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ITT - Index of

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<strong>ITT</strong><br />

<strong>ITT</strong>600<br />

SILICON SWITCHING DIODE<br />

- -----<br />

SEMICONDUCTORS<br />

SILICON EPITAXIAL PLANAR<br />

SWITCHING DIODE<br />

ABSOLUTE MAXIMUM RATINGS<br />

Characteristics @ 25°C<br />

Units<br />

Peak Inverse Voltage .............. 75Volts<br />

Avg. Rect. Current ................. 200mA<br />

Recurrent Peak Fwd. Current ........ 900mA<br />

Surge Current, 1 sec ................ 1Amp<br />

Power Dissipation ................. 500mW<br />

Operating Temperature .... -65 to + 150°C<br />

Storage Temperature ....... -65 to +175°C<br />

ELECTRICAL CHARACTERISTICS<br />

@ 25°G unless otherwise noted.<br />

Symbol Min. Typ. Max. Unit Conditions<br />

VF .87 1.0 Vdc IF=200mA<br />

.82 .92 Vdc IF=100mA<br />

.76 .86 Vdc IF=50mA<br />

.66 .74 Vdc IF =10mA<br />

.54 .62 Vdc IF=1mA<br />

IR 100 nA VR=50V<br />

100 j1.A VR =50V, T=150°C'<br />

PIV 75 Vdc IR=5j1.A<br />

C 2.5 pF VR=OV<br />

Trr 4.0 nsec 1,,=IR=10 to 200mA<br />

Rec. to 0.1 <strong>of</strong> IF<br />

6.0 nsec IF=IR=200 to 400mA<br />

Rec. to 0.1 <strong>of</strong> IF<br />

11-10

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