ITT - Index of

ITT
MPS-A55
PNP SILICON AMPLIFIER TRANSISTOR
- SEMICONDUCTORS ------~
Package: To-92
ABSOLUTE MAXIMUM RATINGS
Characteristic
Unit
Collector-Emitter Voltage ....... 60 Vdc
Collector-Base Voltage ............ 60 Vdc
Emitter-Base Voltage ............... 4.0 Vdc
Collector Current - Continuous 500 mAdc
Total Device Dissipation
@T A = 25 0 C ...................... 500 mW
Derate above 250 C ............. 4.54 mW/oC
Total Device Dissipation
@T C =250 C ...................... 800 mW
Derate above 250 C ........... 7.27 mW/oC
Operating and Storage Junction
Temperature Range ............... -55 to +135 °c
Thermal Resistance, Junction
to Case .................................. 0.137 °C/mW
Thermal Resistance, Junction
to Ambient ........................... 0.220 °C/mW
ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)
Symbol Min Typ Max Unit Conditions
BV CEO 60 -, - Vde IC = 1.0 mAde, I B = 0
BV EBO ' 4.u Vde IE = 100uAde,I C = 0
ICBO l.OU nAde VCS = 60 Vde,IE 0
hFE 50 150 IC = 10 mAde, V CE - 1.0 Vde
50 125 - IC = 100 mAde, V CE '= 1.0 Vde
VCE(sat)-
VBE(sat)
- 80 - IC = 350 mAde, V CE ='1.0 Vde
- 0.09 0.25 Vde IC = 100 mAde, IS - 10 mAde
0.71i Vde IC - 100 mAde, IS = 10 mAde
VSE(on) 0.13 1.2 Vde IC = 100 mAde, V CE - 1.0 Vde
tT cU 10u MHz IC -100 mAde, VCE - 1.0 Vde,
f=100MHz
Cob - 6.5 - pF V CB = 10 Vde, IE = O,f 100 kHz
C ib 20 pF VSE = 0.5 Vde, IC 0, f 100 kHz
9-6 '