ITT - Index of

ITT
. LOW-LEVEL SWITCHING TRANSISTORS
MPS706, MPS706A
HtGH-SPEED NPN SI LICON
- .---~~
SEMICONDUCTORS
Package: To-92
NPN SILICON HIGH-SPEED
LOW-LEVEL SWITCHING
TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-E mitter Voltage
MPS706 I MPS706A
(R BE = 10 Ohms) 20
Collector-Base Voltage 25
Emitter-Base Voltage 3.0 I 5.0
Total Device Dissipation
@T A = 250 C 310
Derate above 25u C 2.81
Operating and Storage Junction
Temperature Range I -55 to +135
I
Unit
Vdc
Vdc
Vde
mW
mW/oC
oC
P ... IU VOlt.
~70 AV
I"t.rnol ResI.tonCt
~o O"'m_ Z.OI!
a '11_ - - - O---'l.IVV-'lN'v--tI
-2.0'11
Figure 1 -
Figure 2 -
Switch!ng Time Test Circuit
PulMVOIt,
Intung! Rtsl"onct
50 Ohm, 350
Storage Time Test Circuit
ELECTRICAL CHARACTERISTICS (T = 250 C unless otherwise noted)
A
Symbol Min Max Unit Conditions
BV CEO * 15 - Vdc IC = 10 mAde, IB = 0
BV CER 20 - Vdeq IC - 10 mAde, RBE - 10 Ohms
I CBO - 0.5 uAde V CB -15Vde,I E -0
lEBO
- 10 uAde V EB - 3.0 Vde, IC - 0
hFE"
20 - - IC - 10 mAde, V CE = 1.0 Vde
MPS706
20 60 MPS706A
- 0.6 Vde IC = 10 mAde, IB = 1.0 mAde
V CE (sat)"
V BE (sat) "
- 0.9 Vde IC - 10 mAde, IB - 1.0 mAde
MPS706
0.7 0.9 MPS706A
fT 200 - MHz IC = 10 mAde, V CE = 15 Vde, f = 100 MHz
Cob - 6.0 pF V CB - 10 Vde, IE = 0, f - 100 kHz
rb - 50 Ohms IE - 10 mAde, V CE - 15 Vde~ f - 300 MHz
t on**
- 40 ns Turn-On Time See Figure 1
toff" *
75 ns Turn-Off Time See Figure 1
TS** - 60 ns Charge Storage Time Constant "* See Figure 2
MPS706
- 25 MPS706A
'Pulse Test: Pulse Width === 12 ns, Duty CYCle£ 2.0%.
"Measured with Tektronix Type R Plug-In (50-Ohm Internal Impedance) and circuits shown.
9-8