ITT - Index of

ITT
2N2195, 2N2195A, 2N2195B®
HIGH-SPEED NPN SILICON
HIGH-CURRENT SWITCHING TRANSISTORS
- ---------......
SEMICONDUCTORS
ABSOLUTE MAXIMUM RATINGS (Note 1)
Package TO-5
Characteristics
Unit
Collector-Base Voltage ........................................ 45 Volts
Collector-Emitter Voltage (Note 4) .................... 25 Volts
Emitter-Base Voltage .......................................... 5.0 Volts
Collector Current ................................................... 1.0 Amp
Total Dissipation @:
TC = 25°C (Notes 2 and 3) ........................ 2.8 Watts
T C = 100° C (Notes 2 and 3) ...................... 1.6 Watts
T A = 25°C (Notes 2 and 3) .......................... 0.6 Watt
Storage Temperature ....................... -65°C to +300°C
Operating Junction Temperature ...... -65 to +200 °C
Lead Temperature
(Soldering. No Time Limit) ............... 300°C Maximum
NOTES:
(1) These ratings are limiting values above which the' serviceability
of any individual semiconductor device may be
impaired.
(2) These are steady state limits. The factory should be consulted
on applications involving pulsed or low duty cycle
operations.
(3) These ratings give a maximum junction temperature of
20DoC and junction-ta-case thermal resistance of
62.5°C/watt Iderating factor of 16 mW/oCI: junction-toambient
thermal resistance of 292°C/watt (derating factor
of 3.42 mW/oCI.
(4) Rating refers to a high-current point where collector-toemitter
voltage is lowest.
151 Pulse Conditions: length :$ 300 psec. duty cycle :$ 2%.
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol Min Max Unit Conditions
hFE 20 IC = 150 mAo VCE = 10 Volts
hFE 10 IC = 150 mAo VCE = 1.0 Volt
VCE(sat) 0.35 Volt IC = 150 mA.IB = 15 mA (2N2195)
VCE(sat) 0.25 Volt IC = 150mA.IB = 15mA(2N2195A
VCE(sat) 0.18 Volt IC = 150 mA.IB = 15 mA(2N2195B)
VBE(sat) 1.3 Volts I C = 150 mAo I B = 15 mA
hfe 2.5 IC = 50 mAo VCE = 10 Volts
Cob 20 pF IE = O. VCB = 10 Volts
ICBO 100 nA IE = O. VCB = 30 Volts
ICB O(150°C) 50 J.l.A IE = O. VCB = 30 Volts
lEBO 100 nA IC = O. VEB = 3.0 Volts
BVCBO 45 Volts IC = 100J.l.A.IE = 0
VCEO(sust) 25 Volts IC = 25 mA (pulsed). IS 0
(Notes 4 and 5)
BVEBO 5.0 Volts IE = 100 J.l.A. Ie = 0
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