Bulletin 2011/31 - European Patent Office
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Bulletin 2011/31 - European Patent Office

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(H01L) II.1(1)<br />

(73) Cambridge Display Technology Limited,<br />

Building 2020, Cambourne Business Park,<br />

Cambridgeshire, CB3 6DW, GB<br />

(72) HALLS, Jonathan, Cambridge Display Technology<br />

Ltd, Madingley Road, Cambridge,<br />

Cambridgeshire, GB<br />

WILSON, Richard, Cambridge Display Technology<br />

Ltd, Madingley Road Cambridge,<br />

Cambridgeshire, GB<br />

(74) Gilani, Anwar, Cambridge Display Technology<br />

Ltd., Building 2020, Cambourne Business<br />

Park, Cambridgeshire CB3 6DW, GB<br />

H01L 29/06 → (51) H01L 21/336<br />

H01L 29/06 → (51) H01L 29/78<br />

H01L 29/08 → (51) H01L 29/78<br />

H01L 29/36 → (51) H01L 29/78<br />

H01L 29/40 → (51) H01L 21/336<br />

H01L 29/417 → (51) H01L 29/868<br />

(51) H01L 29/78 (11) 0 967 660 B1<br />

H01L 29/06 H01L 29/08<br />

H01L 29/36 H01L 29/10<br />

H01L 21/336<br />

(25) En (26) En<br />

(21) 99111361.4 (22) 10.06.1999<br />

(84) DE FR GB NL<br />

(43) 29.12.1999<br />

(30) 25.06.1998 JP 17861298<br />

19.04.1999 JP 11041699<br />

(54) • MOS-Halbleiteranordnung<br />

• MOS semiconductor device<br />

• Dispositif semi-conducteur MOS<br />

(73) Panasonic Corporation, 1006, Oaza Kadoma,<br />

Kadoma-shi Osaka 571-8501, JP<br />

(72) Sogo, Seiji, Kyoto-shi, Kyoto 615-8001, JP<br />

Ueno, Yuji, Kusatsu-shi, Shiga 525-0057, JP<br />

Yamaguchi, Seiki, Kouga-gun, Shiga 520-<br />

3332, JP<br />

Mori, Yoshihiro, Kyoto-shi, Kyoto 612-8485,<br />

JP<br />

Hachiya, Yoshiaki, Otsu-shi, Shiga 520-<br />

0223, JP<br />

Takahashi, Satoru, Kyoto-shi Kyoto 612-<br />

8485, JP<br />

Yamanishi, Yuji, Ibaraki-shi, Osaka 567-<br />

0045, JP<br />

Hirano, Ryuma, Souraku-gun, Kyoto 619-<br />

0237, JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser<br />

Anwaltssozietät, Leopoldstrasse 4,<br />

80802 München, DE<br />

(51) H01L 29/78 (11) 1 964 177 B1<br />

H01L 29/861 H01L 21/329<br />

H01L 21/336 H01L 29/06<br />

H01L 29/08<br />

(25) En (26) En<br />

(21) 06833<strong>31</strong>7.8 (22) 17.11.2006<br />

(84) DE FR GB<br />

(43) 03.09.2008<br />

(86) JP 2006/323513 17.11.2006<br />

(87) WO 2007/072655 2007/26 28.06.2007<br />

(30) 21.12.2005 JP 2005367417<br />

(54) • HALBLEITERBAUELEMENTE UND HER-<br />

STELLUNGSVERFAHREN DAFÜR<br />

• SEMICONDUCTOR DEVICES AND MANU-<br />

FACTURING METHOD THEREOF<br />

• DISPOSITIFS A SEMI-CONDUCTEURS ET<br />

PROCEDE DE FABRICATION<br />

(73) TOYOTA JIDOSHA KABUSHIKI KAISHA, 1,<br />

Toyota-cho, Toyota-shi, Aichi-ken, 471-<br />

8571, JP<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(72) TAKI, Masato, Toyota-shi, Aichi 4718571, JP<br />

