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<strong>ITT</strong><br />

<strong>ITT</strong>2001, <strong>ITT</strong>2002, <strong>ITT</strong>2003<br />

SILICON SWITCHING DIODE<br />

- -----<br />

SEMICONDUCTORS<br />

SILICON EPITAXIAL PLANAR<br />

SWITCHING DIODE<br />

For General Purpose High-Voltage Applications<br />

MAXIMUM' RATINGS @ 25°C (NOTE 1)<br />

<strong>ITT</strong>2001<br />

Peak Inverse Voltage ............. 100Volts<br />

Average Rectified Current ............ 150ma<br />

Forward Current Steady State D.C. .., 250ma<br />

Recurrent Peak Forward Current ..... 400ma<br />

Peak Forward Surge Current Pulse<br />

Width <strong>of</strong> 1.0 Second ............... 1.0A<br />

Power Dissipation ................. 300niw<br />

Power Derating ................. 3.3mw;oC<br />

Operating Temperature .. , -65°C to +175°C<br />

Storage Temperature,<br />

Ambient .............. -65°C to +200°C<br />

<strong>ITT</strong>2002<br />

200Volts<br />

150ma<br />

250ma<br />

4()Qma<br />

1.0A<br />

300mw<br />

3.3mw;oC<br />

-65°C to +175°C<br />

-65°C to +200°C<br />

<strong>ITT</strong>2003<br />

250Volts<br />

150ma<br />

250ma<br />

400ma<br />

1.0A<br />

300mw<br />

3.3mw;oC<br />

-65°C to +175°C<br />

-65°C to +200°C<br />

ELECTRICAL CHARACTERISTICS, <strong>ITT</strong>2001 (25°C unless otherwise noted)<br />

Parameter Min Max Units Test Conditions<br />

VF Forward Voltage 1.0 Volts IF=100ma<br />

IR1 Reverse Current 0.1 ua VR=50V<br />

IR. Reverse Current (150°C) 100 ua VR=50V<br />

BV Breakdown Voltage 100 Volts IR=100ua<br />

Os Store Charge (Note 2) 500 pc IF=10ma<br />

Co Capacitance 5.0 pf VR=OV, f=1MHz<br />

NOTES:<br />

1. The maximum ratings are limiting values<br />

above which life or satisfactory performance<br />

may be impaired.<br />

2. This test is equivalent to Trr @ IF = IR =<br />

30 rna, RL - 100 ohms, recovered to 3 rna to<br />

be .Iess t,han 50 nsec.<br />

11-12

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