ITT - Index of

ITT
2N2369A
SILICON SWITCHING TRANSISTOR
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SEMICONDUCTORS
HIGH SPEED NPN SILICON
SATURATED SWITCHING TRANSISTOR
• High IT: 675 MHz, typo
• High Gain: 40 mln.@ Ic = 10 mA
• Low Cob: 4 pI max. @ Vca = 5V
• Low ton: 9 nsec typ.;
• Low toll: 13 nsec typo
The ITT 2N2369A is a NPN silicon planar epitaxial
saturated switching transistor for applications at
current ranges from 0.1 to 100 mAo High gain and
narrow base region provide excellent radiation
resistance. The 2N2369A can operate at clock
rates above 10 MHz for commercial computer
applications.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
UNITS
Collector-to-Base Voltage................................. 40 Volts
Collector-to-Emitter Voltage (shorted base) .... 40 Volts
Collector-to-Emitter Voltage (open base)......... 15 Volts
Emitter-to-Base Voltage .................................... 4.5 Volts
Collector Current (continuous).......................... 200 mA
Collector Current (10 sec pulse) ...................... 500 mA
Junction Temperature (op. and stg.) .... -65 to +200 oC
Total Power Dissipation @ Tc = 25 uC .............. 1.2 Watts
(derate 6.8 mW/oC above 25~C)
@Tc= 100 0 C ............. 0.68
Total Power Dissipation @ T A = 25cC .............. 0.36
(derate 2.06 mW/oC above 25 oC)
Watts
Watts
ELECTRICAL CHARACTERISTICS @ T A = 25 0 C unless otherwise noted
Symbol Min. Typ. Max. Unit Conditions
hFE1 40 66 120 I c= 10mA, V CE= 1V
40 63 120 I c= 10mA, V CE= 0.35V
20 50 I c= 10mA, V CE= 0.35V,
T = -55oC
30 71 I c= 30mA, V CE= OAV
20 I c= 100mA. V CE= 1V
VCE (sat) 0.14 0.2 Vdc I c= 10mA, I B= 1mA
0.19 0.3 Vdc I c= 10mA, I B= 1mA,
T = 1250C
0.17 0.25 Vdc Ic= 30mA, I B= 3mA
0.28 0.5 Vdc I C= 100mA, I B= 10mA
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