ITT - Index of

TYPEE 4E20-4E200
ELECTRICAL CHARACTERISTICS ~ 25'C unless otherwise noted
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Is
(forward switching current)
I'k (OFF state)
(forward leakage current)
VON
(forward voltage drop)
125 /lA
250 /lA
15 /lA
1.4 V
1.2 V
-60 to +125'C
75% of nom. Vs
If = 70 mA~lJVs 80, 100, 200
If = 70 mA@Vs 20,30,40,50
roo
(dynamic forward impedance)
too
0.1
"-
2.0 II
/lsec
If = 70 mA
+200V
.,,"
t :zvoTn f""' .v
'0,." TEST CI~CUIT
toff
5
/lsec
+300V
'"
~ 2V.rn..~ OVT j ~:~
~onpulSE G(~~ 390 2~~lon ., I
VAR PULSEWIDT>t Ion U
~~~~~FA:~i:R~A:TT~~~~ 'OFF TEST CI~CUIT
..
HOW THE 4-LAYER DIODE OPERATES
The voltage-current characteristic for the
4-layer diode shows three essential operating
regions:
I-"off" or high resistance state
II-transition or negative resistance
state
1I1-"on" or low resistance state
This curve is shown on a very expanded
scale (non-linear). for illustration purposes
only. Note that as the voltage
rises and reaches the switching voltage
(Vs), the device begins to switch "on."
The current at this point (Is) is typically
several microamperes. The device switches
because of an internal feedback mechanism
allowing the diode to pass a steadily
increasing current as the voltage decreases
(negative resistance state, Region II).
When "on" (Region III), the 4-layer
diode passes a current which is limited
principally by the external circuit.
In the "on" state, the device has a
dynamic resistance of less than a few
ohms and a voltage drop of about one
volt. As long as sufficient current is passed
by the cirCUit, the device will remain in the
"on" condition. At the point on the curve
marked Ih, the clfcuit is passing just
enough current to keep the device in the
"on" condition. If the current drops below.
Ih the diode ·switches back .to the high
resistance or "off" condition.
Rate Effect
In its "off" condition the device will pass
a capacitive current in response to a
.sharply rising voltage wave. If the rise
rate of this voltage wave is large enough
(usually 10 .to 100 volts / /lS), switching
occurs below the DC switching voltage.
+1
m NEGATIVE
RESISTANCE
REGION-
_ - } EXPANDED
I IT SCALE
-V~~~~~-~-~ +v
Vs
V-I CHARACTERISTICS
TERMS AND SYMBOLS
V, Switching Voltage-Closest point to peak
voltage in Region·1I where slope of V-I
curve is -330!!. This definition is adopted
because of instrumentation requirements
I, Switching Current-Current which flows
through the diode at Vs
Ih Holding Current-The closest point to the
minimum voltage in Region II where the
slope of the V-I curve is -100!!
Vh Holding Voltage-Voltage across the diode at Ih
Ip Peak Current-Current which the diode can
pass when in Region III; duration limited
to 50 M
Roo ON Resistance-Slope of V-I curve measured
at currents> Ih
I'k Leakage Current-Measured in Region I at
75% Vs
V,b Reverse Breaker Voltage
El
DERATING CURVES
PULSE DERATING CURVE
~
50 "I.....
a: 50°C MAX
w 20
I~
a.
'"
10 I "-V
~
I
.... 05 ,
~
a:
a: 0.2
=>
u 01
5 '" 0.05
a.
"'"
~
~ 002
:> 0.01
0.001 0.01 01
DUTY FACTOR
(, PULSE WIDTH X REPETITION FREOUENCY)
POWER DERATING CURVE
125
1\
'i
.5 100
\
z
0
;:: 75
-~
it
:;j
0
50
a:
~
0 25
a.
1\
~
\
50 100
AMBIENT TEMPERATURE (OC)
15-4