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__ .<br />

<strong>ITT</strong><br />

FOUR-LAVER DIODE<br />

_____________________ **_A_PP_L_IC_A_T_IO __ N_N_O_T_E_S<br />

SEMICONDUCTORS<br />

TWENTY-FOUR CIRCUIT APPLICATIONS FOR <strong>ITT</strong> 4-LAYER DIODES<br />

THEORY OF OPERATION<br />

The <strong>ITT</strong> Semiconductor Four-Layer Diode is a<br />

two-terminal semiconductor switch, sometimes<br />

referred to as a negative-resistance diode.<br />

These PNPN silicon devices are useful in many<br />

applications including pulse generators, oscillators,<br />

telephone switching, sweep generators,<br />

and multivibrators.<br />

The diode has two stable states; the ON or<br />

low impedance state, and the OFF or high impedance<br />

state. To turn the device ON, voltage<br />

across the terminals must exceed the switching<br />

voltage (V,). The device can be turned OFF by<br />

reducing the current through the device below<br />

the holding current ((h).<br />

Ih<br />

Is<br />

I<br />

I<br />

I<br />

Vh<br />

Figure 1<br />

:m<br />

----I II<br />

I<br />

Vs<br />

Figure 1 is the V-I characteristic <strong>of</strong> a typical<br />

device. V, is the point at which the device<br />

breaks down and switches to the ON state<br />

where current is limited only by the external<br />

circuit impedance.<br />

Ih is the minimum current that must be passed<br />

through the diode to keep it in the ON state.<br />

If the current drops below this value the diode<br />

will switch to the 0 FF state.<br />

I<br />

Figure 2B<br />

IC2t<br />

I L,<br />

~I<br />

~<br />

I/32<br />

TI.<br />

t ICI<br />

The PNPN diode can be thought <strong>of</strong> as a<br />

complimentary pair <strong>of</strong> transistors, one a PNP<br />

and the other an NPN as shown in Figure 2A.<br />

Figure 2B shows the two transistors as they<br />

would appear schematically. The collector <strong>of</strong><br />

T2 drives the bose <strong>of</strong> T1 giving rise to a positive<br />

feedback loop with a gain <strong>of</strong> B1 B2. As long as<br />

B1 B2 is less than 1 the equivalent circuit is<br />

stable with the upper and lower PN junctions<br />

biased forward' and the middle junction reversed<br />

biased. In this condition only a small<br />

leakage current flows.<br />

The diode will remain in this condition until<br />

either the temperature or the anode voltage is<br />

increased to a point where B1 B2 = 1. At this<br />

point, the middle junction breaks down and<br />

the circuit becomes regenerative. This occurs<br />

because the collector <strong>of</strong> each transistor supplies<br />

current to the base <strong>of</strong> the complimentary<br />

transistor in the equivalent circuit and their<br />

Betas are current dependent. As sOOn as they<br />

reach unity the device effectively "runs away"<br />

or "fires" and the current through the circuit is<br />

limited only by external impedance.<br />

Vac<br />

Figure 3<br />

ANODE<br />

Figure 2A<br />

p<br />

p<br />

N N N<br />

p p p<br />

N<br />

N<br />

CATHODE<br />

**Application notes will be found in the last pages <strong>of</strong> this section.<br />

15-7

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