ITT - Index of

2N2368, 2N2369
SILICON SWITCHING TRANSISTORS
ELECTRICAL CHARACTERISTICS @ 250C unless otherwise noted. (continued)
Symbol Min. Typ. Max.
ton 2 9.0 12
toft 2
10 15
13 18
Unit
nsec
nsec
nsec
Ic 10mA,
I B1 3mA
Ic 10mA,
I B1 3mA,
I B2 -1.5mA
2N2368
2N2369
Conditions
BVCBO 40
BVCES 40
VCEO (sust) 15
BVEBO 4.5
NOTES: 1. Pulse measurement: width 300 sec, dutY.cycle 2%.
2. Pulse switching circuits for exact IC, IB1, and IB2.
Vdc Ic= 10 A,IE= 0
Vdc I C= 10 A, I B= 0
Vdc Ic=10mA, I B= 0
Vdc I E= 10 A, Ic= 0
TYPICAL CHARACTERISTICS'
HIGH VOLTAGE COLLECTOR CHARACTERISTICS
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COLLECTOR VOLTAGE (VeE) VOLTS
HIGH VOLTAGE COLLECTOR CHARACTERISTICS
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COLLECTOR VOLTAGE (V CE ) VOLTS
--
SATURATION REGION COLLECTOR
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g: 100
t~ V
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CHARACTERISTICS
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COLLECTOR VOLTAGE WeE) VOLTS
SATURATION REGION COLLECTOR
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