KAWAKAMI, Masahiro, Toyota-shi, Aichi<br />

4718571, JP<br />

HAYAKAWA, Kiyoharu, Aichi-gun, Aichi<br />

4801192, JP<br />

ISHIKO, Masayasu, Aichi-gun, Aichi<br />

4801192, JP<br />

(74) Winter, Brandl, Fürniss, Hübner, Röss,<br />

Kaiser, Polte - Partnerschaft, Alois-Steinecker-Strasse<br />

22, 85354 Freising, DE<br />

H01L 29/78 → (51) H01L 21/336<br />

(51) H01L 29/80 (11) 1 998 376 B1<br />

(25) Ja (26) En<br />

(21) 06729258.1 (22) 16.03.2006<br />

(84) DE GB<br />

(43) 03.12.2008<br />

(86) JP 2006/305265 16.03.2006<br />

(87) WO 2007/108055 2007/39 27.09.2007<br />

(54) • VERBUND-HALBLEITERANORDNUNG UND<br />

PROZESS ZU IHRER HERSTELLUNG<br />

• COMPOUND SEMICONDUCTOR DEVICE<br />

AND PROCESS FOR PRODUCING THE<br />

SAME<br />

• DISPOSITIF A SEMI-CONDUCTEUR COM-<br />

POSE ET SON PROCEDE DE PRODUCTION<br />

(73) Fujitsu Ltd., 1-1, Kamikodanaka 4-chome,<br />

Nakahara-ku, Kawasaki-shi, Kanagawa 211-<br />

8588, JP<br />

(72) KIKKAWA, Toshihide, Kawasaki-shi, Kanagawa,<br />

211-8588, JP<br />

(74) Fenlon, Christine Lesley, Haseltine Lake LLP<br />

Lincoln House, 5th Floor 300 High Holborn,<br />

London WC1V 7JH, GB<br />

(60) 09178269.8 / 2 175 494<br />

09178271.4 / 2 166 575<br />

H01L 29/861 → (51) H01L 29/78<br />

(51) H01L 29/868 (11) 1 454 364 B1<br />

H01L 27/06 H01L 29/417<br />

(25) De (26) De<br />

(21) 02798<strong>31</strong>6.2 (22) 22.11.2002<br />

(84) DE<br />

(43) 08.09.2004<br />

(86) EP 2002/01<strong>31</strong>38 22.11.2002<br />

(87) WO 2003/050885 2003/25 19.06.2003<br />

(30) 11.12.2001 DE 10160829<br />

(54) • DIODENSCHALTUNG UND VERFAHREN<br />

ZUM HERSTELLEN EINER DIODEN-<br />

SCHALTUNG<br />

• DIODE CIRCUIT AND METHOD FOR MAK-<br />

ING SAME<br />

• CIRCUIT DE DIODE ET SON PROCEDE DE<br />

REALISATION<br />

(73) Infineon Technologies AG, Am Campeon 1-<br />

12, 85579 Neubiberg, DE<br />

(72) AHRENS, Carsten, 81927 München, DE<br />

HARTUNG, Wolfgang, 81541 München, DE<br />

HEUERMANN, Holger, 52223 Stolberg, DE<br />

LOSEHAND, Reinhard, 80637 München, DE<br />

SCHAFFER, Josef-Paul, 81245 München, DE<br />

(74) Zinkler, Franz, et al, Schoppe, Zimmermann,<br />

Stöckeler & Zinkler <strong>Patent</strong>anwälte Postfach<br />

246, 82043 Pullach bei München, DE<br />

H01L <strong>31</strong>/0203 → (51) H01L 27/146<br />

H01L <strong>31</strong>/0224 → (51) H01B 1/22<br />

H01L <strong>31</strong>/028 → (51) C23C 18/12<br />

(51) H01L <strong>31</strong>/042 (11) 2 263 265 B1<br />

(25) De (26) De<br />

(21) 09778530.7 (22) 15.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

844<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>31</strong>/<strong>2011</strong>) 03.08.<strong>2011</strong><br />

