29.04.2015 Views

ITT - Index of

ITT - Index of

ITT - Index of

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

GENERAL INFORMATION <strong>ITT</strong>54H/74H SERIES TTL FAMILY<br />

Note 7<br />

For all devices not more than one output to be<br />

shorted at any time. Open collector devices; no<br />

parameter for -ISC.<br />

Note 8<br />

Typic,!I limits are at ambient temperature. T A<br />

25°C and VCC = 5V.<br />

A.C. TESTS<br />

Testing <strong>of</strong> propagation delays is carried out using<br />

the typical switching load circuits shown below.<br />

These load circuits are designed to simulate full fanout<br />

loading. An oscilloscope with high impedance<br />

probes and having a bandwidth <strong>of</strong> at least 100 MHz<br />

is suitable for these measurements.<br />

TYPICAL SWITCHING TEST LOAD CIRCUITS<br />

For totem pole outputs:<br />

DEVICEO'P<br />

'~O-~-'~"~~~~~IM~IM----~<br />

Diodes are type 1 N4148 or equiv.<br />

The values <strong>of</strong> CL and RL are quoted in the data<br />

sheets. Value <strong>of</strong> CL includes probe and jig<br />

capitance.<br />

The characteristics <strong>of</strong> the pulse generator used at<br />

the input <strong>of</strong> the device are stated in the data sheets.<br />

Typical characteristics are: VOUT = 3V; Rise time.<br />

tr. = Fall time. tf. = less than 7 ns; Zo = 50; Pulse<br />

Repetition Frequency. P.R.F. = 1 MHz; Pulse width<br />

for gate. tp = 500 ns.<br />

Waveforms<br />

BV /.-------\INPUT<br />

I . I<br />

I . I k- '•.-.j<br />

I I<br />

I I I ;.. -~-- ___ _-,90,),.<br />

50%<br />

"5V~\-----~PUT + -- t 10%<br />

I I I I I II<br />

'~ \.- -.j ~+ -tt"r-1'0f4-<br />

CIRCUIT DIAGRAM <strong>ITT</strong>74HOO GATE<br />

r-----~~---------1~VCC<br />

OUTPUT<br />

For open collector outputs:<br />

OEYICE'~/P, RL Yee<br />

I C<br />

~ ,<br />

-..<br />

L<br />

OUTPUT<br />

I ,<br />

1\<br />

I,<br />

470!l.<br />

4kfi<br />

GND<br />

COMPONENT VAWES ARE NOMINAL<br />

The d.c. operation <strong>of</strong> this circuit is more readfly<br />

understood if the multiemitter transistor (M ET) connecting<br />

the inputs is considered equivalent to a<br />

diode AND gate in series with an <strong>of</strong>fset diode connected<br />

to the base <strong>of</strong> transistor VTl. This is shown<br />

in Fig. 2. the emitter-base junctions <strong>of</strong> the MET<br />

forming the input diodes and the collector base<br />

junction forming' the <strong>of</strong>fs~t diode.

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!