ITT - Index of

_
T
1
2N2217, 2N2218, 2N2219
m .L_____ SILICON GENERAL PURPOSE TRANSISTORS _
SEMICONDUCTORS
GENERAL PURPOSE NPN SILICON
PLANAR EPITAXIAL TRANSISTORS
• Low VCE (sat), 0.4V@ Ic = 150mA
It High Frequency, fT = 250 MHz @ I c = 20mA
• Wide Useful Current Range, 0.1 to 500mA
The ITT 2N2217-19 are NPN silicon planar epitaxial
general purpose transistors for applications at
current ranges from 0.1 to 500mA. Low saturation
voltage and fast switching times make the
2N2217-19 ideal for core driving. The flat grain
over a wide current range gives good linearity in
amplifier circuits. High break~own voltage allows
large signal swing in switching and amplifier circuits.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
UNITS
Collector-to-Base Voltage....................................... 60 Volts
Collector-to-Emitter Voltage (open base)............... 30 Volts
Emitter-to-Base Volta·ge.......................................... 5.0 Volts
Collector Current (continuous)................................ 800 mA
Junction Temperature (operating) ................ -65 to +175 oC
(storage) ................... -65 to +300 ~C
Total Power Dissipation @ Tc = 250C .................... 3.0 Watts
(derate 20mW/~C above 25~C)
Total power Dissipation @ T A = 25oC..................... 0.8 Watts
(derate 5.33 mW/~C above 25 oC)
ELECTRICAL CHARACTERISTICS @ 25 c C unless otherwise noted
Symbol Min. Max. Unit Conditions
hFE (1)
hFE
Ic= 150mA, VCE= 10V
20 60 2N2217
40 120 2N2218
100 300 2N2219
Ic= 150mA, VCE= IV
10 2N2217
20 2N2218
50 2N2219
Ic= 500mA, VCE= 10V
20 2N2218
30 2N2219
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