(43) 22.12.2010<br />

(86) EP 2009/006666 15.09.2009<br />

(87) WO 2010/124709 2010/44 04.11.2010<br />

(30) 28.04.2009 DE 102009014666<br />

28.04.2009 DE 102009011886<br />

27.05.2009 DE 202009007556 U<br />

(54) • VERFAHREN ZUM BETRIEB EINER PHO-<br />

TOVOLTAIKANLAGE<br />

• METHOD OF OPERATION OF A PHOTO-<br />

VOLTAIC INSTALLATION<br />

• MÉTHODE D'EXPLOITATION D'UNE INS-<br />

TALLATION PHOTOVOLTAÏQUE<br />

(73) Eulektra GmbH, Schornacker 67, 46485<br />

Wesel, DE<br />

(72) HAIN, Siegfried, 46499 Hamminkeln, DE<br />

(74) Nunnenkamp, Jörg, Andrejewski - Honke<br />

<strong>Patent</strong>- und Rechtsanwälte An der Reichsbank<br />

8, 45127 Essen, DE<br />

H01L <strong>31</strong>/10 → (51) G01J 1/46<br />

(51) H01L 33/00 (11) 1 855 327 B1<br />

(25) En (26) En<br />

(21) 07107655.8 (22) 07.05.2007<br />

(84) DE FR GB NL<br />

(43) 14.11.2007<br />

(30) 08.05.2006 KR 20060041006<br />

17.04.2007 KR 20070037414<br />

17.04.2007 KR 20070037415<br />

17.04.2007 KR 20070037416<br />

(54) • Lichtemittierende Halbleitervorrichtung<br />

• Semiconductor light emitting device<br />

• Dispositif électroluminescent à semiconducteur<br />

(73) LG Electronics, Inc., 20, Yeouido-dong<br />

Yeongdeungpo-gu, Seoul 150-721, KR<br />

LG Innotek Co., Ltd., Seoul Square 541,<br />

Namdaemunno 5-ga Jung-gu, Seoul 100-<br />

714, KR<br />

(72) Cho, Hyun Kyong, 137-900 Seoul, KR<br />

Kim, Sun Kyung, Yongin-si, Gyeonggi-do<br />

448-534, KR<br />

Jang, Jun Ho, Dongan-gu, Anyang-si,<br />

Gyeonggi-do 4<strong>31</strong>-753, KR<br />

(74) Cabinet Plasseraud, 52, rue de la Victoire,<br />

75440 Paris Cedex 09, FR<br />

(60) 111670<strong>31</strong>.1<br />

11167034.5<br />

11167036.0<br />

11167038.6<br />

(51) H01L 33/00 (11) 2 197 049 B1<br />

H01L 21/205 H05B 33/10<br />

C30B 29/38 C23C 16/34<br />

H01L 21/78<br />

(25) En (26) En<br />

(21) 10156009.2 (22) <strong>31</strong>.03.2006<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC NL PL PT RO<br />

SE SI SK TR<br />

(43) 16.06.2010<br />

(30) 04.04.2005 JP 2005108072<br />

(54) • Verfahren zur Herstellung eines Elements<br />

auf GaN-Basis<br />

• Process for producing a GaN-based element<br />

• Procédé de production d'un élément à base<br />

de GaN<br />

(73) Tohoku Techno Arch Co., Ltd., 468, Aza<br />

Aoba, Aramaki, Aoba-ku, Sendai-shi, Miyagi<br />

980-0845, JP<br />

Furukawa Co., Ltd., 2-3, Marunouchi 2chome,<br />

Chiyoda-ku Tokyo 100-8370, JP<br />

Mitsubishi Chemical Corporation, 14-1,<br />

Shiba 4-chome Minato-ku, Tokyo 108-0014,<br />

JP<br />

DOWA Holdings Co., Ltd, 14-1, Sotokanda 4chome<br />

Chiyoda-ku, Tokyo 101-0021, JP

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