ITT - Index of

ITT
ITT726
TEMPERATURE-CONTROLLED
DIFFERENTIAL PAIR
-- -----
SEMICONDUCTORS
TEMPERA lURE·
CONTROLLED
DIFFER-e-NT-IAl PAIR
Connection Diagram
E2
o Excellent Transistor Matching
o Close Thermal Coupling
o Fast Thermal Response
e Tight Temperature Control
ITT726 is a monolithic transistor pair in a high
thermal-resistance package, held at a constant
temperature by active temperature regulator
circuitry. The transistor pair displays the excellent
matching, close thermal coupling and fast
thermal response inherent in monolithic construction.
The high gain and low standby dissipation
of the regulator circuit permits tight
temperature control over a wide range of ambient
temperatures. It is intended for' use as
an input stage in very-low drift dc amplifiers,
replacing complex chopper-stabilized amplifiers;
it is also useful as the nonlinear element
in logarithmic amplifiers and multipliers where
the highly predictible exponential relation between
emitter-base voltage and collector curlent
matching, close thermal coupling and fast
a single silicon chip using the ITT Planar process.
ABSOLUTE MAXIMUM RATINGS
Characteristics
Units
Operating Temperature
Range ................ -55°C to +1250C
Storage Temperature
Range .................. -650 to +1500C
Lead Temperature
(Soldering 60 seconds) .............. 300°C
Supply Voltage ...................... ±18 V
Maximum Ratings For Each Transistor
Characteristics
Units
Maximum collector-to-substrate voltage .. 40 V
BVcBo .....................•........ 40 V
LVcEo [Note 1] ...................... 30 V
BVEBo ................................ 5 V
Collector Current .................... , 5 rnA
NOTE:
1. Measured at 1 rnA collector. current.
ELECTRICAL CHARACTERISTICS FOR ITT726-1
(-55°C:;;;;TA:;;;;+125°C, Vs=±15V, Radj=62kO unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Input Offset Voltage 1.0 2.5 mV 10Jl.A:;;;;1 c:;;;;100p.A
VcE =5V, Rs:;;;;500
Input Offset Current 10 50 nA Ic=10!'A, VcE=5V
Input Offset Current 50 200 nA Ic=100p.A, VcE =5V
Average Input Bias Current SO 1S0 nA .' Ic-10!'A, VcE -5V
Average Input Bias Current 250 500 nA Ic=100p.A, VCE=SV
Offset Voltage Change 0.3 6.0 mV Ic-10!,A, SV:;;;;VcE:;;;;2SV,
Rs:;;;;100kO
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