ITT - Index of

ITT
MPS834
HIGH-SPEED NPN SILICON SWITCHING TRANSISTOR
- SEMICONDUCTORS '---~~
Package: To-92
NPN SILICON HIGH-SPEED
SWITCHING TRANSISTORS
50 5.0 II;
ABSOLUTE MAXIMUM RATINGS
Characteristic
Unit
Collector·Emitter Voltage ............................. 30 Vdc
Coliector·Base Voltage ................................. 40 Vdc
Emitter·Base Voltage ................................... 5.0 Vdc
Collector Current .................................... 200 mAdc
Total Device Dissipation @ T A = 25°C ........ 310 mW
Derate above 25°C ......................... 2.81 mW/oC
Totql Device Dissipation @ T C = 25°C ........ 500 mW
Derate above 250C ......................... 4.55 mW/oC
Operating and Storage Junctjon
Temperature Range .................... ·55 to + 1350C
Figure 1 - Turn-On and Turn·Off
Time Measurement Circuit
+'0 Vdc
Figure 2 - Charge Storage Time
Constant Measurement Circuit
ELECTRICAL CHARACTERISTICS (T A = 250e unless otherwise noted)
Symbol Min Max Unit Conditions
BV CBO 40 - Vdc IC = 10uAdc, IE = 0
BV EBO 5.0 Vdc IE luuAac,I C U
ICES
ICBO
- 10 uAde V CE - ;j0 Vde, V BE 0
- 0.5 uAde V CB - 20 Vde, IE 0
hFE * 25 IC IU mACc, VCE 1.0 Vdc
V CE(sat)*
V BElsat)*
0.25 Vde IC IU mACc, IB 1.U mAde
- 0.4 IC bO mAdc, IB b.U mAde
- 0.9 Vdc IC - 10 mAde, IB - 1.0 mAdc
fT 350 - MHz IC - 10 mAde, V CE - 20 Vdc, f - 100 MHz
Cob - 4.0 pF. V CB - 10 Vde, IE - 0, f - 100 kHz
ton - 16 ns Turn·On Time IC - 10 mAdc, IBl - ;j.O mAde,
I B2 = 1.0 mAdc See Figure 1
toff - 30 ns Turn·Off Time Ie - 10 mAde, IBl 3.0 mAdc,
I B2 = 1.0 mAde See Figure 1
t
s
- 25 ns Storage Time IC 10 mAde, IBl IB2 = 10 mAde
See Figure 2
·Pulse Test: Pulse Width ~ 12 ns, Duty Cycle.~ 2.0%.
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