Bulletin 2011/31 - European Patent Office
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Bulletin 2011/31 - European Patent Office

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(H01L) I.1(1)<br />

H01L 21/205 → (51) H01L <strong>31</strong>/072<br />

H01L 21/265 → (51) H01L <strong>31</strong>/042<br />

(51) H01L 21/3065 (11) 2 351 070 A2*<br />

C23C 16/52 H01L 21/205<br />

H05H 1/00<br />

(25) En (26) En<br />

(21) 10770205.2 (22) 27.04.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2010/032582 27.04.2010<br />

(87) WO 2010/126893 2010/44 04.11.2010<br />

(88) 21.04.<strong>2011</strong><br />

(30) 01.05.2009 US 174937 P<br />

26.04.2010 US 767775<br />

(54) • VERFAHREN UND VORRICHTUNG ZUR<br />

STEUERUNG EINER IONENENERGIEVER-<br />

TEILUNG<br />

• METHOD AND APPARATUS FOR CON-<br />

TROLLING ION ENERGY DISTRIBUTION<br />

• PROCÉDÉ ET APPAREIL DE COMMANDE<br />

DE DISTRIBUTION D'ÉNERGIE D'IONS<br />

(71) Advanced Energy Industries, Inc., 1625<br />

Sharp Point Drive, Fort Collins, CO 80525,<br />

US<br />

(72) HECKMAN, Randy, Fort Collins CO 80528,<br />

US<br />

BROUK, Victor, Fort Collins CO 80525, US<br />

(74) Gill, David Alan, W.P. Thompson & Co. 55<br />

Drury Lane, London WC2B 5SQ, GB<br />

(51) H01L 21/3205 (11) 2 351 071 A2*<br />

(25) En (26) En<br />

(21) 09828004.3 (22) 05.11.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/063440 05.11.2009<br />

(87) WO 2010/059434 2010/21 27.05.2010<br />

(88) 29.07.2010<br />

(30) 19.11.2008 US 274169<br />

(54) • VERFAHREN ZUR FORMUNG EINES LEIT-<br />

FÄHIGEN MATERIALS, VERFAHREN ZUR<br />

SELEKTIVEN FORMUNG EINES LEITFÄHI-<br />

GEN MATERIALS, VERFAHREN ZUR PLA-<br />

TINFORMUNG SOWIE VERFAHREN ZUR<br />

FORMUNG LEITFÄHIGER STRUKTUREN<br />

• METHODS FOR FORMING A CONDUCTIVE<br />

MATERIAL, METHODS FOR SELECTIVELY<br />

FORMING A CONDUCTIVE MATERIAL,<br />

METHODS FOR FORMING PLATINUM,<br />

AND METHODS FOR FORMING CONDUC-<br />

TIVE STRUCTURES<br />

• PROCÉDÉS DE FORMATION DE MATÉ-<br />

RIAUX CONDUCTEURS, DE FORMATION<br />

SÉLECTIVE DE MATÉRIAUX CONDUC-<br />

TEURS, DE FORMATION DE PLATINE, ET<br />

D ÉLABORATION DE STRUCTURES<br />

CONDUCTRICES<br />

(71) Micron Technology, Inc., 8000 South Federal<br />

Way Mail Stop 525, Boise, ID 83707-0006,<br />

US<br />

(72) MARSH, Eugene P., Boise Idaho 83716, US<br />

(74) Maury, Richard Philip, Marks & Clerk LLP 90<br />

Long Acre, London WC2E 9RA, GB<br />

(51) H01L 21/3213 (11) 2 351 072 A1*<br />

C09K 13/02<br />

(25) En (26) En<br />

(21) 09774704.2 (22) 05.11.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) IB 2009/007328 05.11.2009<br />

(87) WO 2010/052545 2010/19 14.05.2010<br />

(30) 06.11.2008 DE 102008056086<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(54) • ZUSATZSTOFF FÜR ALKALIÄTZLÖSUNGEN<br />

