ITT - Index of

I mm
_ . -L-L ______
SEMICONDUCTORS
MPS3704, MPS3705, MPS3706
L_O_W_-P_O_W_E_R_N_PN ..... S_IL_IC_O_N_T_R_A_N_S_IS_T_O_R_S
NPN SILICON LOW-POWER TRANSISTORS
Package: To-92
Cha racter istics
Collector-Emitter Voltage ... 30 20 Vdc
Collector-Base Voltage ...... . 50 40 Vdc
Emitter-Base Voltage ......... . 5.0 Vdc
Collector Current - Continuous 600 mAde
Total Device Dissipation
@T A = 25 0 C ................. 310 mW
Derate above 250 C ......... 2.81 mW/oC
Operating and Storage Junction
Temperature Range ........ -55 to +135 °c
Thermal Resistanct, Junction
to Ambient ..................... 0.357 oC/mW
ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)
Symbol Min Max Unit Conditions
BVCEO * 30 - Vdc I C = 10 mAde, IE = 0 MPS3704
30 - MPS370b
20 - MPS3706
BV CBO 50 - Vdc IC = 100uAdc, IE = 0 MPS3704
50 - MPS3705
40 - MPS3706
BV EBO 5.0 - Vdc IE = 100 uAdc, IC = 0
ICBO
lEBO
- 100 nAdc V CB -20Vdc,I E =0
- 100 nAdc V BE = 3 Vdc, IC = 0
hFE * 100 300 - IC = 50 mAde, V CE = 2 Vdc MPS3704
50 150 MPS3705
VCE(sat)*
30 600 MPS3706
- 0.6 Vdc IC = 100 mAde, IB = 5mAdc MPS3704
- 0.8 MPS3705
- 1.0 MPS3706
VBE(on)*
0.5 1.0 Vdc IC - 100 mAde, V CE - 2 Vdc
fT 100 MHz IC 50 mAoc, VCE 2 Vdc, f 20MHz
Cob - 12 pF V CB - 10 Vdc, IE - 0, f - 1 MHz
*Pulse Test: Pulse Width = 300 us; Duty Cycle = 2%.
9-20