ITT - Index of

MPS2713, MPS2714
GENERAL PURPOSE LOW-LEVEL NPN SILICON SWITCHING TRANSISTOR
Package: To-92
ABSOLUTE MAXIMUM RATINGS
Characteristic
Unit
Collector-Base Voltage ....._..... __.__ .._...._..... __.. 18 Vdc
Collector-Emitter Voltage __________ . _________________ . 18 Vdc
Emitter-Base Voltage ______________ . ___________________ . 5_0 Vdc
Collector Current ______________ . _________ . __________ . 200 mAdc
Total Device Dissipation @ T A = 600 C _______. 210 mW
Total Device Dissipation @TA = 250 C ________ 310 mW
Derate above 250 C _________._____________. 2.81 mW/oC
Thermal Resistance, Junction
to Ambient _________________ . _______ ._. ______ . 0.357 0C/mW
Junction Operating Temperature _________ ._. _____ 135 DC
Storage Temperature Range ____ . _______ . -55 to +135 DC
ELECTRICAL CHARACTERISTICS (T A = 250C unless otherwise noted)
Symbol Min Typ Max Unit Conditions
ICBO
- - 0.5 uAdc V CB = 18 Vdc, IE = 0
- 15 V CB 18 Vdc, IE - 0, T A - 1000C
lEBO - - 0_5 uAdc V EB - 5 Vdc, IC = 0
hFE 30 60 90 IC = 2 mAdc, V CE - 4.5 Vdc
MPS2713
75 150 225 MPS2714
VCE/sat)
- 0.16 0.3 Vdc IC - 50 mAdc,l B = 3 mAdc
VBE/sat)
0.6 0.75 1.3 Vdc IC '50 mAdc, IB ~;:s mAdc
h fe ;:su .1:lU IC 2 mAdc, V CE - 4.5 Vdc,f 1 kHz
MPS2713
80 - 300 MPS2714
fT - 250 - MHz IC = 10 mAdc, V CE - 10 Vdc, f - 100 MHz
Cob 2.5 pF V CB 10 Vdc, IE 0, f - 100 kHz
hie 3000 ohms IC 0.5 mAdc, V CE . 1 Vdc, f 1 kHz
td 7_0 ns Delay Time IC - 10 mA, IB1 3mA,
\
6.0 ns Rise Time· V CC 10V
ts I'" ns Storage Time IC 10 mA, IB1 3mA,
t f l:1.U ns Fall Time I B2 - 1 mA, V CC = 10 V
9-12