ITT - Index of

ITT
2N834
SILICON SWITCHING TRANSISTOR
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SEMICONDUCTORS
HIGH-SPEED NPN SILICON PLANAR
EPITAXIAL SATURATED
SWITCHING TRANSISTOR
For Improved Performance See ITT 2N2369.
2N834 ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
UNITS
Collector-to-Base Voltage..................................... 40 Volts
Collector-to-Emitter Voltage ................................. 25 Volts
Emitter-to-Base Voltage........................................ 5 Volts
Operating Junction Temperature .......................... 175 oC
Storage Temperature .............................. -65 to +200 cC
Po@ Tc = 25 oC ..................................................... 1.0 Watt
Po@ TA = 25 c C ..................................................... 0.3 Watt
2N834 ELECTRICAL CHARACTERISTICS (25.C free air unless otherwise noted)
Symbol Min. Max. Unit Conditions
BVCBO 40 Vdc Ic= 100 A
BVCES 30 Vdc Ic= 10 A
BVEBO 5 Vdc I E= 100 A
hFE 25 Ic= 10mA, VCE= 1.0V
VeE (sat) 0.25 Vdc I c= 10mA, I B= 1.0mA
VeE (sat) 0.4 Vdc I c= 50mA, I B= 5.0mA pulsed
VBE (sat) 0.9 Vdc le= 10mA,IB= 1.0mA
leBo 0.5 A VeB= 20V
leBo 30 A VeB= 20V, T A= 150 0 C
Cob 4 pF VeB= 10V
hte 3.5 Ie = 10mA. VeE = 15V. f = 100MHz
s 25 ns I c- 10mA, I B1- I B2- 10mA
ton 35 ns I c= 10mA, I B1 = 3mA, I B2= 1mA
tott 75 ns I c= 10mA, I B1 = 3mA, I B2= 1mA
NOTE: Pulse width 300 sec, duty cycle 2%.
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