br />

HALBLEITERSPEICHEREINHEITEN<br />

• ERROR CORRECTION IN MULTIPLE<br />

SEMICONDUCTOR MEMORY UNITS<br />

• CORRECTION D ERREUR DANS LES<br />

UNITÉS DE MÉMOIRE SEMI-CONDUCTRI-<br />

CES MULTIPLES<br />

(71) Micron Technology, Inc., 8000 South Federal<br />

Way, Boise, ID 83716-9632, US<br />

(72) RESNICK, David, R., Boise Idaho 83705-<br />

5205, US<br />

(74) Maury, Richard Philip, Marks & Clerk LLP 90<br />

Long Acre, London WC2E 9RA, GB<br />

G12B 3/08 → (51) B23Q 15/00<br />

G12B 5/00 → (51) B23Q 15/00<br />

(51) H01B 1/00 (11) 2 351 046 A2*<br />

B82B 3/00 C08J 5/18<br />

B82B 1/00<br />

(25) En (26) En<br />

(21) 09822393.6 (22) 28.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/058646 28.09.2009<br />

(87) WO 2010/047922 2010/17 29.04.2010<br />

(88) 01.07.2010<br />

(30) 24.10.2008 US 258263<br />

06.04.2009 US 419178<br />

03.09.2009 US 553300

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