ITT - Index of

ITT
2N3011®
HIGH-SPEED NPN SILICON
SATURATED SWITCHING TRANSISTOR
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SEMICONDUCTORS Package: TO-1 8
The ITT 2N3011 is an NPN silicon planar eptiaxial transistor designed specifically for high-speed
saturated switching applications in the 50-100 mc range at current levels from 100 microamperes
to 100 milliamperes. It is suitable for most small-signal. RF. and digital type circuits.
ABSOLUTE MAXIMUM RATINGS (Note 1)
Characteristics
Unit
Collector-Base Voltage ........................................ 30 Volts
Collector-Emitter Voltage .................................... 30 Volts
Collector-Emitter Voltage (Note 4) .................... 12 Volts
Emitter-Base Voltage .......................................... 5.0 Volts
Total Device Dissipation @:
TC = 25°C (Notes 2 and 3) ........................ 1.2 Watts
T C = 1 oooe (Notes 2 and 3) ..................... 0.68 Watt
TA = 25°C (Notes 2 and 3) ....................... 0.36 Watt
Storage Temperature ...................... -65°C to +200 °C
Operating Junction Temperature ....... 200°C Maximum
Lead Temperature
(Soldering. 60 sec Time Limit) ......... 300 0 e Maximum
NOTES:
(1) These ratings are lim~ing values above which the servo
iceability of any individual semiconductor device may
be impaired.
(2) These are steady state limits. The factory should be consulted
on applications involving pulsed or low duty cycle
operations.
(3) These ratings give a maximum junction temperature of
200°C and iunction-to-case thermal resistance of
146°C/watt (derating factor of 6.85 mW/oC); iunctionto-ambient
thermal resistance of 486°C/watt (derating
factor of 2.06 mW/oC).
(4) Rating refers to a high-current point where collectorto-em~ter
voltage is lowest.
(5) Pulse Conditions: length = 300psec; duty cycle = 1%.
(6) See switching circuits for exact values of IC' 181' and
1 82 ,
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Min Typ Max Unit Conditions
hFE 30 70 120 IC = 10 rnA. VCE = 0.35 Volt (Note 5)
hFE 25 75 IC = 30 mAo VCE = 0.4 Volt (Note 5)
hFE 12 50 IC = 100 rnA. VCE = 1.0 Volt (Note 5)
VeE(sat) 0.17 0.2 Volt IC = 10 mA.IB = 1.0 mA
VeE(sat) 0.18 0.25 Volt IC = 30 rnA. IB = 3.0 mA
VeE(sat) 0.15 0.3 Volt Ic=10mA.18= 1.0mA
VCE(sat) 0.3 0.5 Volt Ie = 100 rnA.IB = 10 mA
VBE(sat) 0.72 0.8 0.87 Volt IC = 10 mA.IB = 1.0 mA
VBE(sat) 0.9 1.15 Volts IC = 30 mA.IB = 3.0mA
VBE(sat) 1.1 1.6 Volts IC = 100 mA.IB = 10 mA
hfe 4.0 6.5 IC = 20 rnA. VCE = 10 Volts
Cob 2.3 4.0 pf IE = O. VCB = 5.0 Volts
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