INSBESONDERE FÜR TEXTURÄTZLÖSUN-<br />

GEN UND HERSTELLUNGSPROZESS<br />

DAFÜR<br />

• ADDITIVE FOR ALKALINE ETCHING<br />

SOLUTIONS, IN PARTICULAR FOR TEX-<br />

TURE ETCHING SOLUTIONS, AND PRO-<br />

CESS FOR PRODUCING IT<br />

• ADDITIF POUR SOLUTIONS D'ATTAQUE<br />

CHIMIQUE ALCALINES, EN PARTICULIER<br />

POUR SOLUTIONS D'ATTAQUE CHIMIQUE<br />

DE TEXTURE, ET PROCÉDÉ DE PRODUC-<br />

TION DUDIT ADDITIF<br />

(71) GP Solar GmbH, Turmstrasse 22, 78467<br />

Konstanz, DE<br />

(72) MELNYK, Ihor, 78465 Konstanz, DE<br />

KRÜMBERG, Jens, 78467 Konstanz, DE<br />

SCHMIDT, Michael, 78465 Konstanz, DE<br />

MICHEL, Michael, 10963 Berlin, DE<br />

(74) Heyerhoff & Geiger, <strong>Patent</strong>anwälte Heiligenbreite<br />

52, 88662 Überlingen, DE<br />

H01L 21/34 → (51) H01L 27/146<br />

H01L 21/48 → (51) H01L 23/498<br />

H01L 21/56 → (51) C08L 83/04<br />

(51) H01L 21/66 (11) 2 351 073 A1*<br />

H01L <strong>31</strong>/042<br />

(25) En (26) En<br />

(21) 09829413.5 (22) 15.05.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

(86) SG 2009/000174 15.05.2009<br />

(87) WO 2010/062262 2010/22 03.06.2010<br />

(30) 25.11.2008 SG 2008087<strong>31</strong><br />

(54) • VORRICHTUNG ZUR FESTSTELLUNG VON<br />

MIKROBRÜCHEN IN WAFERN UND VER-<br />

FAHREN DAFÜR<br />

• APPARATUS FOR DETECTING MICRO-<br />

CRACKS IN WAFERS AND METHOD<br />

THEREFOR<br />

• APPAREIL DE DÉTECTION DE MICROFIS-<br />

SURES DANS DES TRANCHES ET PRO-<br />

CÉDÉ ASSOCIÉ<br />

(71) Bluplanet Pte Ltd, 1 Bukit Batok Crescent No.<br />

09-48, WCEGA Plaza, Singapore 658064, SG<br />

(72) CHAN, Sok Leng, Singapore 5402<strong>31</strong>, SG<br />

(74) Wise, Stephen James, Murgitroyd & Company<br />

165-169 Scotland Street, Glasgow, G5<br />

8PL, GB<br />

(51) H01L 21/768 (11) 2 351 074 A1*<br />

H01L 23/48<br />

(25) En (26) En<br />

(21) 09764944.6 (22) 13.10.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/060434 13.10.2009<br />

(87) WO 2010/045187 2010/16 22.04.2010<br />

(30) 16.10.2008 US 25<strong>31</strong>21<br />

(54) • HALBLEITERSUBSTRATE MIT UNITÄREN<br />

DURCHGANGSLÖCHERN UND DURCH-<br />

GANGSLOCHANSCHLÜSSEN UND DIES-<br />

BEZÜGLICHE SYSTEME UND VERFAHREN<br />

• SEMICONDUCTOR SUBSTRATES WITH<br />

UNITARY VIAS AND VIA TERMINALS, AND<br />

ASSOCIATED SYSTEMS AND METHODS<br />

• SUBSTRATS SEMI-CONDUCTEURS À<br />

TROUS D'INTERCONNEXION UNITAIRES<br />

ET BORNES DE TROU D'INTERCONNE-<br />

XION, ET SYSTÈMES ET PROCÉDÉS<br />

ASSOCIÉS<br />

(71) Micron Technology, Inc., 8000 South Federal<br />

Way, P.O. Box 6, Boise, ID 83707-0006, US<br />

(72) KIRBY, Kyle, K., Eagle, ID 83616, US<br />

PAREKH, Kunal, R., Boise, ID 83712, US<br />

<strong>31</strong>8<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>31</strong>/<strong>2011</strong>) 03.08.<strong>2011</strong><br />

