ITT - Index of

ITT
MPS-A05
NPN SI LICON AUDIO TRANSISTORS
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SEMICONDUCTORS
NPN SILICON AUDIO TRANSISTORS
Package: To-92
ABSOLUTE MAXIMUM RATINGS
Characteristic
Unit
Collector-Emitter Voltage ........ 60 Vdc
Collector-Base Voltage ............. 60 Vdc
Emitter-Base Voltage .............. 4.0 Vdc
Collector Current - Co'ntinuous 500 MAde
Total Device Dissipation
@ T A = 25 0 C ..................... 500 mW
Derate above 250 C ............ 4.54
Total Device Dissipation
@ T C = 25 0 C ..................... 800 mW
Derate above 250 C ............ 7.27
Operating and Storage Junction
Temperature Range ............ -55 to +135
Thermal Resistance, Junction
to Case ............................... 0.137 °C/mW
Thermal Resistance, Junction
to Ambient .......................... 0.220 °C/mW
ELECTRICAL CHARACTERISTICS ITA = 250 C unless otherwise noted)
Symbol Min Typ Max Unit Conditions
BV CEO 60 - - Vdc IC = 1.0 mAde, IB = 0
•
BV EBO 4.0 - - Vdc IE = 100uAdc, IC = 0
ICBO
- - 100 nAdc V CB = 60 Vdc, IE 0
hFE 50 125 - - IC - 10 mAde, V CE- 1.0 Vdc
50 150 - IC = 100 mAde, VCE = 1.0 Vdc
- 90 - IC = 350 mAde, V CE = 1.0 Vdc
VCE(sat) - 0.08 0.25 Vdc IC = 100 mAde, IB - 10 mAde
VBE(sat) 0.75 IC - 100 mAde, IB 10 mAde
VBE(on) - 0.7 1.2 Vdc IC = 100 mAde, V CE = 1.0 Vdc
fT 50 200 - MHz IC = 100 mAde, V CE - 1.0 Vdc,
f = 100 MHz
Cob - 6.0 - pF V CB = 10 Vdc, IE = 0, f = 100 kHz
C ib 15 - pF V BE - 0.5 Vdc, IC - 0, f - 100 kHz
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