ITT - Index of

2N2368, 2N2369
SILICON SWITCHING TRANSISTORS
TYPICAL CHARACTERISTICS. continued
4
E
:iii 10
~
z
RISE TIME VERSUS TURN ON BASE
CURRENT AND COLLECTOR CURRENT
Vee- 30V I -L
~
~
0
~~
u
w
,0·
~ 1.0
~ .. et.
z
'l-~
-
0
z
~
0
~
I
11.0 10 100
COLLECTOR cuRRENT (lei rnA
I
I,
~
/
/1
- 1,.0Y V/
SWITCHING TIMES
VERSUS AMBIENT TEMPERATURE
I~' 16m. 1 /'j
12 ~VCC=3.0V'
< 10
~5
In
~ 10
0
.; 5
~
'" 2
~
g 10
/' I,
e
.,// /
6 'd
4 __ /
r- - I.L
I,
2
)-
/
/
~50 0 50 100 150
AMBIENT TEMPERATURE (TA ) ·C
CONTOURS OF CONSTANT GAIN
BANDWIDTH PRODUCT (f I
~oJ
$0 "'c '/11
I \ \ \ ~ V r//J
600mc
:\ '!\ "I II
\ ~ / r;
~ 450m7
~
"j ",0
05" '"
C
,0
r- .-!1'
0.2
.015 r-25°C
.01 1 2 5 10 20 50 100
COLLECTOR CURRENT (Ie'
~
~
-~-5.0
H,t! I / II
r-l ,b
IL /
!
0
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>
- -4,0
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if
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ffi
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8
II II i/,c",omA
0 0
VCC· 3 .OV
20 50 10 20
TURN ON BASE CURRENT U SI ) mA
'"
DELAY TIME VER~US BASE­
EMITTER OFF VOLTAGE AND
TuRN ON BASE cuRRENT
4.0-
EMITTER TRANSITiON ANO ul:~ '"'I;
CAPACITANCES VERSUS REvERSE
alAS vOLTAGE
~et-~J
3.0:::::
f"
COb '£"'0
2.0
1.0
0
0
10
1.0
r-- '-
0.5 1.0 50 10
REVERSE BIAS VOLTAGE VOLTS
COLLECTOR cuTOFF CURRENT
VERSUS AMBIENT TEMPERATuRE
VCB .. 20V
O.lV /
V
/
I/
0 0 50 75 100 125
AMBIENT TEMPERATURE (T A ) 'C
50
<
20 ""-
In
,. '" 10
>=
'"
~ 5.0
~
~ 2.0
L.VCES
1.0 1.0
In
'" 90
~
~
0
~
60
;!
ffi
i;!
it 70
I
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..
E
~ •• GO
:&'1
~
-2'
-20
a -I'
"'
~
~
~
0
-10
~ -5
i?
SWITCHING TIMES VERSUS
COLLECTOR CURRENT
7g~~:~~~,~
"- 1\ 1,/
I,
.~
'" r-: d
20 5.0 10 20 50 100
COLLECTOR CURRENT (lc) mA
LOWER LIMITING
VOLTAGE VERSlIS
SOURCE RESISTANCE
le"':'~IA
Pulse
\
1\
\
\
LVCEO- -
'" -- f-
IK
10K
SOURCE RESISTANCE (RS}OHMS
STORAGE TIME vERSUS TURN ON
AND TURN OFF BASE CURRENTS
I I /
_1.0\'
J1 I
V V
V
",QI- V
f- .r/
o~
I " II /
b[Lf- 7
~.~ -
{o'
-
II
1/ v- I I
V
Ic"'IOOm~_
VCC"'3.0V
0 0
5 10 15 20 25
TURN ON BASE CURRENT (lBI) mA
9-50