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<strong>ITT</strong> . .. SILICON AMPLIFIER TRANSISTORS<br />

MPS-Al0<br />

GENERAL PURPOSE NPN<br />

- ------<br />

SEMICONDUCTORS<br />

NPN SILICON GENERAL PURPOSE<br />

AMPLIFIER TRANSISTORS<br />

Package: To-92<br />

ABSOLUTE MAXIMUM RATINGS<br />

Characteristic<br />

Unit<br />

Collector-Emitter Voltage ............................ 40 Vdc<br />

Emitter-Base Voltage ................................... 4.0 Vdc<br />

Collector Current - Continuous ............... 100 mAde<br />

Total Device Dissipation @ T A = 250 C ........ 300 mW<br />

Derate above 250 C .......................... 2.73 mW/oC<br />

Operating and Storage Junction<br />

Temperature Range ..................... -55 to +135 0c<br />

Thermal Resistance, Junction<br />

to Ambient ................................... 0.367 0C/mW<br />

ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise. noted)<br />

Symbol Min Max Unit Conditions<br />

BV CEO 40 - Vdc IC = 1.0 mAde, IB = 0<br />

BV EBO 4.0 - Vdc IE - 100 uAdc, IC = 0<br />

ICBO - 100 nAdc V CB =30Vdc,I E -0<br />

hFE 40 400 - IC - 5.0 mAde, V CE - 10 Vdc<br />

fT 50 - - MHz IC - 5.0 mAde, V CE = 10 Vdc, f - 20 MHz<br />

Cob - 4.0 pF V CB = 10 Vdc, IE - 0, f - 100 kHz<br />

Figure 1-Simplified AC Equivalent Circuit (Common Emitter!<br />

BASE 'b COLLECTOR<br />

(hfe+l)re<br />

9-4

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