ITT - Index of

ITT
2N708
SILICON SWITCHING TRANSISTOR
- -----
SEMICONDUCTORS
HIGH-SPEED NPN SILICON PLANAR
EPITAXIAL SATURATED SWITCHING
TRANSISTOR
For Improved Performance See ITT 2N2369A.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Collector-to-Base Voltage ...................................... .
Collector-to-Emitter Voltage .................................. .
Emitter-to-Base Voltage ......................................... .
Operating Junction Temperature .......................... ..
Storage Tem perature ............................................. .
PD@Tc = 25~C ...................................................... .
PD@ TA = 25 oC ....................................................... .
40
15
5
200
-65 to +200
1.2
.36
UNITS
Volts
Volts
Volts
oC
vC
Watts
Watt
ELECTRICAL CHARACTERISTICS (25 oC free air unless otherwise noted)
Symbol Min. Max. Unit Conditions
BVcBO 40 Vdc Ic= WA
LVCER 20 Vdc I e= 3mA pulsed, R BE= 10&1
LVCEO 15 Vdc I C = 30mA pulsed
BVEBO 5 Vdc I E= 10)lA
hFE 30 120 Ic= 10mA, VCE= 1V
hFE 15 Ic= 0.5mA, VCE= 1V, T A= -55 oC
hFE 15 I c= 10mA, V CE= 1V
VeE (sat) .40 Vdc I c= 10mA, I B= 1.0mA
VCE (sat) .40 Vdc I c= 7mA, I B= .7mA, T A= +125 0 C
VBE (sat) .72 .80 Vdc I c = 10mA, I B = 1.0mA
VBE (sat) .90 Vdc I c= 10mA, I B= 1.0mA, T A= -55 oC
ICBO 25 nA V CB= 20V
ICBO 15 )lA VCB = 20V, TA = +150oC
lEBO 0.1 )lA V EB= 4V
ICEX 10 )lA V CE= 20V,V EB= .25V, T A= 125 0 C
Cob 6 pF VCB= 10V
"hfe 3 I c= 10mA, V CE= 10V, f = 100MHz
rb 50 ohms I c= 10mA, V CE= 10V, f = 300MHz
Ts 25 ns Ic= IB1= IB2= 10mA
ton 40 ns I C= 10mA, I B1 = 3mA, V EB= 2V
toff 75 ns I c= 10mA, I B1 = 3mA, I B2= 1mA
NOTE: Pulse width :='300f,lsec. duty cycle :='2%.
9-30