ITT - Index of

ITT
2N2368,2N2369
SILICON SWITCHING TRANSISTORS
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SEMICONDUCTORS
HIGH SPEED NPN SILICON PLANAR
EPITAXIAL SATURATED
SWITCHING TRANSISTORS
• High fT: 650 mHz, typo
• High Gain: 40 min. @ Ic = 10mA .
• Low Cob: 4pf max. @ Vcs = 5V
• Low Ton = 9 nlee typo
• Low toff '" 13 nlee typo
The ITT 2N2368 and 2N2369 are NPN silicon
planar epitaxial saturated switching transistors for
applications at current ranges from 0.1 to 100 rnA.
High gain and narrow base region provide excellent
radiation resistance. They can operate at
clock rates above 10MHz for commercial computer
applications.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
UNITS
Collector-to-Base Voltage............................... 40 Volts
Collector-to-Emitter Voltage (shorted base).. 40 Volts
Collector-to-Emltter Voltage (open base)....... 15 Volts
Emitter-to-Base Voltage .................................. 4.5 Volts
Collector Current (10 sec. pulse) .................... 500 rnA
Junction Temperature (op. and stg.) ... -65 to +200 'C
Total Power Disslpation@ Tc ~ 25C ....•........ 1.2 Watts
(derate 6.6 mW/oC above 25 oC)
@ Te ~ 100-C .......... 0.66 Watts
Total Power Dissipation @ T A ~ 25cC ............ 0.36 Watts
(derate 2.06 mW/oC above 25 u C)
ELECTRICAL CHARACTERISTICS @ 250C unless otherwise noted.
hFE 1
Symbol Min. Typ. Max. Unit Conditions
I c= 10mA, V CE= 1V
20 60 2N2368
40 120 2N2369
I c= 10mA, V CE= 1V, T = -55-C
10 2N2368
20 2N2369
I G= 100mA, V CE= 2V
10 2N2368
20 2N2369
VCE (sat) 0.2 0.25 Vdc I c= 10mA, I B= 1mA
VBE (sat) 0.7 0.75 0.85 Vdc I c= 10mA, I B= 1mA
ICBO 0.1 0.4 A VCB= 20V, I E= 0
10 30 A V CB= 20V, I E= 0, T = 150-C
fr 650 MHz VCE= 10V,lc= 10mA
Cot> 2.5 4.0 pf VCB= 5V, I E= 0
s' Ic= I B1 10mA,10mA,
(charge storage I B2 -10mA-10mA
time) 10 nsec 2N2368
13 nsec 2N2369
9-46