ITT - Index of

ITT
2N3053
NPN SILICON SWITCHING AND
AMPLIFIER TRANSISTOR
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Package: TO-5
SEMICONDUCTORS
NPN SILICON SWITCHING
AND AMPLIFIER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Characteristics
Unit
Collector-Emitter Voltage .................................... 40 Volts
Collector-Base Voltage ........................................ 60 Volts
Emitter-Base Voltage ............................................. 5 Volts
Collector Current - Continuous .......................... 700 mA
TotalOevice Dissipation @ T C = 25°C ............. 5 Watts
Derate above 25°C ................................. 28.6 mW/oC
Operating Junction Temperature Range ............ 200 °c
Storage Temperature Range ............... -65 to +200 °c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Min Max Unit Conditions
BVCEO 40 Volts IC = 100,uA.IE = 0
BVCER 50 Volts IC = 100 mAo RBE = 10 ohms
BVCBO 60 Volts IC = 100,uA.IE = 0
BVEBO 5 Volts IE = 100,uA. IC = 0
ICEX 0.25 ,uA VCE 7" 60 Volts. VEB(off) = 1.5 Volts
IBL 0.25 ,uA VCE = 60Volts.VEB(off) = 1.5 Volts
hFE 25 IC = 150 mAo VCE = 2.5 Volts
hFE 50 250 IC = 150 mAo VCE = 10 Volts'
VCE(sat) 1.4 Volts IC = 150mA.IB = 15mA
VBE(sat) 1.7 Volts IC = 150mA.IB = 15mA
VBE(on) 1.7 Volts IC = 150 mAo VCE = 2.5 Volts
fT 100 MHz IC = 50 mAo VCE = 10 Volts. f = 20 MHz
Cob 15 pF VCB = 10 Volts. IE = O. f = 140 kHz
Cib 80 pF VBE = 0.5 Volt. IC = O. f = 100 kHz
. Pulse Test: Pulse Width = 300,u S. Duty Cycle = 2%
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