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2N5219<br />

GENERAL PURPOSE NPN SILICON TRANSISTOR<br />

Package: To-92<br />

ABSOLUTe MAXIMUM RATINGS<br />

Characteristic<br />

Unit<br />

ColiectorcEmitter Voltage .uuu •••••• __ ••• u •••••••• 15 Vde<br />

Collector-Base Voltage ..............•.............•... 20 Vde<br />

Emitter-Base Voltage ........•......................... 3.0 Vde<br />

Collector Current· Continuous ................ 100 mAde<br />

Total Device Dissipation @T A = 250 C ....... 310 mW<br />

Derate above 250 C ......................... 2.81 mW/oC<br />

Operating and Storage Junction<br />

Temperature Range .......•............. -55 to +135 0c<br />

Thermal Resistance, Junction<br />

to Ambient .............•.................. ; .. 0.357 oC/mW<br />

ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)<br />

Symbol Min Max Unit Conditions<br />

BV CEO 15 - Vde IC = 1.0 mAde, I B = 0<br />

BV CBO :.!u vae IC lUuuAae,IE u<br />

BV EBO 3.0 Vde IE = 100 uAde, IC - 0<br />

ICBO<br />

lEBO<br />

- 100 nAde V cB ,- 10 Vde, IE - 0<br />

- 500 nAde V BE - 2.0 Vde, IC - 0<br />

hFE 35, 500 - IC .:. 2.0 mAde, V CE - 10 Vde<br />

VCE(sat) - 0.4 Vde IC - 10 mAde,l B = 1.0 mAde<br />

VBE(sat) - 1.0 Vde IC -10 mAde,I B ':' 1.0 mAde<br />

fT 150 - MHz IC - 10 mAde, V CE - 10 Vde<br />

C eb - 4.0 pF V CB -10 Vde, IE - 0, f -1.0 MHz<br />

h fe 35 1500 - IC - 2.0 mAde, V CE 10 Vde, f<br />

1.0 kHz<br />

9-104

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