ITT - Index of

2N2219A
SILICON SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS continued
Parameter Min. Max. Unit Conditions
ICEX 10 nA V CE= 60V. V EB= 3V
IEBX 20 nA VEB= 3V. VCB= 60V
lEBO 10 nA VEB= 3V
Cob B pF VCB= 10V
Cib 25 pF VEB=0.5V
hIe 50 300 c= 1mA, V CE= 10V, f = 1KHz
hIe 75 375 C= 10mA. VCE= 10V, f= 1KHz
hIe 3 C = 20m A, V CE= 20, f = 100MHz
hie 2 B Kohms c= 1mA, VCE= 10V, f = 1KHz
hie 0.25 1.25 Kohms c= 10mA, V CE= 10V, f= 1KHz
hre B x10 ~4 c= 1mA, V CE= 10V, f = 1 KHz
hre 4 x10 ~4 c= 10mA, V CE= 10V, f = 1 KHz
hoe 5 35 mho C= 1mA, VCE= 10V, f = 1KHz
hoe 25 200 mho C= 10mA, V CE= 10V, 11 = KHz
Re(hie) 60 omhs c= 20m A, V CE= 20V, f = 300M Hz
rb'Cc 150 ps c= 20mA, V CE= 20V, f = 31.BMHz
N.F. 4 db c= 100 A, VCE= 10V, RG= 1K ,f = 1KHz
Ts 2.5 ns I c= 150mA, I B1= 15mA, V cc= 30V, VEB= 0.5V
td 10 ns I C = 150mA, I B1 = 15mA, V CC= 30V, VEB= 0.5V
tr 25 ns Ic= 150mA, I B1= 15mA, V cc= 30V, VEB= 0.5V
ts 225 ns I c= 150mA, I B1= I B2= 15mA, V CC= 30V
tl 60 ns I c= 150mA, I B1 = I B2= 15mA, V cc= 3DV
Note: Pulse width 30 sec, duty cycle 2%,
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