ITT - Index of

MPS3638,MPS3638A
PNP SILICON TRANSISTOR
Package: To-92
ABSOLUTE MAXIMUM RATINGS
Characteristics
Unit
Collector-Emitter Voltage ............................. 25 Vde
Collector-Emitter Voltage .............................. 25 Vde
Collector-Base Voltage ................................... 25 Vde
Emitter-Base Voltage .................................. 4.0 Vde
Collector Current ..................................... 500 mAde
Total Device Dissipation @T A = 250 C ........ 310 mW
Derate above 250 C ......................... 2.S1 mW/oC
Operating and Storage Junction
Temperature Range .................... -55 to +135 0c
Thermal Resistance, Junction
to Ambient ................................... 0.357 oC/mW
IS
Figure 1
"cc=.-rov
30.!l
"'out
To Sgmplmg Scope
Rise Time < I ns
lin ~IOOK
ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)
Symbol Min Max Unit Conditions
BVCEO * 25 - Vde I C = 10 mAde, I B = 0
BV CES 25 - Vde IC -100 uAde, V BE - 0
BV CBO 25 - Vde IC - 100uAde, IE - 0
BV EBO 4.0 - Vde IE - 100uAde, IC = 0
ICES
- 0.035 uAde VCE - 15 Vde, V BE = 0
2.0
VCE 15 Vde, V BE 0, T A - 650 C
IB - 0.035 uAde VCE - 15 Vde, V BE - 0
hFE * SO - - I C -1 mAde,V CE =10Vde MPS363SA
20 - IC 10 mAde, V CE - 10 V de MPS3638
V CE(sat)*
100 - MPS363SA
30 - IC = 50 mAde, V CE = 1 Vde MPS3638
100 - MPS363SA
·20 - IC = 300 mAde, V CE = 2 Vde MPS3638
20 - MPS3638A
- 0.25 Vde IC - 50 mAde, IB - 2.5 mAde
- 1.0 IC - 300 mAde, I B - 30 mAde
VBE (sat) * - 1.1 Vdeq IC - 50 mAde, I B - 2.5 mAde
O.SO 2.0 IC - 300 mAde, IB - 30 mAde
fT 100 - MHz V CE - 3 Vde, IC - 50 mAde, f MHz
MPS3638
150 - MPS363SA
Cob - 20 pF V CB - 10 Vde, IE - 0, f - 140 kHz
MPS3638
- 10 MPS363SA
9-16