(74) Small, Gary James, Carpmaels & Ransford<br />

One Southampton Row, London WC1B 5HA,<br />

GB<br />

H01L 21/8242 → (51) H01L 27/108<br />

(51) H01L 21/8247 (11) 2 351 075 A1*<br />

G11C 16/04 H01L 27/115<br />

H01L 29/788 H01L 29/792<br />

(25) En (26) En<br />

(21) 09816026.0 (22) 25.08.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) JP 2009/065139 25.08.2009<br />

(87) WO 2010/035609 2010/13 01.04.2010<br />

(30) 26.09.2008 JP 2008248350<br />

(54) • NICHTFLÜCHTIGER HALBLEITERSPEI-<br />

CHER<br />

• NON-VOLATILE SEMICONDUCTOR STO-<br />

RAGE DEVICE<br />

• DISPOSITIF DE STOCKAGE À SEMI-<br />

CONDUCTEURS NON VOLATIL<br />

(71) Kabushiki Kaisha Toshiba, 1-1 Shibaura 1chome,<br />

Minato-ku Tokyo 105-8001, JP<br />

(72) ITAGAKI, Kiyotaro, Tokyo 105-8001, JP<br />

IWATA, Yoshihisa, Tokyo 105-8001, JP<br />

TANAKA, Hiroyasu, Tokyo 105-8001, JP<br />

KIDOH, Masaru, Tokyo 105-8001, JP<br />

KATSUMATA, Ryota, Tokyo 105-8001, JP<br />

KITO, Masaru, Tokyo 105-8001, JP<br />

AOCHI, Hideaki, Tokyo 105-8001, JP<br />

NITAYAMA, Akihiro, Tokyo 105-8001, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastraße 4, 81925 München, DE<br />

H01L 21/8247 → (51) H01L 27/115<br />

(51) H01L 23/12 (11) 2 351 076 A2*<br />

H01L 21/20 B81B 7/00<br />

(25) En (26) En<br />

(21) 09826887.3 (22) 16.11.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) US 2009/064509 16.11.2009<br />

(87) WO 2010/057068 2010/20 20.05.2010<br />

(88) 12.08.2010<br />

(30) 16.11.2008 US 115101 P<br />

16.11.2009 US 618846<br />

(54) • VERFAHREN UND VORRICHTUNG ZUR<br />

WAFERBONDUNG MIT VERBESSERTER<br />

WAFERVERBINDUNG<br />

• METHOD AND APPARATUS FOR WAFER<br />

BONDING WITH ENHANCED WAFER<br />

MATING<br />

• PROCÉDÉ ET APPAREIL DE LIAISON DE<br />

PLAQUETTE À CONNEXION DE PLA-<br />

QUETTE AMÉLIORÉE<br />

(71) Süss MicroTec Lithography GmbH, Schleissheimer<br />

Strasse 90, 85748 Garching, DE<br />

(72) GEORGE, Gregory, Sunnyvale, CA 94085, US<br />

(74) Vossius & Partner, Siebertstrasse 4, 81675<br />

München, DE<br />

H01L 23/29 → (51) C08J 3/24<br />

H01L 23/48 → (51) H01L 21/768<br />

H01L 23/485 → (51) B81B 7/00<br />

H01L 23/485 → (51) G06K 19/077<br />

(51) H01L 23/498 (11) 2 351 077 A1*<br />

H01L 21/48<br />

(25) En (26) En<br />

(21) 09744469.9 (22) 21.10.2009

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