ITT - Index of

I mm
_. .L.L .......__
G
SEMICONDUCTORS
ABSOLUTE MAXIMUM RATINGS@ 25 0 C (free air)
2N5378,2N5379
.... E_N_ER_A_L_PU_RP ... O_S .. E_P_N_P_S_I L_I_C_O_N_T_R_A_N_S_IS_T_O_R_S
Package: To-92
Emitter-base voltage .......................................... 5 V
Characteristics Unit Collector-base voltage ....................................... 40 V
Storage temperature range ................ -55 to +150 °c Collector-emitter voltage (Applicable
Operating Collector
from IC = 0 mA to IC = 10 mAl .................. 30 V
Junction Temperature .......................... +150 oC Collector current .............................. ......... 500 mA
Lead temperature 1/16" from case
Continuous device dissipation at or
10 seconds max .................................... +260 0c below 250 C free-air temperature ............ 360 mW
Linear derating factor above 250 C ...... 2.87 mW/oC
ELECTRICAL CHARACTERISTICS @ 250 C free air temperature
Symbol Min Max Unit
ICBO - 10 nA
BV CBO 40 V
BV EBO 5 V
BV CEO 30 V
hFE 100 500 -
40 200
hFE 120 600 -
100 500
hFE 150 - -
·120
V BE(sat)
0.65 0.80 V
V CE(sat)
0.2 V
h ib 20 32 Ohms
hob 0.06 0.5 umhos
h fe 120 1000
100 900 -
C cb - 10 pF
[hfeJ 20 100 -
NF 2.0 dB
Conditions
V CB .=30V,I E =0
I C -10uA,I E =0
'E-100nA,'C=0
'C - 10 mA, 'B - 0 (Note 1)
2N5378
2N5379
2N5378
2N5379
VCE =5V"C=10uA
VCE =5V"C=10uA
VCE-5V,'C-1mA
VCE = 5 V, 'C = 1 mA
2N5378 VCE = 5 V, IC = 10 mA (Note 1)
2N5379
'C=10mA"B=1mA
'C=10mA"B=1mA
'C - 1 mA, V CE = 5 V, f = 1 kHz
'C = 1 mA, V CE = 5 V, f = 1 kHz
2N5378 'C - 1 mA, V CE - 5 V, f - 1 kHz
2N5379
V CB = 10V, 'E =O,f= 1 Mhz (Note 2)
VCE = 5 V, 'C = 500uA, f = 10 MHz
2N5378 'C = 10uA, VCE = 5 V,
Rg = 10 K Ohms,
- 3.0 dB
2N5379
Bandwidth = 10 Hz to 15.7 kHz
NOTES: 1. Pulse: tPulse width = 300 usec, duty
cycle 5. 2%.
2. C b measurement employs a threetlrminal
capaCitance bridge incorporating
a guard circuit. The emitter terminal
shall be connected to the guard
terminal of the bridge.
9-116