ITT - Index of

2N2221, 2N2222
SILICON GENERAL PURPOSE TRANSISTORS
ELECTRICAL CHARACTERISTICS @ 25 0 C unless otherwise noted
Symbol Min, Max, Unit Conditions
nFE
Ic= 10mA, VCE= 10V
17
35 2N2221
75 2N2222
Ic- 1mA, VCE= 10V
12 2N2220
25 2N2221
50 2N2222
Ic- 0.1mA, VCE= 10V
20 2N2221
35 2N2222
VeE (sat) , 0.4 Vdc I C= 150mA, I B= lbmA
1.6 Vdc I C = 500mA, I B= 50mA
VBE (sat) , 1.3 Vdc Ic= 150mA,I B= 15mA
2.6 Vdc I c= 500mA, I B= 50mA
ICBO 10 nA VCB=. 50V, IE= 0
10 A VCB= 50V,IE= 0, T = 150oC
lEBO 10 nA VEB=3V,lc=0
IT 250 MHz I C = 20mA, V CE= 20V
Cob 8 pI VCB= 10V,I E= 0
Re (h,'e) , 60 Ohms I c= 20mA; V CE= 20V, f = 300 MH;
BVCBO 60 Vdc Ic=10 A,IE=O
VCEO (sust) , 30 Vdc I c= 10mA, Is= 0
BVESO 5 vac I E - 10 A. I C - 0
NOTES: 1, Pulse Measurement: width 300 sec, duty cycle 2%.
2. Real part of Common~Emitter high frequency input impedanC?e.
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