ITT - Index of

2N5221
Package: To-92
LOW-POWER GENERAL PURPOSE PNP SILICON AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Characteristic
Unit
Collector-Emitter Voltage _________________ .__ ... __ .__ 15 Vde
Collector-Base Voltage ________________________________ .15 Vdc
Emitter-Base Voltage __________________________________ . 3.0 Vdc
Collector Current .......... __ ............. ____ .. __ ... 500 mAdc
Total Device Dissipation @ T A = 250C ....... 310 mW
Derate above 250C ................ ____ ...... 2.81 mW/oC
Operating and Storage Junction
Temperature Range .. ______ .... __ .. ____ -55 to +135 °c
Thermal Resistance, Junction
to Ambient ______ .. ______________ .. ____ .... ____ 0.357 0C/mW
ELECTRICAL CHARACTERISTICS (T A = 250C unless otherwise noted)
Symbol Min Max Unit Conditions
BV CEO 15 - Vdc IC = 10 mAde,l B = 0
BV CBO 15 - Vdc IC - 100uAdc,I E = 0
BV EBO 3.0 Vdc IE - 100uAdc,I C - 0
ICBO 100 nAoe v CB lUvoc,IE-O
lEBO 100 nAdc V BE = 3.0 Vdc, IC = 0
hFE 25 IC - 10 mAdc, v CE - 10 Vdc
30 600 IC = 50 mAdc, V CE = 10 Vdc
VCE(sat)
0.5 Vdc IC - 150 mAdc, IB - 15 mAdc
VBE(sat)
1.1 VdC IC 150 mAdc, IB 15 mAdc
fT 100 MHz IC = 20 mAdc, V CE - 10 Vdc
C cb - 15 pF V CB - 5.0 Vdc, IE - 0, f -1.0 MHz
h fe 30 1800 - IC 50 mAdc, V CE - 10 Vdc, f - 1.0 kHz
9-102