ITT - Index of

Package: To-92
2N5086, 2N5087
LOW-LEVEL, LOW-NOISE PNP SILICON AMPLIFIER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Characteristic
Unit
Collector-Emitter Voltage ........................... 50 Vdc
Collector-Base Voltage ................................ 50 Vdc
Emitter-Base Voltage ................................... 3.0 Vdc
Collector Current - Continuous ................. 50 mAde
Peak ......................... 100 mAde
Total Device Dissipation @ T A = 250 C ..... 310 mW
Derate above 250 C ........................ 2.81 mW/oC
Operating and Storage Junction
Temperatu re Range .................. -55 to + 135 0c
Thermal Resistance, Junction
to Ambient .................................. 0.357 0C/mW
ELECTRICAL CHARACTERISTICS T A = 250 C unless otherwise noted
Symbol Min Typ Max Unit Conditions
BV CEO 50 - - Vdc IC = 1.0 mAde, IB = 0
BV CBO 50 - - Vdc IC - 100 uAdc, IE - 0
ICBO
lEBO
10 nAdc VCB - 10 Vdc, IE 0
- - 50 V CB = 35 Vdc, IE = 0
- - 50 nAdc V BE - 3.0 Vdc, IC - 0
hFE 150 500 IC 10u UAdC, v CE O.U VdC
2N5086
250 - 800 2N5087
150 - - IC = 1.0 mAde, V CE = 5.0 Vdc
2N5086
250 - - 2N5087
150 - - IC = 10 mAde, V CE = 5.0 Vdc
2N5086
250 - - 2N5087
VCE(sat) - - 0.3 Vdc IC = 10 mAde, IB = 1.0 mAde
VBE(on)
fT
- - 0.85 Vdc IC - 1.0 mAde, V CE - 5.0 Vdc
40 120 - MHz IC = 500 uAdc, V CE = 5.0 Vdc,
f = 20 MHz
40 150 - 2N5087
2N5086
Cob - - 4.0 pF V CB = 5.0 Vdc, IE = 0, f = 100 kHz
h fe 150 - 600 - IC - 1.0 mAde, V CE - 5.0 Vdc,
f = 1.0 kHz
250 - 900 2N5087
2N5086
NF - - 3.0 dB IC - 20 uAdc, V CE - 5.0 Vdc,
RS = 10 k ohms, f = 10 Hz to
15.7 kHz 2N5086
- - 2.0 2N5087 ,
- 1.2 3.0 IC = 100 uAdc, V CE - 5.0 Vdc,
RS = 3.0 k ohmn, f = 1.0 kHz
2N5086
- 1.0 2.0 2N5087
,
9-101