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Package: To-92<br />

2N5227<br />

GENERAL PURPOSE PNP SI LICON LOW-LEVEL AMPLIFIER TRANSISTOR<br />

ABSOLUTE MAXIMUM RATINGS<br />

Characteristic<br />

Unit<br />

Collector-Emitter Voltage ... ____ .__ ................ __ 30 Vdc<br />

Collector-Base Voltage ________________________________ 30 Vdc<br />

Emitter-Base Voltage ______________________ . __________ . 3.0 Vdc<br />

Collector Current ______________________________________ 50 mAde<br />

Total Device Dissipation @ T A = 250C ______ .310 mW<br />

Derate above 250C ________________________ 2.81 mW/oC<br />

Operating and Storage Junction<br />

Temperature Range ____________________ -55 to +135 0c<br />

Thermal Resistance, Junction<br />

to Ambient __________________________________ . 0.357 0C/mW<br />

ELECTRICAL CHARACTERISTICS (T A = 250C unless otherwise noted)<br />

Symbol Min Max Unit Conditions<br />

BV CEO 30 - Vdc IC = 1.0 mAde, I B = 0<br />

BV CBO 30 - Vdc IC -100uAdc, IE = 0<br />

BV EBO 3.0 - Vdc IE -100uAdc, IC - 0<br />

ICBO - 100 nAdc V CB -10Vdc,I E -0<br />

lEBO 500 nAdc V BE 2.0 Vdc, IC 0<br />

n FE 30 - - IC - 100uAdc, V CE'- 10 Vdc<br />

VCE(sat)<br />

50 700 IC - 2.0 mAde, V CE - 10 Vdc<br />

- 0.4 Vdc IC - 10 mAde, ~,- 1.0 mAde<br />

VBE(satl - 1.0 Vdc IC - 10 mAde, IB = 1.0 mAde<br />

fT 100 - MHz IC - 10 mAde, VCE - 10Vdc<br />

C cb - 5.0 pF V CB - 10 Vdc, IE-O<br />

h fe 50 1500 - IC - 2.0 mAde, V CE - 10 Vdc, f - 1.0 kHz<br />

9-111

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