ITT - Index of

2N5447,2N5448
Package: To-92
PNP SILICON AMPLIFIER TRANSISTORS
*ABSOLUTE MAXIMUM RATINGS at 250 C free-air temperat.ure (unless otherwise noted)
Characteristic 2N5447 2N5448 Unit
Collector-Base Voltage -40 -50 V
Collector-Emitter Voltage
(See Note 1) -25 -30
Emitter-Base Voltage -5-5
Continuous Collector Current 200
Continuous Device Dissipation at
(or below) 250 C Free-Air
Temperature (See Note 2)
Continuous Device Dissipation at
(or below) 250 C Lead
Temperature (See Note 3)
Storage Temperature Range
Junction Temperature-Operating
360
500
-65 to 150
260
V
V
mA
mW
mW
°C
°C
NOTES:
1. These values apply when the baseemitter
diode is open-circuited.
2. Derate linearly to lS00 C free-air temperature
at the rate of 2.88 mW/deg.
3. Derate linearly to 1500C lead tem­
. perature at the rate of 4 mW/deg. Lead
temperature is measured on the collector
lead 1/16 inch from the case.
SILICON 15-WATT QUASI-COMPLEMENTARY
POWER AMPLIFIER
2>0
"n "1_'OOPr, "':.,,,, 4."n
lMfl
II
ELECTRICAL CHARACTERISTICS at 250 C free-air temperature
2N5447
2N5448
Symbol Min Max Min Max Unit Test Conditions
V (BR)CBO -40 -50 V IC = -100 uA, ~ = 0
V(BR)CEO -25 -30 V IC- 10mA,IB~u,Seel\lote4
V(BR)EBO -5 -5 V 'E--l00uA,IC=0
'CBO 100 100 nA VCB -20V,IE -0
'EBO -100 -100 nA VEB 3 V, 'C 0
hFE 60 300 30 150 VCE --5V,IC --50mA,SeeNote4
V BE -06 -1 -0.6 -1 V VCE 5V,I C - 50mA,SeeNote4
7V~C~E~-------+-_--·--~-__ ===-_-_0_.2_5 __ ~ __;5------0-.-2-5-4--V____ ~71¥B------5~m~A~,~'~CL----~5~0~m-A~,S~e-e~N~ot~e~4~
[hfel I 5 VCE - -5 V, 'C = -50 mA, f - 20 MHz
rC'C~b--------+--------~+----------~1~2'-~P~F~-+-'VTC~B~='1~0'VT,7'~E~~~O-,'f~=~l'M~HLz------
I
~N~5
NOTES: 4. These parameters must be measured using pulse teDhniques. t = 300 us, duty cycle ~ 2%.
5. C Cb is measured using thfee-terminal measurement technique§lwith the emitter guarded.
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