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MPS6591®<br />

NPNSI LICON AMPLI FIER TRANSISTOR<br />

Package: To-92<br />

High Voltage _________ BV CEO = 80 V (Min) MPS6590<br />

Low Noise _______ .. _........ NF = 3.0 dB (Typ) Wideband<br />

ABSOLUTE MAXIMUM RATINGS (Note 1)<br />

Characteristics<br />

Unit<br />

Storage Temperature ........................ -55 to +150 °C<br />

Operating Junction Temperature ...... ·55 to +150 °C<br />

Total Dissipation (Notes 2 and 3)<br />

at 250C Case Temperature ........................ 1.0 W<br />

at 250C Ambient Temperature ................ 625 W<br />

at 700C Ambient Temperature ............... .400 W<br />

Collector to Base Voltage ................................ 60 V<br />

Collector to Emitter Voltage (Note 4) ............. 50 V<br />

Emitter to Base Voltage ................................. 4.0 V<br />

DC Collector Current .................................. 250 mA<br />

ELECTRICAL CHARACTERISTICS (250C Free Air Temperature unless otherwise noted)<br />

Symbol Min Typ Max<br />

BV CEO 50<br />

BV CBO 60<br />

BV EBO 4.0<br />

ICBO<br />

ICBO<br />

100<br />

hFE 40<br />

VCE(satl<br />

0.6<br />

C cb 12<br />

C eb 50<br />

h. Ie<br />

1.4<br />

h<br />

re<br />

0.8<br />

h fe 2.0<br />

hoe 75<br />

NF 3.0<br />

NOTES:<br />

(1) These ratings are limiting values above which the<br />

serviceability <strong>of</strong> any individual semiconductor<br />

device may be impaired.<br />

(2) These are steady state limits. The factory should<br />

be consulted on applications involving pulsed or<br />

low duty cycle operations.<br />

Unit<br />

Test Conditions<br />

Volts IC = 1.0 mA, IB = 0<br />

Volts IC - 100uA, IE = 0<br />

Volts IE - 100uA, IC - 0<br />

nA V CB -50V,I E -0<br />

nA V CB 30V,I E -0<br />

Volt<br />

pF<br />

pF<br />

kO<br />

X 10-4<br />

umhos<br />

dB<br />

I C =10mA,V CE -10V<br />

I C =10mA,I B -1.0mA<br />

V CB = 10 V, IE - 0, f - 100 kHz<br />

V BE = 0.5 V, IC - 0, f - 100 kHz<br />

Ie - 10 mA, VeE - 5.0 V, f - 1.0 kHz<br />

Ie -10 mA, VeE - 5.0 V, f= 1.0 kHz<br />

Ie - 10 mA, VeE - 10W, f = 30 MHz<br />

Ie -10mA, VeE - 5.0V, f-1.0 kHz<br />

Ie = 100uA, VeE - 5.0V,<br />

f = 10 Hz to 15.7 kHz, Rs =4kO<br />

(3) These ratings give a maximum junction temperature<br />

<strong>of</strong> 1500 C and junction to case thermal<br />

resistance <strong>of</strong> 1250 C/Watt (derating factor <strong>of</strong> 8.0<br />

mW/oC); junction to ambient thermal reSistance<br />

<strong>of</strong> 2000 C/Watt (derating factor <strong>of</strong> 5.0 mW/0C).<br />

(4) Rating refers to a high current point where<br />

cOllector to emitter voltage is lowest.<br />

(5) Pulse conditions: length = 300 us; duty cycle<br />

= 1%.<br />

9-26

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