ITT - Index of

ITT726
TEMPERATURE-CONTROLLED
DIFFERENTIAL PAIR
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'CURRENT GAIN AS A FUNCTION
OF COLLECTOR CURRENT
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800 ~~J~!~:~.I~'C -
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16
SUPPLY CURRENT AS A FUNCTION
OF AMBIENT TEMPERATURE
Vs • !l~V
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TYPICAL ~
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FOR ITT726-1 i , "-
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ELECTRICAL CHARACTERISTICS FOR ITT726-5
unless otherwise specified)
(0°C:(TA:(+85°C, Vs =±15V, RadJ=75kfl
Parameter Min. Typ. Max. Units Conditions
Input Offset Voltage 1.0 3.0 mV 10,uA:(1c:(1 OOp.A
VcE =5V, Rs:(50fl
Input Offset Current 10 100 nA Ic=10p.A, VcE =5V
Input Offset Current 50 400 nA Ic-100p.A, VcE -5V
Average Input Bias Current 50 300 nA Ic-10p.A, VcE -5V
Average Input Bias Current 250 1000 nA Ic-100p.A, VCE-5V
Offset Voltage Change 0.3 6.0 mV Ic=10,uA,5V:(VcE:(25V,
Rs:(100kfl
Offset Voltage Change 0.3 6.0 mV Ic=100p.A, 5V:(VCE:(25 V,
Rs:(10kfl
Input Offset Voltage Drift 0.2 2.0 p'vrc Ic=100p.A, VcE=5V
Rs:(50fl,
Input Offset Current Drift 10 pArC Ic=10p.A, VcE =5V
Input Offset Current Drift 30 pArC Ic=100p.A, VcE=5V
Supply Voltage Rejection Ratio 25 p.VIV Ic=100p.A, Rs:(50fl
Low-Frequency Noise 4.0 ,uVpp Ic-10p.A, VcE -5V
Rs:(50fl,
BW=0.001Hz to 0.1Hz
Broadband Noise 10 p.Vpp Ic=10p.A, VcE =5V
Rs:(50fl,
BW=0.1Hz to 10kHz
Long-Term Drift 5.0 p.V/week Ic=100p.A, VcE =5V
Rs:(50fl, TA=25°C
High-Frequency Current Gain 1.5 3.5 f-20MHz,
Ic=100p.A, VcE =5V
Output Capacitance 3.0 pF IE=O, VcB =5V
Emitter Transition Capacitance 1.0 pF IE-100p.A
Collector Saturation Voltage 0.5 1.0 V IB=100p.A, Ic=1mA
7-49