ITT - Index of

ITT
2N2221,2N2222
SILICON GENERAL PURPOSE TRANSISTORS
- -----
SEMICONDUCTORS
GENERAL PURPOSE HIGH-VOLTAGE
NPN SILICON PLANAR
EPITAXIAL TRANSISTORS
-Low VCE(sat). 0.4 V@ Ic = 150mA
_ High Frequency. IT = 250 MHz @ I C = 20mA
- Wide Useful Current Range. 0.1 to 500mA
The ITT2N2221-22 are NPN silicon planar epitaxial
general purpose transistors for applications at
current ranges from 0.1 to 500 mAo Low saturation
voltage and fast switching times make the
2N2221-22 ideal for core driving. The flat gain over
a wide current range gives good linearity in
amplifier circuits. High breakdown voltage allows
large signal swing in switching and amplifier circuits.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Units
Collector-to-Base Voltage....................................... 60 Volts
Collector-to-Emitter Voltage (open base)............... 30 Volts
Emitter-to-Base Voltage.......................................... 5.0 Volts
Collector Current (continuous)................................ BOO mA
Junction Temperature (operating) .............. -65 to + 175 oC
(storage) ................. -65 to +300 oC
Total Power Dissipation @ Tc = 25 0 C .................... 1.B Watts
(derate 12mW/oC above 25 o C)
Total Power Dissipation @ t A = 25 0 C .................... 0.5 Watts
(derate 3.33 mW/oC above 25 oC)
ELECTRICAL CHARACTERISTICS @ 25 0 C unless otherwise notea
Symbol Min. Max. UnlL Condition.
hFE'
I c= 150mA, V GE= 10V
40 120 2N2221
100 300 2N2222
I c= 150mA, V CE= IV
20 2N2221
50 2N2222
Ic= 500mA, VeE= 10V
20 2N2221
30 2N2222
9-40